A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 1...A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.展开更多
In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. Th...In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.展开更多
文摘A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.
基金supported by the National Natural Science Foundation of China(Grant No.61090392)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300)the Key Programs of the Ministry of Education of China(Grant No.20100091110005)
文摘In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.
