A detailed study is presented on magnetic, electrical and optical properties of Gal_xMnxN： Si film grown by metal organic chemical vapor deposition （MOCVD） with high-purity Sill4 as the Si dopant source. The room-t...A detailed study is presented on magnetic, electrical and optical properties of Gal_xMnxN： Si film grown by metal organic chemical vapor deposition （MOCVD） with high-purity Sill4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled （ZFC）/field-cooled （FC） measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Gal-xMnxN. Cathode luminescence （CL） measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.展开更多
文摘A detailed study is presented on magnetic, electrical and optical properties of Gal_xMnxN： Si film grown by metal organic chemical vapor deposition （MOCVD） with high-purity Sill4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled （ZFC）/field-cooled （FC） measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Gal-xMnxN. Cathode luminescence （CL） measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.
