The carrier mobility of Si material can be enhanced under strain,and the stress magnitude can be measured by the Raman spectrum.In this paper,we aim to study the penetration depths into biaxially-strained Si materials...The carrier mobility of Si material can be enhanced under strain,and the stress magnitude can be measured by the Raman spectrum.In this paper,we aim to study the penetration depths into biaxially-strained Si materials at various Raman excitation wavelengths and the stress model corresponding to Raman spectrum in biaxially-strained Si.The experimental results show that it is best to use 325 nm excitation to measure the material stress in the top strained Si layer,and that one must pay attention to the distortion of the buffer layers on measuring results while 514 nm excitation is also measurable.Moreover,we established the stress model for Raman spectrum of biaxially-strained Si based on the Secular equation.One can obtain the stress magnitude in biaxially-strained Si by the model,as long as the results of the Raman spectrum are given.Our quantitative results can provide valuable references for stress analysis on strained materials.展开更多
From the point of growth units, the growth mechanism of hydrotalcite (HT) crystal is investigated in this paper. Results show that the growth morphology of HT is consistent with the model of anion coordination polyhed...From the point of growth units, the growth mechanism of hydrotalcite (HT) crystal is investigated in this paper. Results show that the growth morphology of HT is consistent with the model of anion coordination polyhedron growth units. The Raman shift of growth solutions of HT, Cu-HTlc, and Cu-Zn-HTlc are monitored using Raman spectroscopy. In the experiment, the growth units of Mg-Al-hydrotalcite are [Mg-(OH)6]4- and [Al-(OH)6]3-, and the growth units of Cu-Htlc and Cu-Zn-HTlc are [Mg-(OH)6]4- and [Al-(OH)6]3-, respectively. The growth process of hydrotalcite is as follows: growth units first incorpo- rate into metal layers, then metal layers adsorb An- and H2O, and the growth units incorporate into layer compounds according to this rule. Growth units will have different incorporations and growth morphologies caused by different growth surroundings. Furthermore, the reason why Cu-HTlc is difficult to synthesize is also interpreted in this paper.展开更多
基金supported by the Research Fund for the Doctoral Program of Higher Education of China(Grant No.JY0300122503)the NLAIC Research Fund(Grant No.P140c090303110c0904)
文摘The carrier mobility of Si material can be enhanced under strain,and the stress magnitude can be measured by the Raman spectrum.In this paper,we aim to study the penetration depths into biaxially-strained Si materials at various Raman excitation wavelengths and the stress model corresponding to Raman spectrum in biaxially-strained Si.The experimental results show that it is best to use 325 nm excitation to measure the material stress in the top strained Si layer,and that one must pay attention to the distortion of the buffer layers on measuring results while 514 nm excitation is also measurable.Moreover,we established the stress model for Raman spectrum of biaxially-strained Si based on the Secular equation.One can obtain the stress magnitude in biaxially-strained Si by the model,as long as the results of the Raman spectrum are given.Our quantitative results can provide valuable references for stress analysis on strained materials.
基金supported by the National Natural Science Foundation of China (Grant Nos.40776071,40976074)
文摘From the point of growth units, the growth mechanism of hydrotalcite (HT) crystal is investigated in this paper. Results show that the growth morphology of HT is consistent with the model of anion coordination polyhedron growth units. The Raman shift of growth solutions of HT, Cu-HTlc, and Cu-Zn-HTlc are monitored using Raman spectroscopy. In the experiment, the growth units of Mg-Al-hydrotalcite are [Mg-(OH)6]4- and [Al-(OH)6]3-, and the growth units of Cu-Htlc and Cu-Zn-HTlc are [Mg-(OH)6]4- and [Al-(OH)6]3-, respectively. The growth process of hydrotalcite is as follows: growth units first incorpo- rate into metal layers, then metal layers adsorb An- and H2O, and the growth units incorporate into layer compounds according to this rule. Growth units will have different incorporations and growth morphologies caused by different growth surroundings. Furthermore, the reason why Cu-HTlc is difficult to synthesize is also interpreted in this paper.
