Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decompos...Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.展开更多
An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （P...An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （PCBM）/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.展开更多
The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light ou...The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional Al Ga N counterparts.Based on numerical simulation and analysis,the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current,which increases the concentration of carriers in the quantum well(QW) when the thin Al In N layer is used.展开更多
文摘Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.
基金supported by the National Natural Science Foundation of China (Nos.60876046 and 60976048)the Key Project of Education Ministry of (No.209007)+2 种基金the Tianjin Natural Science Council (No.0ZCKFGX01900)the Scientific Developing Foundation of Tianjin Education Commission (No.20100723)the Tianjin Key Discipline of Material Physics and Chemistry
文摘An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （PCBM）/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.
基金supported by the Key Scientific Research Project of Higher Education of Henan Province(No.15A510033)
文摘The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional Al Ga N counterparts.Based on numerical simulation and analysis,the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current,which increases the concentration of carriers in the quantum well(QW) when the thin Al In N layer is used.
