高效背结异质结太阳电池硼掺杂非晶硅发射极研究

晶硅/非晶硅异质结(HJT)太阳电池由于具有高开压、高转换效率和低温度系数等优点而备受关注,其中硼掺杂p型非晶硅(p-a-Si∶H)发射极是高转换效率电池中不可忽视的重要部分,改变其硼掺杂浓度,可以调节p-layer薄膜的电学特性,从而直接影响电池转换效率。本文采用等离子体增强化学气相沉积(PECVD)设备制备HJT太阳电池,通过改变B_(2)H_(6)的掺杂浓度,对电池中p-a-Si∶H层进行优化,使HJT电池获得0.75%的相对效率提升。进一步地,将发射极设置为梯度掺杂的双层结构,经过优化,少子寿命(@Δn=5×10^(15)cm^(-3))和隐开路电压(@1-Sun)分别提升400μs和3 mV,最终具有梯度掺杂发射极的电池其平均效率相对提升2.03%,主要表现为FF和Voc的明显增加,实现了高效HJT电池p型发射极的工艺优化。

非晶硅/晶体硅(a-Si/c-Si)异质结

通过对非晶硅/晶体硅(a-Si/c-Si)异质结能带不连续、发射结掺杂以及界面态密度进行分析,研究它们对a-Si/c-Si异质结的界面特性,以及a-Si(N+)/c-Si(P)结构电池性能的影响.研究发现,能带不连续以及a-Si发射结高掺杂有利于实现界面复合机制由以悬挂键复合主导的复合机制向由少数载流子复合占主导的SRH(Shockly-Read-Hall)复合机制转变,有效降低界面复合速率.AFORS-HET软件模拟显示:在c-Si(P)衬底掺杂浓度为1.6×1016cm-3时,a-Si(N+)发射结掺杂浓度大于1.5×1020cm-3是获得高电池效率的必要条件;与短路电流密度相比,开路电压受a-Si/c-Si界面态密度影响更明显.

Preparation and Characterization of Storage and Emission Functional Material of Cs2O-doped 12CaO.7Al2O3

We provides a novel approach to generate low-temperature atomic oxygen anions （O-） emission using the cesium oxide-doped 12CaO.7Al2O3 （Cs2O-doped C12A7）. The maximal emission intensity of O- from the Cs2O-doped C12A7 at 700℃ and 800 V/cm reached about 0.54μA/cm2, which was about two times as strong as that from the un-doped C12A7 （0.23 μA/cm2） under the same condition. The initiative temperature of the O- emission from the Cs2O-doped C12A7 was about 500 ℃, which was also much lower than the initiative temperature from the un-doped C12A7 （570 ℃） in the given field of 800 V/cm. High pure O- emission close to 100% could be obtained from the Cs2O-doped C12A7 under the lower temperature （〈550℃）. The emission features of the Cs2O-doped C12A7, including the emission distribution, temperature effect, and emission branching ratio have been investigated in detail and compared with the un-doped C12A7. The structure and storage characteristics of the resulting material were also investigated via X-ray diffraction and electron paramagnetic resonance. It was found that doping Cs2Oto C12A7 will lower the initiative emission temperature and enhance the emission intensity

Preparation and infrared emissivities of alkali metal doped ZnO powders

Alkali metal(Li, Na, K) doped ZnO powders were synthesized by solid-state reaction at different calcination temperatures and holding time. Effects of holding time and K sources on the infrared emissivity of ZnO were investigated. The structure and surface morphologies of samples were characterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM). The UV-Vis absorption and infrared emissivities were investigated by a UV-Vis spectrophotometer and an infrared emissometer, respectively. XRD patterns confirm the wurtzite structure of the as prepared samples with single phase. Smooth grain surfaces are detected in all doped ZnO samples, while ZnO:Li and ZnO:Na present the aggregation of grains. The redshifts in the optical band-gap are observed in K-, Na-, and Li-doped ZnO with the values 3.150, 3.144, and 3.142 eV. Due to better crystalline quality, ZnO:K shows a lower emissivity than others. The emissivity of K-doped ZnO decreases to the minimum value(0.804), at 1200 °C and holding 2 h. Compared with KNO3 as K source, K2CO3 doped ZnO has lower emissivities.

Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering

Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly （002） oriented, and have an average transmittance -85 % in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13. 8 Ω· cm with the carrier concentration as high as 1.07 × 10^18 em^-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.

