The structure,equivalent circuit,noise sources of silicon photodiode are analyzed.In order to improve the measuring linearity,we must choose the silicon photodiode with a large R d,small R s and I 0 and...The structure,equivalent circuit,noise sources of silicon photodiode are analyzed.In order to improve the measuring linearity,we must choose the silicon photodiode with a large R d,small R s and I 0 and under an operation state of output short-circuit.We must let the operation amplifier work in the current-voltage transfer form.Also we analyzed the effects of the input noise voltage,the input noise current,the input offset voltage,the input offset current of the operation amplifier and the noises of the silicon photodiode on the combined circuit of the operation amplifier with the silicon photodiode.Considering these factors,we can design the detective circuit with high response,sensitivity,stability,linearity and SNR .展开更多
A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation...A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.展开更多
文摘The structure,equivalent circuit,noise sources of silicon photodiode are analyzed.In order to improve the measuring linearity,we must choose the silicon photodiode with a large R d,small R s and I 0 and under an operation state of output short-circuit.We must let the operation amplifier work in the current-voltage transfer form.Also we analyzed the effects of the input noise voltage,the input noise current,the input offset voltage,the input offset current of the operation amplifier and the noises of the silicon photodiode on the combined circuit of the operation amplifier with the silicon photodiode.Considering these factors,we can design the detective circuit with high response,sensitivity,stability,linearity and SNR .
基金Project partially supported by the Zhejiang Provincial Nature Science Fund of China (Nos. Y107055 and Y1080546)the Semiconductor Manufacturing International Corp. (SMIC)
文摘A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.
