To study the influence of rainfall on pavement skid-resistance performance and driving safety,the water film thickness(WFT)concept considering the longitudinal and transverse slopes of the pavement was utilized based ...To study the influence of rainfall on pavement skid-resistance performance and driving safety,the water film thickness(WFT)concept considering the longitudinal and transverse slopes of the pavement was utilized based on the total discharge formulation and turbulence theory of slope flow.Using experimental data measured using the British pendulum test under varying WFT levels,a model for calculating the skid resistance,namely the British pendulum number(BPN),was formulated and used to quantitatively evaluate the effects of rainfall intensity,transverse,and longitudinal slopes on the computed BPN.The study results reveal that skid resistance is linearly proportional to the pavement transverse slope and inversely proportional to the rainfall intensity and the pavement longitudinal slope.In particular,rainfall intensity,along with pavement texture depth,exhibited a significant impact on the tire-pavement friction and skid-resistance performance.The results further indicate that driving safety under wet weather is predominantly governed by skid resistance and visibility.The BPN and sideway force coefficient(SFC60)values for new asphalt pavements under different rainfall intensities are provided along with some modification to the stopping sight distance(SSD)criteria.Safe driving speed limits are also determined using a safe-driving model to develop the appropriate speed limit strategies.The overall study results provide some insights,methodology approach,and reference data for the evaluation of pavement skid-resistance performance and driving safety conditions under different pavement slopes and rainfall intensities.展开更多
Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be h...Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional(2D) subthermionic field-effect transistors(FETs) with sub-5 nm gate lengths based on ferroelectric(FE) van der Waals heterostructures(vdWHs).The FE vd WHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices.展开更多
基金The National Natural Science Foundation of China(No.51478114)
文摘To study the influence of rainfall on pavement skid-resistance performance and driving safety,the water film thickness(WFT)concept considering the longitudinal and transverse slopes of the pavement was utilized based on the total discharge formulation and turbulence theory of slope flow.Using experimental data measured using the British pendulum test under varying WFT levels,a model for calculating the skid resistance,namely the British pendulum number(BPN),was formulated and used to quantitatively evaluate the effects of rainfall intensity,transverse,and longitudinal slopes on the computed BPN.The study results reveal that skid resistance is linearly proportional to the pavement transverse slope and inversely proportional to the rainfall intensity and the pavement longitudinal slope.In particular,rainfall intensity,along with pavement texture depth,exhibited a significant impact on the tire-pavement friction and skid-resistance performance.The results further indicate that driving safety under wet weather is predominantly governed by skid resistance and visibility.The BPN and sideway force coefficient(SFC60)values for new asphalt pavements under different rainfall intensities are provided along with some modification to the stopping sight distance(SSD)criteria.Safe driving speed limits are also determined using a safe-driving model to develop the appropriate speed limit strategies.The overall study results provide some insights,methodology approach,and reference data for the evaluation of pavement skid-resistance performance and driving safety conditions under different pavement slopes and rainfall intensities.
基金This work was supported by National Key R&D Program of China(2018YFA0703700 and 2016YFA0200700)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)+2 种基金the National Natural Science Foundation of China(61625401,61851403,11674072,91964203,and 61804146)CAS Key Laboratory of Nanosystem and Hierarchical FabricationThe authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS.
文摘Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional(2D) subthermionic field-effect transistors(FETs) with sub-5 nm gate lengths based on ferroelectric(FE) van der Waals heterostructures(vdWHs).The FE vd WHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices.
