High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than...High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...展开更多
We have synthesized single crystals of CeZnAl3, which is a new member of family of Ce-based intermetallics CeTX3 （T=transition metal, X=Si, Ge, A1）, crystallizing in the non-centrosymmetric tetragonal BaNiSns-type s...We have synthesized single crystals of CeZnAl3, which is a new member of family of Ce-based intermetallics CeTX3 （T=transition metal, X=Si, Ge, A1）, crystallizing in the non-centrosymmetric tetragonal BaNiSns-type structure. Magnetization, specific heat and resistivity measurements all show that CeZnAls orders magnetically below around 4.4 K. Furthermore, magnetization measurements exhibit a hysteresis loop at low temperatures and fields, indicating the presence of a ferromagnetic component in the magnetic state. This points to a different nature of the magnetism in CeZnAl3 compared to the other isostructural CeTAl3 compounds. Resistivity measurements under pressures up to 1.8 GPa show a moderate suppression of the ordering temperature with pressure, suggesting that measurements to higher pressures are required to look for quantum critical behavior.展开更多
基金Supported by Science and Technology Committee of Tianjin (No.06YFGPGX08400)Ministry of Science and Technology of China (No.2009GJF20022)Innovation Fund of Tianjin University
文摘High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...
基金supported by the Science Challenge Project of China(Grant No.TZ2016004)the National Natural Science Foundation of China(Grant Nos.11474251,11604291,and U1632275)the National Key R&D Program of China(Grant Nos.2017YFA0303100,and 2016YFA0300202)
文摘We have synthesized single crystals of CeZnAl3, which is a new member of family of Ce-based intermetallics CeTX3 （T=transition metal, X=Si, Ge, A1）, crystallizing in the non-centrosymmetric tetragonal BaNiSns-type structure. Magnetization, specific heat and resistivity measurements all show that CeZnAls orders magnetically below around 4.4 K. Furthermore, magnetization measurements exhibit a hysteresis loop at low temperatures and fields, indicating the presence of a ferromagnetic component in the magnetic state. This points to a different nature of the magnetism in CeZnAl3 compared to the other isostructural CeTAl3 compounds. Resistivity measurements under pressures up to 1.8 GPa show a moderate suppression of the ordering temperature with pressure, suggesting that measurements to higher pressures are required to look for quantum critical behavior.
