采用射频磁控溅射法,在不同的衬底温度下制备了钽(Ta)掺杂的氧化锌(ZnO)薄膜,采用X射线能谱(EDS)、X射线衍射(XRD)、扫描电镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱研究了衬底温度对制备的Ta掺杂ZnO薄膜的组分、微观结构、形貌...采用射频磁控溅射法,在不同的衬底温度下制备了钽(Ta)掺杂的氧化锌(ZnO)薄膜,采用X射线能谱(EDS)、X射线衍射(XRD)、扫描电镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱研究了衬底温度对制备的Ta掺杂ZnO薄膜的组分、微观结构、形貌和光学特性的影响。EDS的检测结果表明,Ta元素成功掺入到了ZnO薄膜;XRD图谱表明,掺入的Ta杂质是替代式杂质,没有破坏ZnO的六方晶格结构,随着衬底温度的升高,(002)衍射峰的强度先增大后降低,在400℃时达到最大;SEM测试表明当衬底温度较高时(400℃和500℃),Ta掺杂ZnO薄膜的晶粒明显变大;紫外-可见透过光谱显示,在可见光范围,Ta掺杂ZnO薄膜的平均透光率均高于80%,衬底不加热时制备的Ta掺杂ZnO的透光率最高;制备的Ta掺杂ZnO薄膜的禁带宽度范围为3.34~3.37 e V,衬底温度为500℃时制备的Ta掺杂ZnO薄膜的禁带宽度最小,为3.34 e V。PL光谱表明衬底温度为500℃时制备的Ta掺杂ZnO薄膜中缺陷较多,这也是造成薄膜禁带宽度变小的原因。展开更多
Boron-doped diamond (BDD) film electrodes using Ta as substrates were employed for anodic oxidation of salicylic acid (SA). The effects of operational variables including initial concentration,current density,temperat...Boron-doped diamond (BDD) film electrodes using Ta as substrates were employed for anodic oxidation of salicylic acid (SA). The effects of operational variables including initial concentration,current density,temperature and pH were examined. The results showed that BDD films deposited on the Ta substrates had high electrocatalytic activity for SA degradation. There was little effect of pH on SA degradation. The current efficiency (CE) was found to be dependent mainly on the initial SA concentration,current density and temperature. Chemical oxygen demand (COD) was reduced from 830 mg/L to 42 mg/L under a current density of 200 A/m2 at 30 °C.展开更多
文摘采用射频磁控溅射法,在不同的衬底温度下制备了钽(Ta)掺杂的氧化锌(ZnO)薄膜,采用X射线能谱(EDS)、X射线衍射(XRD)、扫描电镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱研究了衬底温度对制备的Ta掺杂ZnO薄膜的组分、微观结构、形貌和光学特性的影响。EDS的检测结果表明,Ta元素成功掺入到了ZnO薄膜;XRD图谱表明,掺入的Ta杂质是替代式杂质,没有破坏ZnO的六方晶格结构,随着衬底温度的升高,(002)衍射峰的强度先增大后降低,在400℃时达到最大;SEM测试表明当衬底温度较高时(400℃和500℃),Ta掺杂ZnO薄膜的晶粒明显变大;紫外-可见透过光谱显示,在可见光范围,Ta掺杂ZnO薄膜的平均透光率均高于80%,衬底不加热时制备的Ta掺杂ZnO的透光率最高;制备的Ta掺杂ZnO薄膜的禁带宽度范围为3.34~3.37 e V,衬底温度为500℃时制备的Ta掺杂ZnO薄膜的禁带宽度最小,为3.34 e V。PL光谱表明衬底温度为500℃时制备的Ta掺杂ZnO薄膜中缺陷较多,这也是造成薄膜禁带宽度变小的原因。
文摘Boron-doped diamond (BDD) film electrodes using Ta as substrates were employed for anodic oxidation of salicylic acid (SA). The effects of operational variables including initial concentration,current density,temperature and pH were examined. The results showed that BDD films deposited on the Ta substrates had high electrocatalytic activity for SA degradation. There was little effect of pH on SA degradation. The current efficiency (CE) was found to be dependent mainly on the initial SA concentration,current density and temperature. Chemical oxygen demand (COD) was reduced from 830 mg/L to 42 mg/L under a current density of 200 A/m2 at 30 °C.
