低噪声微波频率综合器在现代电子系统和高性能测试系统中起着非常重要的作用,其实现方式通常以压控振荡器(VCO)和YIG调谐振荡器锁相频率合成为主。基于4~9 GHz YIG调谐振荡器,通过VCO合成小步进可变参考,使锁相环路在不降低鉴相频率的...低噪声微波频率综合器在现代电子系统和高性能测试系统中起着非常重要的作用,其实现方式通常以压控振荡器(VCO)和YIG调谐振荡器锁相频率合成为主。基于4~9 GHz YIG调谐振荡器,通过VCO合成小步进可变参考,使锁相环路在不降低鉴相频率的前提下,设计了完成高分辨率、低杂散的宽带低噪声YIG频率综合器。技术验证样品测试结果表明,在4~9 GHz工作带宽内频率步进为1 k Hz,相位噪声优于-95d Bc@10 k Hz,-115 d Bc@100 k Hz,其软硬件设计支持连续扫频和合成扫频功能,工作性能稳定可靠,可满足工程中本振和信号源应用需求。展开更多
An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation tech...An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation technique,the frequency tuning curves agree well with the experiment.At a 3.3V supply,the LC-VCO measures a phase noise of -82.2dBc/Hz at a 10kHz frequency offset while dissipating 3.1mA current.The chip size is 0.86mm×0.82mm.展开更多
This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices ...This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.展开更多
文摘低噪声微波频率综合器在现代电子系统和高性能测试系统中起着非常重要的作用,其实现方式通常以压控振荡器(VCO)和YIG调谐振荡器锁相频率合成为主。基于4~9 GHz YIG调谐振荡器,通过VCO合成小步进可变参考,使锁相环路在不降低鉴相频率的前提下,设计了完成高分辨率、低杂散的宽带低噪声YIG频率综合器。技术验证样品测试结果表明,在4~9 GHz工作带宽内频率步进为1 k Hz,相位噪声优于-95d Bc@10 k Hz,-115 d Bc@100 k Hz,其软硬件设计支持连续扫频和合成扫频功能,工作性能稳定可靠,可满足工程中本振和信号源应用需求。
文摘An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation technique,the frequency tuning curves agree well with the experiment.At a 3.3V supply,the LC-VCO measures a phase noise of -82.2dBc/Hz at a 10kHz frequency offset while dissipating 3.1mA current.The chip size is 0.86mm×0.82mm.
基金supported in part by the National Natural Science Foundation of China under Grant 61331003 and Grant 61222405
文摘This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.
