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主变压器高压侧电流互感器抗短路电流性能验证
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作者 谌争鸣 李升健 +1 位作者 周宁 张妍 《江西电力》 2013年第1期69-71,共3页
在试验数据的基础上,采用"二次极限电动势法"和RTDS数字仿真,对TA短路倍数超标的220 kV变电站1号主变高压侧电流互感器抗短路电流性能进行评估。通过RTDS数字仿真计算分析,在1号主变高压侧短路时,TA暂态误差远超过误差规定值... 在试验数据的基础上,采用"二次极限电动势法"和RTDS数字仿真,对TA短路倍数超标的220 kV变电站1号主变高压侧电流互感器抗短路电流性能进行评估。通过RTDS数字仿真计算分析,在1号主变高压侧短路时,TA暂态误差远超过误差规定值10%。 展开更多
关键词 短路电流倍数 抗短路电流性能 二次极限电动势法 RTDS数字仿真
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主变高压侧电流互感器抗短路电流特性分析
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作者 周建生 《中国高新技术企业》 2015年第10期147-148,共2页
文章分析电流互感器的稳态特性,对互感器等值电路参数进行计算,建立互感器数学分析模型,依据模型,对互感器误差特性曲线进行分析和研究,提出额定二次极限电动势法,采取实测的拐点电压的方法对模型进行验算,并利用实时仿真系统对互感器... 文章分析电流互感器的稳态特性,对互感器等值电路参数进行计算,建立互感器数学分析模型,依据模型,对互感器误差特性曲线进行分析和研究,提出额定二次极限电动势法,采取实测的拐点电压的方法对模型进行验算,并利用实时仿真系统对互感器饱和程度进行数字仿真,仿真结果表明与理论分析相一致。 展开更多
关键词 主变高压侧 电流互感器 抗短路电流 等值电路参数 数学分析模型 实时仿真系统
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防止短路电流对电力变压器造成损坏的措施分析
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作者 李德海 刘生 +1 位作者 尚方 韩冰 《黑龙江电力》 CAS 2019年第5期377-381,402,共6页
变压器起着电能传输、分配及转换作用,是电网中的关键性设备。变压器的安全可靠运行是电力系统供电可靠性的重要保障。在电力系统中,经常会发生短路故障并产生短路电流冲击变压器的情况,短路电流引发的巨大应力可能造成变压器绕组变形... 变压器起着电能传输、分配及转换作用,是电网中的关键性设备。变压器的安全可靠运行是电力系统供电可靠性的重要保障。在电力系统中,经常会发生短路故障并产生短路电流冲击变压器的情况,短路电流引发的巨大应力可能造成变压器绕组变形甚至损坏。文章介绍了电力系统短路电流的产生原因,分析了短路电流对变压器造成损害的机理,并分析列举了现有标准、规程对变压器抗短路电流能力的技术要求。提出了两种方法用以提高变压器抗短路电流的能力、保障电网变压器的安全运行,一是采取措施防止和减少变压器出口短路故障的发生,二是对变压器低压侧短路继电保护跳闸时间进行合理整定。 展开更多
关键词 电力变压器 短路电流 抗短路电流能力 跳闸时间
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Optimization design and analysis of Si-^(63)Ni betavoltaic battery 被引量:11
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作者 TANG XiaoBin DING Ding +1 位作者 LIU YunPeng CHEN Da 《Science China(Technological Sciences)》 SCIE EI CAS 2012年第4期990-996,共7页
Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on... Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on. Based on the basic principle of the betavoltaic effect, the current paper adopted the Monte Carlo N-Particle code to simulate the transport processes of β particles in semiconductor materials and to establish the calculation formulas for nuclear radiation-generated current, open circuit voltage, and so on. By discussing the effect of minority carrier diffusion length, doping concentration, and junction depth on the property of batteries, the present work concluded that the best parameters for batteries are the use of silicon and the radioisotope Ni-63, i.e., Ni-63 with a mass thickness of 1 mg/cm2, Na=1×1019 cm-3, Nd=3.16×1016 cm-3, junction area of 1 cm2, junction depth of 0.3 μm, and so on. Under these parameters the short-circuit current, open circuit voltage, output power, and conversion efficiency are 573.3 nA, 0.253 V, 99.85 nW, and 4.94%, respectively. Such parameters are valuable for micro-power fields, such as micro-electromechanical systems and pacemakers, among others. 展开更多
关键词 betavoltaic semiconductor material radioisotope battery
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Optimization design of GaN betavoltaic microbattery 被引量:5
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作者 TANG XiaoBin LIU YunPeng +1 位作者 DING Ding CHEN Da 《Science China(Technological Sciences)》 SCIE EI CAS 2012年第3期659-664,共6页
Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high en... Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high energy density,strong anti-jamming capability,and so on.Based on the theory of semiconductor physics,the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm.In consideration of the isotope's self-absorption effect,the current paper studied and analyzed the optimization thickness of semiconductor and isotope source,junction depth,depletion region thickness,doping concentration,and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program MCNP.In the proposed design scheme,for a single decay,an average energy of 28.2 keV was deposited in the GaN,and the short circuit current density,open circuit voltage,and efficiency of a single device were 1.636 μA/cm2,3.16 V,and 13.4%,respectively. 展开更多
关键词 GAN SEMICONDUCTOR isotope battery
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