A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system....A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.展开更多
Luquire et al. ' s impedance change model of a rectangular cross section probe coil above a structure with an arbitrary number of parallel layers was used to study the principle of measuring thicknesses of multi-l...Luquire et al. ' s impedance change model of a rectangular cross section probe coil above a structure with an arbitrary number of parallel layers was used to study the principle of measuring thicknesses of multi-layered structures in terms of eddy current testing voltage measurements. An experimental system for multi-layered thickness measurement was developed and several fitting models to formulate the relationships between detected impedance/voltage measurements and thickness are put forward using least square method. The determination of multi-layered thicknesses was investigated after inversing the voltage outputs of the detecting system. The best fitting and inversion models are presented.展开更多
The ratio measurement by means of the sensing optical fiber and the reference fiber with different beginning positions, and the technique to improve the stability of the sensor are first described. Then the ability to...The ratio measurement by means of the sensing optical fiber and the reference fiber with different beginning positions, and the technique to improve the stability of the sensor are first described. Then the ability to restrain and compensate the interference of the same nature through the double channel ratio measurement is illustrated. Finally, the performance of sensor and its engineering design are discussed.展开更多
A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock reco...A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock recovery method based on filter,and implements monolithic clock-recovery IC.The designed circuits include phase detector,voltage-controlled oscillator and loop filter.Among them,the voltage-control oscillator is a modified two-stage ring oscillator,which provides quadrature clock signals and presents wide voltage-controlled range and high voltage-controlling sensitivity.展开更多
Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adju...Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW^-1. The detectivity of 2D GaTe devices is -10^12 Jones, which surpasses that of currently-exploited InGaAs photodetectors （10^11-10^12 Jones）. To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.展开更多
Au-MgO-ZnO （AMZ） ultraviolet （UV） photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors...Au-MgO-ZnO （AMZ） ultraviolet （UV） photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors were improved via the reduction of the dark current. Furthermore, strain modulation was used to enhance the sensitivities of the AMZ UV photodetectors. The sensitivities of the photodetectors were enhanced by the piezo-phototronic effect. However, there was a limiting value of the applied strains to enhance the sensitivity of the photodetector. When the external strains exceeded the limiting value, the sensitivity decreased because of the tunneling dark current. The external strains loaded on the photodetectors result in the degradation of the photodetectors, and an applied bias can accelerate the process. This work presents a prospective approach to engineer the performance of a UV photodetector. In addition, the study on the service behavior of the photodetectors may offer a strain range and theoretical support for safely using and studying metal-insulator-semiconductor （MIS） UV photodetectors.展开更多
Visible and near-infrared(NIR)light dual-band photodetectors(PDs)have potential applications in signal detection,bioimaging,optical communications and safety monitoring.Herein,we report an ultrafast perovskite/organic...Visible and near-infrared(NIR)light dual-band photodetectors(PDs)have potential applications in signal detection,bioimaging,optical communications and safety monitoring.Herein,we report an ultrafast perovskite/organic heterojunction dual-mode PD with a voltage-modulated photoresponse range in visible and NIR spectra.The PD,comprising a perovskite layer to absorb visible light(500–810 nm)and an organic bulk heterojunction layer for NIR light absorption(810–950 nm),exhibited a switchable spectral response in the visible or NIR bands.The voltage-modulated visible and NIR photoresponses of the PD were attributable to controlled charge photogeneration in perovskite and organic blend thin films under different bias polarities.The device exhibited peak responsivities of 93.5 and 102.2 mA/W in the visible and NIR bands,respectively;a high detectivity of 4.3×10^(9) Jones(at forward bias of 0.7 V and incident 625 nm light)and 1.6×10^(12) Jones(at reverse bias of–1.5 V and incident 900 nm light);a fast microsecond response time;and a wide dynamic range(>120 dB)both in the visible mode and NIR mode.Also,this voltage-modulated dual-band PD shows promising applications in visible light and NIR imaging,which is proven by demonstrating a PD array with 25 pixels(5×5).展开更多
A new kind of photodetector based on a double-walled carbon nanotube （DWCNT） film and a TiO2 nanotube array with hetrodimensional non-ohmic contacts has been fabricated. Due to the dimensionality difference effect, ...A new kind of photodetector based on a double-walled carbon nanotube （DWCNT） film and a TiO2 nanotube array with hetrodimensional non-ohmic contacts has been fabricated. Due to the dimensionality difference effect, the DWCNT film/TiO2 nanotube array photodetector exhibits a much higher photocurrent-to-dark current ratio and photoresponse relative to an Au film/TiO2 nanotube array device, even at small bias voltage. The photocurrent-to-dark current ratio reached four orders of magnitude and a high photoresponse of 2467 A/W was found upon irradiation at 340 nm. Furthermore, the photosensitive regions could be extended into the visible range. The photocurrent-to-dark current ratio reached approximately three orders of magnitude upon irradiation at 532 nm, where the photon energy is much lower than the band gap of TiO2.展开更多
In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct ...In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct current(DC) bias voltage compensation, the single-photon detector can work stably in Geiger mode from-40 °C to 35 °C with an almost constant avalanche gain. It provides a solution for single-photon detection at outdoor operation in all-weather conditions.展开更多
文摘A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.
