The performance of a microwave monolithic integrated circuit .（MMIC） amplifier with high output power in the Ka-band is presented. Using 75mm 0.25μm GaAs PHEMT technology provided by the Hebei Semiconductor Researc...The performance of a microwave monolithic integrated circuit .（MMIC） amplifier with high output power in the Ka-band is presented. Using 75mm 0.25μm GaAs PHEMT technology provided by the Hebei Semiconductor Research Institute, this three-stage power amplifier, with a chip size of 19.25mm^2 （3.5mm × 5.5mm）, on 100μm GaAs substrate achieves a linear gain of more than 16dB in the 32.5-35.5GHz frequency range,with an average output power at 1dB gain compression of P1dB = 29. 8dBm and a maximum saturated output power of Psat = 31dBm.展开更多
A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink eff...A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency （PAE） of 50% is achieved with an output power of up to 27dBm from this device.展开更多
Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier （PA）, a modu...Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier （PA）, a modulator, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output ldB power of 17.6dBm while maintaining a maximum PAE of 35.4%.展开更多
A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltag...A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.展开更多
A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performanc...A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.展开更多
文摘The performance of a microwave monolithic integrated circuit .（MMIC） amplifier with high output power in the Ka-band is presented. Using 75mm 0.25μm GaAs PHEMT technology provided by the Hebei Semiconductor Research Institute, this three-stage power amplifier, with a chip size of 19.25mm^2 （3.5mm × 5.5mm）, on 100μm GaAs substrate achieves a linear gain of more than 16dB in the 32.5-35.5GHz frequency range,with an average output power at 1dB gain compression of P1dB = 29. 8dBm and a maximum saturated output power of Psat = 31dBm.
文摘A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency （PAE） of 50% is achieved with an output power of up to 27dBm from this device.
文摘Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier （PA）, a modulator, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output ldB power of 17.6dBm while maintaining a maximum PAE of 35.4%.
文摘A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.
文摘A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.
