Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condi...Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condition of the different reaction time from 12 h to 48 h for the first time. The morphology, phase composition and particle size of the ITO powder were characterized by TEM and XRD. Two significant properties required for ITO samples to become noncarbon support for Pt in PEMFCs including specific surface area and electrical conductivity were studied.展开更多
主要技术内容：掺锡氧化铟（Indium Tin Oxide，简称ITO）材料是一种n型半导体材料，该类材料包括ITO粉末、靶材、导电浆料及ITO透明导电薄膜，主要应用于平板显示器（如LCD）、防辐射玻璃、太阳能电池板等领域。日本、美国和德国于上世...主要技术内容：掺锡氧化铟（Indium Tin Oxide，简称ITO）材料是一种n型半导体材料，该类材料包括ITO粉末、靶材、导电浆料及ITO透明导电薄膜，主要应用于平板显示器（如LCD）、防辐射玻璃、太阳能电池板等领域。日本、美国和德国于上世纪70年代研制ITO靶材，目前已形成规模产业，主要采用冷压一烧结工艺成形和致密化，同时兼顾热压和热等静压工艺，展开更多
文摘Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condition of the different reaction time from 12 h to 48 h for the first time. The morphology, phase composition and particle size of the ITO powder were characterized by TEM and XRD. Two significant properties required for ITO samples to become noncarbon support for Pt in PEMFCs including specific surface area and electrical conductivity were studied.
文摘主要技术内容：掺锡氧化铟（Indium Tin Oxide，简称ITO）材料是一种n型半导体材料，该类材料包括ITO粉末、靶材、导电浆料及ITO透明导电薄膜，主要应用于平板显示器（如LCD）、防辐射玻璃、太阳能电池板等领域。日本、美国和德国于上世纪70年代研制ITO靶材，目前已形成规模产业，主要采用冷压一烧结工艺成形和致密化，同时兼顾热压和热等静压工艺，
