A three-dimensional finite element simulation was carried out to investigate the effects of tunnel construction on nearby pile foundation.The displacement controlled model (DCM) was used to simulate the tunneling-indu...A three-dimensional finite element simulation was carried out to investigate the effects of tunnel construction on nearby pile foundation.The displacement controlled model (DCM) was used to simulate the tunneling-induced volume loss effects.The numerical model was verified based on the results of a centrifuge test and a set of parametric studies was implemented based on this model.There is good agreement between the trend of the results of the centrifuge test and the present model.The results of parametric studies show that the tunnelling-induced pile internal force and deformation depend mainly on the pile?tunnel distance,the pile length to tunnel depth ratio and the volume loss.Two different zones are separated by a 45° line projected from the tunnel springline.Within the zone of influence,the pile is subjected to tensile force and large settlement;whereas outside the zone of influence,dragload and small settlement are induced.It is also established that the impact of tunnelling on a pile group is substantially smaller as compared with a single pile in the same location with the rear pile in a group,demonstrating a positive pile group effect.展开更多
The traditional method of measuring Doppler Effect is either reflection or dispersiion. This article clarifies that it can also verify the Doppler Effect with the refraction method. We have designed the experimental s...The traditional method of measuring Doppler Effect is either reflection or dispersiion. This article clarifies that it can also verify the Doppler Effect with the refraction method. We have designed the experimental system with the method of optical heterodyne, using the refraction light beam from a prism, and made the experiment. The experimental results are in accordance with the theoretical calculation. It is very useful in some particular case, such as in Negative- Index Materials（NIM）, to verify the Doppler Effect with this method.展开更多
The correspondence analysis will describe elemental association accompanying an indicator samples.This analysis indicates strong mineralization of Ag,As,Pb,Te,Mo,Au,Zn and to a lesser extent S,W,Cu at Glojeh polymetal...The correspondence analysis will describe elemental association accompanying an indicator samples.This analysis indicates strong mineralization of Ag,As,Pb,Te,Mo,Au,Zn and to a lesser extent S,W,Cu at Glojeh polymetallic mineralization,NW Iran.This work proposes a backward elimination approach(BEA)that quantitatively predicts the Au concentration from main effects(X),quadratic terms(X2)and the first order interaction(Xi×Xj)of Ag,Cu,Pb,and Zn by initialization,order reduction and validation of model.BEA is done based on the quadratic model(QM),and it was eliminated to reduced quadratic model(RQM)by removing insignificant predictors.During the QM optimization process,overall convergence trend of R2,R2(adj)and R2(pred)is obvious,corresponding to increase in the R2(pred)and decrease of R2.The RQM consisted of(threshold value,Cu,Ag×Cu,Pb×Zn,and Ag2-Pb2)and(Pb,Ag×Cu,Ag×Pb,Cu×Zn,Pb×Zn,and Ag2)as main predictors of optimized model according to288and679litho-samples in trenches and boreholes,respectively.Due to the strong genetic effects with Au mineralization,Pb,Ag2,and Ag×Pb are important predictors in boreholes RQM,while the threshold value is known as an important predictor in the trenches model.The RQMs R2(pred)equal74.90%and60.62%which are verified by R2equal to73.9%and60.9%in the trenches and boreholes validation group,respectively.展开更多
An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift...An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.展开更多
文摘A three-dimensional finite element simulation was carried out to investigate the effects of tunnel construction on nearby pile foundation.The displacement controlled model (DCM) was used to simulate the tunneling-induced volume loss effects.The numerical model was verified based on the results of a centrifuge test and a set of parametric studies was implemented based on this model.There is good agreement between the trend of the results of the centrifuge test and the present model.The results of parametric studies show that the tunnelling-induced pile internal force and deformation depend mainly on the pile?tunnel distance,the pile length to tunnel depth ratio and the volume loss.Two different zones are separated by a 45° line projected from the tunnel springline.Within the zone of influence,the pile is subjected to tensile force and large settlement;whereas outside the zone of influence,dragload and small settlement are induced.It is also established that the impact of tunnelling on a pile group is substantially smaller as compared with a single pile in the same location with the rear pile in a group,demonstrating a positive pile group effect.
文摘The traditional method of measuring Doppler Effect is either reflection or dispersiion. This article clarifies that it can also verify the Doppler Effect with the refraction method. We have designed the experimental system with the method of optical heterodyne, using the refraction light beam from a prism, and made the experiment. The experimental results are in accordance with the theoretical calculation. It is very useful in some particular case, such as in Negative- Index Materials（NIM）, to verify the Doppler Effect with this method.
基金support of the IMIDRO(Iranian Mines and Mining Industries Development & Renovation Organization) for our research
文摘The correspondence analysis will describe elemental association accompanying an indicator samples.This analysis indicates strong mineralization of Ag,As,Pb,Te,Mo,Au,Zn and to a lesser extent S,W,Cu at Glojeh polymetallic mineralization,NW Iran.This work proposes a backward elimination approach(BEA)that quantitatively predicts the Au concentration from main effects(X),quadratic terms(X2)and the first order interaction(Xi×Xj)of Ag,Cu,Pb,and Zn by initialization,order reduction and validation of model.BEA is done based on the quadratic model(QM),and it was eliminated to reduced quadratic model(RQM)by removing insignificant predictors.During the QM optimization process,overall convergence trend of R2,R2(adj)and R2(pred)is obvious,corresponding to increase in the R2(pred)and decrease of R2.The RQM consisted of(threshold value,Cu,Ag×Cu,Pb×Zn,and Ag2-Pb2)and(Pb,Ag×Cu,Ag×Pb,Cu×Zn,Pb×Zn,and Ag2)as main predictors of optimized model according to288and679litho-samples in trenches and boreholes,respectively.Due to the strong genetic effects with Au mineralization,Pb,Ag2,and Ag×Pb are important predictors in boreholes RQM,while the threshold value is known as an important predictor in the trenches model.The RQMs R2(pred)equal74.90%and60.62%which are verified by R2equal to73.9%and60.9%in the trenches and boreholes validation group,respectively.
基金supported by the National Ministries and Commissions (Grant Nos.51308040203 and 6139801)the Fundamental Research Funds for the Central Universities (Grant Nos.72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2010JQ8008)
文摘An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.
