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双侧面胶轮式拉膜机构的研究与设计
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作者 郝喜海 吴吉平 姚齐水 《包装工程》 CAS CSCD 北大核心 2002年第3期58-59,70,共3页
研究设计了一种全自动包装机的新型拉膜机构 ,该新型拉膜机构结构简单、轻巧、运行平稳 ,易于调节 ,拉膜力大、安装控制与运行成本低。
关键词 双侧面胶轮式机构 设计 全自动包装机 机构 拉膜力
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Role of tensile forces in hot tearing formation of cast Al-Si alloy 被引量:4
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作者 许荣福 郑洪亮 +3 位作者 罗杰 丁苏沛 张三平 田学雷 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2014年第7期2203-2207,共5页
The instrumented applied rod casting apparatus (ARCA) was developed to investigate the effects of tensile forces in the hot tearing formation of cast AI-Si alloys. The obtained data of tensile forces/temperature was... The instrumented applied rod casting apparatus (ARCA) was developed to investigate the effects of tensile forces in the hot tearing formation of cast AI-Si alloys. The obtained data of tensile forces/temperature was used to identify hot tearing initiation and propagation and the fracture surface of samples was also investigated. The result shows that the applied tensile forces have a complex effect on load onset for the hot tearing initiation and propagation. During the casting solidification, the tensile forces are gradually increased with the increase of solid fraction. Under the action of tensile forces, there will appear hot tearing and crack propagation on the surface of the sample. When the tensile forces exceed the inherent strength of alloys, there will be fractures on the sample. As for the A356 alloy, the critical fracture stress is about 0.1 MPa. The hot tearing surface morphology shows that the remaining intergranular bridge and liquid films are thick enough to allow the formation of dendrite-tip bumps on the fracture surface. 展开更多
关键词 hot tearing tensile force A356 alloy aluminum alloy liquid film solid fraction
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RF MEMS Switch on Poly-Silicon Substrate
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作者 张正元 温志渝 +4 位作者 徐世六 张正番 刘玉奎 李开成 黄尚廉 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第8期798-802,共5页
The improvements of the design and the compatibility with silicon IC of RF MEMS switch are presented.The compatibility with silicon IC is realized by dielectric isolation technology,and the decrease of the pull voltag... The improvements of the design and the compatibility with silicon IC of RF MEMS switch are presented.The compatibility with silicon IC is realized by dielectric isolation technology,and the decrease of the pull voltage of the switch is done by etching some holes on the metal membrane.The preliminary test results are as follows: C off and C on are 0 32pF,6pF,respectively;the pull down voltage is about 25V.The package of the RF MEMS switch is done by micro stripline,and the isolation and the insertion loss are 35dB,2dB,respectively at 1 5GHz;the switching speed is about 3μs by oscilloscope. 展开更多
关键词 RF MEMS switch pull down voltage electrostatic force metal membrane
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Structure and magneto-electrical properties of Fe-C films prepared by magnetron sputtering 被引量:3
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作者 MA Lei LIU ZhongWu +3 位作者 ZENG DeChang YU HongYa ZHONG XiaPing ZHANG XiaoZhong 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第9期1594-1598,共5页
Fe-doped amorphous FexCl~ granular films were prepared on n-Si (100) substrates by d.c. magnetron sputtering. The structur- al properties of FexC1-x films were investigated by X-ray diffraction (XRD), atomic force... Fe-doped amorphous FexCl~ granular films were prepared on n-Si (100) substrates by d.c. magnetron sputtering. The structur- al properties of FexC1-x films were investigated by X-ray diffraction (XRD), atomic force microscope (AFM) and Raman spec- troscopy. The results show that the iron and carbon of as-deposited films are in amorphous state, and the FexC1-x films are di- amond-like carbon (DLC) films. After doping iron into the DLC films, a smooth surface morphology of the FexC1-x films has been obtained with the surface roughness Ra of about 0.231 nm for x=18at%. The FexC1-x films have good soft magnetic prop- erties with the coercivity of approximately 20 Oe. A high positive magnetoresistance (MR) up to 93% with x=lat% was ob- served in a FexCl-x granular film at 300 K. The resistance characteristic of Fe-C films is changed at about 230 K and the positive MR effect can be understood by the p-n heterojunction theory. 展开更多
关键词 carbon films Fe-doped DLC films MAGNETORESISTANCE magnetron sputtering
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