We provides a novel approach to generate low-temperature atomic oxygen anions （O-） emission using the cesium oxide-doped 12CaO.7Al2O3 （Cs2O-doped C12A7）. The maximal emission intensity of O- from the Cs2O-doped C1...We provides a novel approach to generate low-temperature atomic oxygen anions （O-） emission using the cesium oxide-doped 12CaO.7Al2O3 （Cs2O-doped C12A7）. The maximal emission intensity of O- from the Cs2O-doped C12A7 at 700℃ and 800 V/cm reached about 0.54μA/cm2, which was about two times as strong as that from the un-doped C12A7 （0.23 μA/cm2） under the same condition. The initiative temperature of the O- emission from the Cs2O-doped C12A7 was about 500 ℃, which was also much lower than the initiative temperature from the un-doped C12A7 （570 ℃） in the given field of 800 V/cm. High pure O- emission close to 100% could be obtained from the Cs2O-doped C12A7 under the lower temperature （〈550℃）. The emission features of the Cs2O-doped C12A7, including the emission distribution, temperature effect, and emission branching ratio have been investigated in detail and compared with the un-doped C12A7. The structure and storage characteristics of the resulting material were also investigated via X-ray diffraction and electron paramagnetic resonance. It was found that doping Cs2Oto C12A7 will lower the initiative emission temperature and enhance the emission intensity展开更多
基金supported by the National Natural Science Foundation of China(50772107)National Key Basic Research Program of China(973)(2007CB210206)National High-Tech Research and Development Program of China(863)(2009AA05Z435)~~
基金This work is supported by the National Natural Science Foundation of China （No.50772107）, the National High Tech Research and Development Program （No.2009AA05Z435）, and the National Basic Research Program of the Ministry of Science and Technology of China （No.2007CB210206）.
文摘We provides a novel approach to generate low-temperature atomic oxygen anions （O-） emission using the cesium oxide-doped 12CaO.7Al2O3 （Cs2O-doped C12A7）. The maximal emission intensity of O- from the Cs2O-doped C12A7 at 700℃ and 800 V/cm reached about 0.54μA/cm2, which was about two times as strong as that from the un-doped C12A7 （0.23 μA/cm2） under the same condition. The initiative temperature of the O- emission from the Cs2O-doped C12A7 was about 500 ℃, which was also much lower than the initiative temperature from the un-doped C12A7 （570 ℃） in the given field of 800 V/cm. High pure O- emission close to 100% could be obtained from the Cs2O-doped C12A7 under the lower temperature （〈550℃）. The emission features of the Cs2O-doped C12A7, including the emission distribution, temperature effect, and emission branching ratio have been investigated in detail and compared with the un-doped C12A7. The structure and storage characteristics of the resulting material were also investigated via X-ray diffraction and electron paramagnetic resonance. It was found that doping Cs2Oto C12A7 will lower the initiative emission temperature and enhance the emission intensity