文摘Luquire et al. ' s impedance change model of a rectangular cross section probe coil above a structure with an arbitrary number of parallel layers was used to study the principle of measuring thicknesses of multi-layered structures in terms of eddy current testing voltage measurements. An experimental system for multi-layered thickness measurement was developed and several fitting models to formulate the relationships between detected impedance/voltage measurements and thickness are put forward using least square method. The determination of multi-layered thicknesses was investigated after inversing the voltage outputs of the detecting system. The best fitting and inversion models are presented.
文摘The ratio measurement by means of the sensing optical fiber and the reference fiber with different beginning positions, and the technique to improve the stability of the sensor are first described. Then the ability to restrain and compensate the interference of the same nature through the double channel ratio measurement is illustrated. Finally, the performance of sensor and its engineering design are discussed.
文摘A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock recovery method based on filter,and implements monolithic clock-recovery IC.The designed circuits include phase detector,voltage-controlled oscillator and loop filter.Among them,the voltage-control oscillator is a modified two-stage ring oscillator,which provides quadrature clock signals and presents wide voltage-controlled range and high voltage-controlling sensitivity.
文摘Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW^-1. The detectivity of 2D GaTe devices is -10^12 Jones, which surpasses that of currently-exploited InGaAs photodetectors （10^11-10^12 Jones）. To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.
文摘Au-MgO-ZnO （AMZ） ultraviolet （UV） photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors were improved via the reduction of the dark current. Furthermore, strain modulation was used to enhance the sensitivities of the AMZ UV photodetectors. The sensitivities of the photodetectors were enhanced by the piezo-phototronic effect. However, there was a limiting value of the applied strains to enhance the sensitivity of the photodetector. When the external strains exceeded the limiting value, the sensitivity decreased because of the tunneling dark current. The external strains loaded on the photodetectors result in the degradation of the photodetectors, and an applied bias can accelerate the process. This work presents a prospective approach to engineer the performance of a UV photodetector. In addition, the study on the service behavior of the photodetectors may offer a strain range and theoretical support for safely using and studying metal-insulator-semiconductor （MIS） UV photodetectors.
基金supported by the National Natural Science Foundation of China(52027817 and 03012800001)Shenzhen Science and Technology Innovation Committee(JCYJ20200109144614514)+1 种基金the support from the Hong Kong Research Grant Council for the GRF grant(11314122)the Guangdong Major Project of Basic and Applied Basic Research(2019B030302007)。
文摘Visible and near-infrared(NIR)light dual-band photodetectors(PDs)have potential applications in signal detection,bioimaging,optical communications and safety monitoring.Herein,we report an ultrafast perovskite/organic heterojunction dual-mode PD with a voltage-modulated photoresponse range in visible and NIR spectra.The PD,comprising a perovskite layer to absorb visible light(500–810 nm)and an organic bulk heterojunction layer for NIR light absorption(810–950 nm),exhibited a switchable spectral response in the visible or NIR bands.The voltage-modulated visible and NIR photoresponses of the PD were attributable to controlled charge photogeneration in perovskite and organic blend thin films under different bias polarities.The device exhibited peak responsivities of 93.5 and 102.2 mA/W in the visible and NIR bands,respectively;a high detectivity of 4.3×10^(9) Jones(at forward bias of 0.7 V and incident 625 nm light)and 1.6×10^(12) Jones(at reverse bias of–1.5 V and incident 900 nm light);a fast microsecond response time;and a wide dynamic range(>120 dB)both in the visible mode and NIR mode.Also,this voltage-modulated dual-band PD shows promising applications in visible light and NIR imaging,which is proven by demonstrating a PD array with 25 pixels(5×5).
基金This work was financially supported by National Natural Science Foundation of China （NSFC） （Grants No. 10774085 and No. 10774016）.
文摘A new kind of photodetector based on a double-walled carbon nanotube （DWCNT） film and a TiO2 nanotube array with hetrodimensional non-ohmic contacts has been fabricated. Due to the dimensionality difference effect, the DWCNT film/TiO2 nanotube array photodetector exhibits a much higher photocurrent-to-dark current ratio and photoresponse relative to an Au film/TiO2 nanotube array device, even at small bias voltage. The photocurrent-to-dark current ratio reached four orders of magnitude and a high photoresponse of 2467 A/W was found upon irradiation at 340 nm. Furthermore, the photosensitive regions could be extended into the visible range. The photocurrent-to-dark current ratio reached approximately three orders of magnitude upon irradiation at 532 nm, where the photon energy is much lower than the band gap of TiO2.
基金supported by the National Natural Science Foundation of China(No.11374105)
文摘In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct current(DC) bias voltage compensation, the single-photon detector can work stably in Geiger mode from-40 °C to 35 °C with an almost constant avalanche gain. It provides a solution for single-photon detection at outdoor operation in all-weather conditions.
