An appropriate business dispute resolution will ensure that the parties involved would not have to spend too much time and cost to resolve their case. There are two ways to resolve business disputes, through litigatio...An appropriate business dispute resolution will ensure that the parties involved would not have to spend too much time and cost to resolve their case. There are two ways to resolve business disputes, through litigation and non-litigation process. The non-litigation process mainly depends upon the agreement of the parties involved and does not have a formally binding force upon them. Although the non-litigation process is more preferred in resolving business disputes, sometimes it does not completely resolve the issue. A specific business dispute resolution procedure such as the mechanism of small claims court （an informal court） is required. The objectives of the small claims court are to settle cases in prompt and cost-effective manner, and to avoid lengthy and complex formal legal procedures. Although it is still a part of the litigation process, the small claims court applies simplified procedures that are different from those of conventional civil cases. Nonetheless, the judgment of the small claims court has the same legally binding force as that of general court. The small claims court is situated in the District Court, but the examination of cases is different from general procedures and until now the mechanism has not been widely known in Indonesia.展开更多
Growth of semi-polar （1-101）GaN has been attempted on a patterned （001） silicon substrate adopting selective area MOVPE. The growth was initiated on （111） facets of the Si, which had been prepared by anisotropy ...Growth of semi-polar （1-101）GaN has been attempted on a patterned （001） silicon substrate adopting selective area MOVPE. The growth was initiated on （111） facets of the Si, which had been prepared by anisotropy etching in a KOH solution. A uni- form semi-polar layer was achieved by coalescence of stripes. Since the growth was performed on facets, the surface was atomically fiat in AFM surface analyses. By using a high temperature grown A1N nucleation layer, we achieved low threading dislocation density at the top most surface. Moreover, by tilting the c-axis of the GaN on the Si substrate, the effect of the thermal expansion coefficient mismatch was much reduced. As the result, we achieved a crack free （1-101）GaN template on （001）Si. On the thus prepared （1-101）GaN, a GalnN/GaN LED was fabricated, which showed excellent performance with weak quantum confined Stark effect.展开更多
文摘An appropriate business dispute resolution will ensure that the parties involved would not have to spend too much time and cost to resolve their case. There are two ways to resolve business disputes, through litigation and non-litigation process. The non-litigation process mainly depends upon the agreement of the parties involved and does not have a formally binding force upon them. Although the non-litigation process is more preferred in resolving business disputes, sometimes it does not completely resolve the issue. A specific business dispute resolution procedure such as the mechanism of small claims court （an informal court） is required. The objectives of the small claims court are to settle cases in prompt and cost-effective manner, and to avoid lengthy and complex formal legal procedures. Although it is still a part of the litigation process, the small claims court applies simplified procedures that are different from those of conventional civil cases. Nonetheless, the judgment of the small claims court has the same legally binding force as that of general court. The small claims court is situated in the District Court, but the examination of cases is different from general procedures and until now the mechanism has not been widely known in Indonesia.
基金supported by the Grant in Aid for Scientific Research by JSPS and Nagoya University Akasaki Research Center
文摘Growth of semi-polar （1-101）GaN has been attempted on a patterned （001） silicon substrate adopting selective area MOVPE. The growth was initiated on （111） facets of the Si, which had been prepared by anisotropy etching in a KOH solution. A uni- form semi-polar layer was achieved by coalescence of stripes. Since the growth was performed on facets, the surface was atomically fiat in AFM surface analyses. By using a high temperature grown A1N nucleation layer, we achieved low threading dislocation density at the top most surface. Moreover, by tilting the c-axis of the GaN on the Si substrate, the effect of the thermal expansion coefficient mismatch was much reduced. As the result, we achieved a crack free （1-101）GaN template on （001）Si. On the thus prepared （1-101）GaN, a GalnN/GaN LED was fabricated, which showed excellent performance with weak quantum confined Stark effect.
