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镨掺杂分布对1.3μm光纤放大器特性影响 被引量:1
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作者 竺逸年 《光通信研究》 1996年第4期35-38,共4页
对掺氟化镨玻璃光纤放大器的小信号增益,用广义的高斯近似公式可获得精确的分析表达。文中研究了限制光纤芯层中央部分的镨掺杂对光纤放大器特性的影响,结果发现限制镨掺杂分布能改进光纤放大器的工作效率。
关键词 掺杂分布 掺镨光纤放大器 掺杂限制
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限制掺杂光纤的模场分析
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作者 李泽斌 《中国激光》 EI CAS CSCD 北大核心 2013年第B12期130-134,共5页
限制掺杂光纤是获得大功率输出同时保持光束质量的有效途径。通过数值模拟的方法对比了限制掺杂光纤与传统阶跃光纤在模场分布及导致的光束质量的差异。模拟了输入光束偏移、倾斜等情况对限制掺杂光纤输出模场分布的影响,并分析了按一... 限制掺杂光纤是获得大功率输出同时保持光束质量的有效途径。通过数值模拟的方法对比了限制掺杂光纤与传统阶跃光纤在模场分布及导致的光束质量的差异。模拟了输入光束偏移、倾斜等情况对限制掺杂光纤输出模场分布的影响,并分析了按一定比例混合注入多个模式时限制掺杂光纤的模场分布。 展开更多
关键词 光纤光学 模式 数值仿真 限制掺杂光纤
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Photoluminescence of the Beryllium Acceptor at the Centre of Quantum Wells
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作者 郑卫民 李素梅 +2 位作者 吕英波 王爱芳 吴爱玲 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第11期2115-2120,共6页
We report photoluminescence studies of internal transitions of shallow Be acceptors in bulk GaAs and a series of S-doped GaAs/ALAs multiple quantum well samples with well width ranging from 3 to 20nm. A series of Be S... We report photoluminescence studies of internal transitions of shallow Be acceptors in bulk GaAs and a series of S-doped GaAs/ALAs multiple quantum well samples with well width ranging from 3 to 20nm. A series of Be S-doped GaAs/ AlAs multiple-quantum wells with the doping at the well center and a single epilayer of GaAs uniformly Be doped were grown by molecular beam epitaxy. The photoluminescence spectra were measured at 4,20,40, 80, and 120K, respectively. A two-hole transition of the acceptor-bound exciton from the ground state, 1S3/2 (/8), to the first-excited state, 2S3/2 (Г6) , has been clearly observed. A variational principle is presented to obtain the 2s-1s transition energies of quantum confined Be acceptors as a function of the well width under the single-band effective mass and envelop function approximations. It is found that the acceptor transition energy increases with decreasing quantum-well width, and the experimental results agree well with the theoretical calculation. 展开更多
关键词 quantum confined acceptors δ-doped multiple quantum wells PHOTOLUMINESCENCE
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