PVT法生长n型4H-SiC电阻率的研究

采用PVT法掺氮得到n型4H-SiC体单晶。研究了生长温度、冷却孔直径和掺氮量对电阻率的影响。实验结果表明:生长温度越低,掺氮量越多,晶片电阻率越低;冷却孔直径越小,掺氮量越多,晶片电阻率分布越均匀。但掺氮量过多会导致晶体结晶质量下降。电阻率的分布与背景B和Al含量相关,随着C/Si的升高,生长台阶的降低,电阻率升高。通过调整温场和优化掺氮工艺,获得了结晶质量较好的n型4H-SiC单晶。

n型4H-SiC单晶生长工艺研究

采用PVT法掺氮得到n型4H-SiC体单晶。研究了生长温度、冷却孔直径、掺氮量对晶体结晶质量的影响。实验结果表明:生长温度过低或过高会引入多型;冷却孔过大会使晶体产生较大的热应力,导致晶体开裂;掺入较多的氮使SiC晶格畸变。通过调整温场、优化掺氮工艺,获得了生长n型4H-SiC单晶的工艺条件,生长出结晶质量较好的n型4H-SiC单晶。

Boosting the photocatalytic performance of Ag_2CO_3 crystals in phenol degradation via coupling with trace N-CQDs

A series of N‐CQDs/Ag2CO3composite crystals(where N‐CQDs=Nitrogen doped carbon quantumdots)were prepared by adding different volumes of a solution of N‐CQDs during Ag2CO3crystalgrowth.Under irradiation from a350‐W Xe lamp light(with optical filter,λ≥420nm),the performanceof N‐CQDs/Ag2CO3in photocatalytic degradation of phenol was evaluated.The as‐preparedsamples were analyzed by XRD,SEM,TEM,BET,element mapping,UV‐vis DRS,FT‐IR,XPS,transientphotocurrent response and EIS testing.The results showed that after coupling with trace amountsof N‐CQDs,both the photocatalytic activity and stability of Ag2CO3were greatly boosted.The additionof N‐CQDs solution influenced the crystallization of Ag2CO3,resulting in a distinct decrease inAg2CO3crystal size and an obvious increase in surface area.Moreover,the charge transfer resistancewas greatly reduced,and the separation efficiency of photogenerated electrons and holes wasstrongly promoted.The presence of NCQDs on the surface of the catalysts facilitates the transfer ofphotogenerated electrons,slowing the photocorrosion rate of Ag2CO3,and then resulting in higherstability than bare Ag2CO3in degradation.The synergistic effect of the improvement of morphologyand charge transfer rate thus accounted for the superior photocatalytic performance ofN‐CQDs/Ag2CO3.

Construction of nitrogen and phosphorus co-doped graphene quantum dots/Bi5O7I composites for accelerated charge separation and enhanced photocatalytic degradation performance

Nitrogen and phosphorus co-doped graphene quantum dot-modified Bi5O7 I(NPG/Bi5O7 I)nanorods were fabricated via a simple solvothermal method.The morphology,structure,and optical properties of the as-prepared samples were investigated by X-ray diffraction,scanning electron microscopy,high-resolution transmission electron microscopy,X-ray photoelectron spectroscopy(XPS),and diffused reflectance spectroscopy.The photocatalytic performance was estimated by degrading the broad-spectrum antibiotics tetracycline and enrofloxacin under visible light irradiation.The photodegradation activity of Bi5O7 I improved after its surface was modified with NPGs,which was attributed to an increase in the photogenerated charge transport rate and a decrease in the electron-hole pair recombination efficiency.From the electron spin resonance spectra,XPS valence band data,and free radical trapping experiment results,the main active substances involved in the photocatalytic degradation process were determined to be photogenerated holes and superoxide radicals.A possible photocatalytic degradation mechanism for NPG/Bi5O7 I nanorods was proposed.

Nitrogen-doped black titania for high performance supercapacitors

For energy storage system,it is still a huge challenge to achieve high energy density and high power density simultaneously.One potential solution is to fabricate electrochemical capacitors(ECs),which store electric energy through surface ion adsorption or redox reactions.Here we report a new electrode material,heavy nitrogen-doped(9.29 at.%)black titania(TiO2-x:N).This unique hybrid material,consisting of conductive amorphous shells supported on nanocrystalline cores,has rapid N-mediated redox reaction(TiO2-xNy+zH++ze■-TiO2-xNyHz),especially in acidic solutions,providing a specific capacitance of 750 Fg-1at 2 m V s-1(707 Fg-1at 1 A g-1),great rate capability(503 F g-1at 20 Ag-1),and maintain stable after initial fading.Being a new developed supercapacitor material,nitrogen-doped black titania may revive the oxide-based supercapacitors.

Effects of flux on crystal structure and luminescent properties of nitroxides phosphors

Yellow-green-emitting Sr Si2O2N2:Eu2+phosphors were synthesized with Sr2Si O4:Eu2+as precursor.The effects of flux and the concentration of Eu2+on the crystal structure and luminescent properties of the phosphors were investigated.Results suggested that the optimal content of flux Na2CO3 was 1 wt%and the optimal doping concentration of Eu2+was 0.05 mol.The emission spectra showed the most intense peaks located at 535 nm which corresponded to the 4f65d→4f7 transition of Eu2+.The excitation spectra showed that these phosphors could be effectively excited by near-ultraviolet and blue light,whichwas consistent with the widely applied output wavelengths of near-ultraviolet and blue-white light-emitting diode(LED)chips.When the influence of flux on the luminescent properties of Sr Si2O2N2:Eu2+phosphor was analyzed,the X-ray diffraction(XRD)patterns indicated that the flux could help the crystallization of the phosphors.No other phases except the triclinic structure of Sr Si2O2N2 were formed.The thermal stability and the emission intensity of synthesized Sr Si2O2N2:Eu2+phosphor were examined and compared with commercial YAG yellow phosphors.All results indicate that the yellow-green-emitting phosphor is a suitable candidate for the fabrication of white LEDs.