Emission property of Y_2O_3-doped Mo secondary emitter

Y2O3-doped Mo secondary emitters were prepared by liquid-liquid doping and solid-solid doping,respectively.The back-scattered scanning observation result indicates that the emitter prepared by liquid-liquid doping has fine microstructure whereas that prepared by solid-solid doping has large grain size.Y2O3-doped Mo emitter with small grain size prepared by liquid-liquid doping exhibits high emission property,i.e.,the secondary electron yield can get to 5.24,about 1.7 times that prepared by solid-solid doping.Moreover,Y2O3-doped Mo emitter exhibits the best emission performance among La2O3-doped Mo,Y2O3-doped Mo, Gd2O3-doped Mo and Ce2O3-doped Mo emitters due to the largest penetration depth of primary electrons and escape depth of secondary electrons in this emitter.The secondary emission of the emitter with small grain size can be explained by reflection emission model and transmission emission model,whereas only transmission emission exists in the emitter with large grain size.

The Effect of Siliconization on Impurity Emission on HL-2A Tokamak

HL-2A is a new middle-sized tokamak device with two closed divertors. In 2004 campaign siliconization as a wall condition has been first done on HL-2A since the starting operation of the device. By using sil-iconization we observed that impurity has been obviously decreased. The character of the siliconization and the effect of wall condition on plasma have been investigated as well as on the wall recycling.

Infrared emissivity of transition elements doped ZnO

Infrared emissivity was studied in Zno.99Mo.olO （M is Mn, Fe or Ni） and Znl_xCoxO （x=0.01, 0.02, 0.03 and 0.04） powders synthesized by solid-state reaction at various temperatures. XRD patterns confirm the wurtzite structure of the prepared samples. No peaks of other phases arising from impurities are detected in Mn- and Co-doped ZnO, hut the peaks of ZnFe204 and NiO are observed in Zno.99Feo.010 and Zno.99Nio.o10. The SEM observations indicate that with larger grain sizes than those of Zn0.99Feo.010 and Zno.99Ni0.010, Co-doped ZnO exhibits smooth grain surfaces. The infrared absorption spectra show that infrared absorptions related to oxygen in Zn0.99M0.010 are much stronger than those in Co-doped ZnO. Co ions are dissolved into the ZnO lattice with Co2＋ state from XPS spectra analysis. The infrared emissivity results imply that the emissivity of Zno.99Ni0.010 is the highest （0.829） and that of Zno.99C00.010 is the lowest （0.784） at 1 200 ℃. The emissivity of Zno.99Co0.010 decreases to the minimum （0.752） at 1 150 ℃ and then increases with growing calcination temperature. As the Co doping content grows, the emissivity of Co-doped ZnO calcined at 1 200 ℃ falls to 0.758 in the molar fraction of 3% and then ascends.

Nd^(3+) doped fluorochlorozirconate glass: 3.9 μm MIR emission properties and energy transfer

The Nd^(3+) doped fluorochlorozirconate(FCZ) glass was prepared by melt-quenching method. The 3.9 μm emission from Nd^(3+) ions is attributed to the two-photon absorption process. The strong emission transition at 3.9 μm fluorescence peak intensity, corresponding to the ~4G_(11/2)→~2K_(13/2) transition, is directly proportional to the NaCl concentration. With the increase of the Cl-ions amount, the mid-infrared(MIR) luminescent intensity is significantly enhanced. Additionally, the Judd-Ofelt(J-O) parameter ?_2 is larger than that of the fluorozirconate(FZ) glass, which indicates the covalency of the bond between RE ions and ligand is stronger as Cl-ions substitution of F-ions in chloride FZ glass. The X-ray diffraction(XRD) patterns show that the amorphous glassy state keeps the FZ glass network structure. In brief, the advantageous spectroscopic characteristics make the Nd^(3+)-doped FCZ glass be a promising candidate for application of 3.9 μm emission.

Enhancement of red emission by co-dopant Ln^(3+) ions in Eu^(3+) :LaOF nanoparticles

Fluoride nanoparticles of Ln3＋（Ln3＋=Pr3＋, Nd3＋, Sm3＋, Cod3＋,Tb3＋ Dy3＋, I-I03＋, Er3＋, Tm3＋, yb3＋）/Eu3＋：LaOF and Eu3＋：LaOF with rhombohedral crystal structure were prepared by a hydrothermal-sintering method. The red fluorescence emission of Eu3＋ ions was found to be enhanced with most of the co-dopant Ln3. ions. Compared with strong fluorescence emission at 610 nm of Eu3＋：LaOF nanoparticles, the enhancement factors was up to ten times in Ln3~ （Ln3＋=Gd3＋, Dy3＋, Tm3＋）FEu3＋：LaOF co-doped nanoparticles. The results show that the asymmetry of the local environment of Eu3＋ ion was reduced by co-doping Ln3＋ ion into the nanoparticles, and that energy transfer might occur between Eu3_ and codopant Ln3＋ ions, which is suggested as the source of the observed fluorescence enhancement.

