In this article,we report the first experimental demonstration of the three-phase-shifted(3PS)DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp(REC)technique.The simulati...In this article,we report the first experimental demonstration of the three-phase-shifted(3PS)DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp(REC)technique.The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser.Compared with the quarter-wave-phase shift(QWS)DFB semiconductor laser,the 3PS DFB semiconductor laser shows better single-longitude-mode(SLM)property even at high injection current with high temperature.However,it only changes theμm-level sampling structures but the seed grating is uniform using the REC technique.Therefore,its fabrication cost is low.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61090392)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300)the Key Programs of the Ministry of Education of China(Grant No.20100091110005)
文摘In this article,we report the first experimental demonstration of the three-phase-shifted(3PS)DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp(REC)technique.The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser.Compared with the quarter-wave-phase shift(QWS)DFB semiconductor laser,the 3PS DFB semiconductor laser shows better single-longitude-mode(SLM)property even at high injection current with high temperature.However,it only changes theμm-level sampling structures but the seed grating is uniform using the REC technique.Therefore,its fabrication cost is low.
