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氩氧流量比对掺锌二氧化钛薄膜亲水性能影响的研究
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作者 张秀燕 林碧贞 吴秀秀 《中国非金属矿工业导刊》 2013年第2期35-36,共2页
采用射频磁控溅射法制备掺锌二氧化钛薄膜,控制溅射时间为2h,溅射功率为100W,500℃退火2h不变的情况下,研究不同的Ar/O2流量比对掺锌TiO2薄膜亲水性能的影响。试验结果表明:在无退火的情况下Ar/O2为3∶7的光致亲水性能较好,而退火能够... 采用射频磁控溅射法制备掺锌二氧化钛薄膜,控制溅射时间为2h,溅射功率为100W,500℃退火2h不变的情况下,研究不同的Ar/O2流量比对掺锌TiO2薄膜亲水性能的影响。试验结果表明:在无退火的情况下Ar/O2为3∶7的光致亲水性能较好,而退火能够改善薄膜的亲水性能,当Ar/O2为4∶6时,所制备的薄膜光致亲水性能最稳定。 展开更多
关键词 Ar O2 流量比 掺锌tio2薄膜 磁控溅射 超亲水性能
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Characterization and photoelectrochemical performance of Zn-doped TiO_2 films by sol-gel method 被引量:9
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作者 Li-ying QIAO Feng-yu XIE +3 位作者 Ming-hui XIE Cai-hua GONG Wei-lang WANG Jia-cheng GAO 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第8期2109-2116,共8页
Zn-doped TiO2 (Zn?TiO2) thin films were prepared by the sol?gel method on titanium substrates with heat treatment at different temperatures. The effects of heat treatment temperatures and Zn doping on the structure, p... Zn-doped TiO2 (Zn?TiO2) thin films were prepared by the sol?gel method on titanium substrates with heat treatment at different temperatures. The effects of heat treatment temperatures and Zn doping on the structure, photocathodic protection and photoelectrochemical properties of TiO2 thin films were investigated. It is indicated that the photoelectrical performance of the Zn?TiO2 films is enhanced with the addition of Zn element compared with the pure-TiO2 film and the largest decline by 897 mV in the electrode potential is achieved under 300 °C heat treatment. SEM?EDS analyses show that Zn element is unevenly distributed in Zn?TiO2 films; XRD patterns reveal that the grain size of Zn?TiO2 is smaller than that of pure-TiO2; FTIR results indicate that Zn - O bond forms on Zn?TiO2 surface. Ultraviolet visible absorption spectra prove that Zn?TiO2 shifts to visible light region.Mott?Shottky curves show that the flat-band potential of Zn?TiO2 is more negative and charge carrier density is bigger than that ofpure-TiO2, implying that under the synergy of the width of the space-charge layer, carrier density and flat-band potential, Zn?TiO2 with 300 °C heat treatment displays the best photocathodic protection performance. 展开更多
关键词 tio2 films Zn-doping photocathodic protection photoelectrochemical activity sol.gel method
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