Large-scale synthesis of single-source, thermally stable, and dual-emissive Mn-doped Zn-Cu-ln-S nanocrystals for bright white light-emitting diodes

The global demand for resource sustainability is growing. Thus, the development of single-source, environment-friendly colloidal semiconductor nanocrystal （NC） phosphors with broadband emission spectra is highly desirable for use as color converters in white light-emitting diodes （WLEDs）. We report herein the gram-scale synthesis of single-source, cadmium-free, dual-emissive Mn-doped Zn-Cu-In-S NCs （d-dots） by a simple, non-injection, low-cost, one-pot approach. This synthesis method led to the formation of NCs with continuously varying compositions in a radial direction because each precursor had a different reactivity. Consequently, the d-dots exhibited two emission bands, one that could be attributed to Mn emission and a second that could be ascribed to the band edge of the Zn-Cu-In-S NCs. The emission peaks assigned to band edge were tunable by modifying the particle size and composition. The prepared d-dots also exhibited the characteristic zero self-absorption, a quantum yield of 46%, and good thermal stability. Combining a commercial blue light-emitting diode （LED） chip with optimized d-dots as color converters gave a high color rendering index of up to 90, Commission Internationale de l＇eclairage color coordinates of （0.332, 0.321）, and a correlated color temperature of 5,680 K. These results suggest that cadmium-free, thermally stable, single-phase d-dot phosphors have potential applications in WLEDs.

Controlling synthesis and host sensitized Eu^(3+) emissions of K_5Gd_9F_(32) and GdF_3

By controlling the reactant ratios, hydrothermal time, hydrothermal temperatures, p H values of the prepared solutions, and the concentrations of K3C6H5O7·2H2O, 1 mol% Eu3+ doped cubic phase of K5Gd9F32 and/or orthorhombic phase of Gd F3 micro/nanocrystals have been synthesized based on a hydrothermal method. For comparison, the sample was also synthesized by a co-precipitation method. The samples were characterized by X-ray diffraction(XRD) patterns, field emission scanning electron microscopy(FE-SEM) images, energy-dispersive spectroscopy(EDS) spectra, and photoluminescence(PL) excitation and emission spectra. By host Gd3+ sensitizing, the Eu3+ presents relatively strong emissions. The energy transfers from host Gd3+ to doping Eu3+ are observed in all the samples and the energy transfer plays an important role in the emission of Eu3+. Acting as a probe, the Eu3+ presents its distinct optical properties in the samples.

Progress on RE2O3-Mo/W matrix secondary emitter materials

Two types of secondary emitter materials, the rare earth oxides(RE_2O_3) doped Mo cermet cathodes and the Y_2O_3-W matrix pressed cathode, are introduced in this paper. According to the calculation results, Y_2O_3 exhibits the best secondary emission property among Y_2O_3,La_2O_3,CeO_2 and Lu_2O_3. The rare earth oxides co-doped Mo cathodes in which Y_2O_3 is the main active substance exhibit better secondary emission property than single RE_2O_3 doped Mo cathode. The results obtained by the Monte-Carlo calculation method show that the secondary electron emission property is strongly related to the grain size of the cathode. The decreasing of the grain size reduces the positive charge effect of the rare earth oxide due to the electrons supplement from the metal to the rare earth oxide, whereby the secondary electrons are easier to escape into the vacuum. Y_2O_3 is introduced into Ba-W cathode to fabricate a pressed Y_2O_3-W matrix dispenser cathode. The result indicates that the secondary emission yield of the Ba-W cathode increases from 2.13 to 3.51 by adding Y_2O_3, and the thermionic emission current density(J_0) could reach 4.18 A/cm^2 at 1050 ℃b.

Improving the luminescence properties of Ba_3Eu(PO_4)_3 by doping Sm^(3+) as sensitizer

For enhancing the emission intensity and broadening the excitation region of Ba3Eu（PO4）3 （BEP）, Sm3＋ is doped as sensitizer in this paper. BEP：Sm3＋ can produce an obvious red emission at near ultraviolet （n-UV） radiation. An effec- tive energy transfer from Sm3＋ to Eu3＋ is proved. The commission international de I＇Eclairage （CIE） chromaticity co- ordinates of BEP：Sm3＋ locate at red region. When the environment temperature is 150 ℃, the emission intensity of BEP：0.10Sm3＋ is decreased to 76% of the initial one at room temperaatre, and the activation energy is calculated to be 0.164 eV, which can prove the good thermal stability of BEP：Sm3＋. The results indicate that BEP：Sm3＋ may have po- tential applications in white light emitting diodes （LEDs）.

