采用ADAMS的五自由度抛光机械手仿真分析

用机器人运动学的知识求出机械手的雅可比矩阵,用UG软件对五自由度抛光机械手进行三维实体建模,通过UG和ADAMS接口直接导入到ADAMS软件中,在此基础上进行五自由度抛光机械手的运动仿真分析,得到五自由度抛光机械手手腕关节的位移变化曲线,为机械手设计的改进和完善提供依据。

陶瓷抛光设备故障分析及排除

抛光砖生产过程中,抛光机械设备故障所造成的缺陷也是常见的缺陷之一。本文重点对抛光设备故障的特征及规律进行分析,通过检查、调整、维修排除抛光设备故障,控制或减少抛光缺陷产生。从而提高产品的产量和质量。

Stress-induced martensite phase transformation of FeMnSiCrNi shape memory alloy subjected to mechanical vibrating polishing

Fe66Mn15Si5Cr9Ni5(wt.%)shape memory alloy(SMA)withγaustenite andεmartensite was subjected to mechanical vibrating polishing and consequently its surface suffered from plastic deformation in the case of compressive stress.Almost completeεmartensite transformation is found to occur in FeMnSiCrNi sample subjected to mechanical vibrating polishing,where stress-induced martensite transformation plays a predominant role.Stressinduced martensite transformation of FeMnSiCrNi SMA is closely related to the orientation of external stress.The complicated compressive stress which results from the mechanical vibrating polishing contributes toεmartensite transformation fromγaustenite of FeMnSiCrNi SMA.Mechanical vibrating polishing has a certain influence on the surface texture ofεmartensite of FeMnSiCrNi SMA,where■<0001>texture appears in the polished FeMnSiCrNi SMA.

Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing

The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric acid(HEDP),and tribasic ammonium citrate(TAC)were investigated by electrochemical techniques,X-ray photoelectron spectrometer(XPS)analysis,nano-scratch tests,AFM measurements,and polishing of Cu-coated blanket wafers.The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions,especially at pH=8.The optimal electrolyte compositions(mass fraction)are 6% HEDP,0.3% TTA and 3% TAC at pH=8.The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential.The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion.The surface topography evolution before and after electrochemical polishing(ECP)illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution,that is,the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate.This understanding is beneficial for optimization of ECMP processes.

Scratching by pad asperities in copper electrochemical-mechanical polishing

Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data.

Probing particle removal in brush scrubber cleaning with fluorescence technique

Brush scrubber cleaning is widely used for post chemical mechanical polishing(CMP)cleaning in semiconductor manufacturing.In this study,an experimental system based on fluorescence technique and particle-tracking velocimetry(PTV)technique was employed to characterize the particle removal displacement and velocity in the interface between a transparent copper film and a porous polyvinyl alcohol(PVA)brush during the cleaning process.Several different cleaning conditions including rotation speeds,loading pressure and cleaning agent were examined and the particle removal rate was compared.Elastic and friction removal,hydrodynamic removal and mixed-type removal are the three types of particle removal.Particles with an arc trace and uniform velocity curves were removed by friction and elastic force which were related to the brush load.Particles with a random trace and fluctuant velocity curves were removed by hydrodynamic force which was determined by the brush rotation speed.The increase of particle removal rate(PRR)with brush rotation speed is a logistic function.It is easier to improve PRR by increasing the brush load or by adding surfactant than by increasing the brush rotation speed.

Contact stress non-uniformity of wafer surface for multi-zone chemical mechanical polishing process

A finite element analysis(FEA)model is developed for the chemical-mechanical polishing(CMP)process on the basis of a 12-in five-zone polishing head.The proposed FEA model shows that the contact stress non-uniformity is less dependent on the material property of the membrane and the geometry of the retaining ring.The larger the elastic modulus of the pad,the larger contact stress non-uniformity of the wafer.The applied loads on retaining ring and zone of the polishing head significantly affect the contact stress distribution.The stress adjustment ability of a zone depends on its position.In particular,the inner-side zone has a high stress adjustment ability,whereas the outer-side zone has a low stress adjustment ability.The predicted results by the model are shown to be consistent with the experimental data.Analysis results have revealed some insights regarding the performance of the multi-zone CMP.

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

The chemical mechanical polishing(CMP)technology has been widely used for surface modification of critical materials and components with high quality and efficiency.In a typical CMP process,the mechanical properties of abrasives play a vital role in obtaining the ultra-precision and damage-free surface of wafers for improvement of their performances.In this work,a series of fine structured rod-shaped silica(RmSiO2)-based abrasives with controllable sizes and diverse ordered mesoporous structures were synthesized via a soft template approach,and successfully applied in the sustainable polishing slurry for improving the surface quality of cadmium zinc telluride(CZT)wafers.Compared with commercial silica gel,solid and mesoporous silica spheres,the RmSiO2 abrasives present superior elastic deformation capacity and surface precision machinability on account of their mesoporous structures and rod shapes.Especially,ultra-precision surface roughness and relatively effective material removal speed were achieved by the CMP process using the RmSiO2 abrasives with a length/diameter(L/d)ratio of 1.In addition,a potential CMP mechanism of the developed polishing slurry to CZT wafer was elucidated by analyzing X-ray photoelectron spectra and other characterizations.The proposed interfacial chemical and mechanical effects will provide a new strategy for improving abrasives’machinability and precision manufacture of hard-to-machine materials.

Surface and internal magnetic domain structures of Fe-Ga alloy rods

The magnetic domain structures of the 100 oriented Fe 81 Ga 19 polycrystalline alloys with rapid quenching(RQ) and post-annealing(PA) thermal treatments are investigated by using magnetic force microscopy(MFM).The surfaces of the RQ alloy rods take on the dendritic domains after undergoing a standard mechanical polishing.While after PA processing,the distinct domain structures are observed at different temperatures.The wide stripe-like domain patterns appear in the surface of those PA rods at 550°C while the ramous domains remain at 400°C annealing.X-ray diffraction patterns indicate that a thin iron layer is formed on the surface of the specimens annealed at higher temperature.The soft magnetic iron layer,actually acting as a shield for the stray fields emerging from the internal magnetic structures underneath,brings about the presentation of the wide internal domains.