Enhancement of 2.0 μm fluorescence emission in new Ho^(3+)/Tm^(3+)/Yb^(3+) tri-doped tellurite glasses

For enhancing the 2.0 μm band fluorescence of Ho^(3+), a certain amount of WO_3 oxide was introduced into Ho^(3+)/Tm^(3+)/Yb^(3+) tri-doped tellurite glass prepared using melt-quenching technique. The prepared tri-doped tellurite glass was characterized by the absorption spectra, fluorescence emission and Raman scattering spectra, together with the stimulated absorption, emission cross-sections and gain coefficient. The research results show that the introduction of WO_3 oxide can further improve the 2.0 μm band fluorescence emission through the enhanced phonon-assisted energy transfers between Ho^(3+)/Tm^(3+)/Yb^(3+) ions under the excitation of 980 nm laser diode(LD). Meanwhile, the maximum gain coefficient of Ho^(3+) at 2.0 μm band reaches about 2.36 cm^(-1). An intense 2.0 μm fluorescence emission can be realized.

Photoluminescence properties of solid-state Tb^(3+) doped NaY(MoO_4)_2

A series of Tb3+ doped Na Y(Mo O4)2 are synthesized by a solid-state reaction at 550 °C for 4 h, and their luminescent properties are investigated. The phase formation is carried out with X-ray powder diffraction analysis, and there is no other crystalline phase except Na Y(Mo O4)2. Na Y(Mo O4)2:Tb3+ can produce the green emission under 290 nm radiation excitation, and the luminescence emission peak at 545 nm corresponds to the 5D4→7F5 transition of Tb3+. The emission intensity of Tb3+ in Na Y(Mo O4)2 is enhanced with the increase of Tb3+ concentration, and there is no concentration quenching effect. The phenomena are proved by the decay curves of Tb3+. Moreover, the Commission International de I'Eclairage(CIE) chromaticity coordinates of Na Y(Mo O4)2:Tb3+ locate in the green region.

Luminescent properties of Tm^(3+)/ Ho^(3+) co-doped LiYF_4 crystals

Ho3+ with various concentrations and Tm3+ with molar concentration of 1.28% are co-doped in Li YF4(YLF) single crystals. The luminescent properties of the crystals are investigated through emission spectra, emission cross section and decay curves under the excitation of 808 nm. The energy transfer from Tm3+ to Ho3+ and the optimum fluorescence emission of Ho3+ around 2.05 μm are investigated. The emission intensity at 2.05 μm keeps increasing with the molar concentration of Ho3+ improved from 0.50% to 1.51% when the molar concentration of Tm3+ is kept at 1.28%. Moreover, for the co-doped crystals in which the molar concentrations of Tm3+ and Ho3+ are 1.28% and 1.51%, respectively, the maximum emission cross section reaches 0.760×10–20 cm2 and the maximum fluorescence lifetime is 21.98 ms. All the parameters suggest that these materials have more advantages in the future 2.0 μm laser applications.

The optical properties of Tm^(3+) doped Na_5Lu_9F_(32) single crystal

Tm^(3+) doped Na_5Lu_9F_(32) single crystal with high optical quality was grown by an improved Bridgman method. The Judd-Ofelt intensity parameters ?_t(t=2, 4, 6) were calculated according to the measured absorption spectra and physical-chemical properties of the obtained Na_5Lu_9F_(32) single crystal. The stimulated emission cross-section of the ~3F_4→~3H_6 transition(～1.8 μm) is 0.35×10^(-20) cm^2 for Tm^(3+) doped Na_5Lu_9F_(32) single crystal. The emission spectra under the excitation of 790 nm laser diode(LD) and fluorescence lifetime at 1.8 μm were measured to reveal the fluorescence properties of Tm^(3+) doped Na_5Lu_9F_(32) single crystal. The research results show that the Tm^(3+) doped Na_5Lu_9F_(32) single crystal has larger stimulated emission cross-section compared with other crystals. All these spectral properties suggest that this kind of Tm^(3+)doped Na_5Lu_9F_(32) crystal with high physical-chemical stability and high-efficiency emission at 1.8 μm may be used as potential laser materials for optical devices.