传统的基于弹跳射线(shooting and bouncing ray,SBR)技术的散射中心提取方法只考虑了理想点模型,但理想点模型无法描述散射中心的频率依赖特性。对此,提出一种基于弹跳射线技术的三维几何绕射理论(geometrical theory of diffraction,G...传统的基于弹跳射线(shooting and bouncing ray,SBR)技术的散射中心提取方法只考虑了理想点模型,但理想点模型无法描述散射中心的频率依赖特性。对此,提出一种基于弹跳射线技术的三维几何绕射理论(geometrical theory of diffraction,GTD)模型构建方法,在通过传统方法获取的理想点模型的基础上,利用射线管数据正向推算散射中心的频率依赖参数并修正其径向位置,实现了高精度三维GTD模型构建。仿真结果表明,点频、单视角下构建的三维GTD模型不仅能准确重构相同条件下的雷达散射截面(radar cross section,RCS),还能实现宽带RCS外推,能够满足目标宽带散射数据高效压缩和快速重构的应用需求。展开更多
Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into accoun...Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%.展开更多
文摘传统的基于弹跳射线(shooting and bouncing ray,SBR)技术的散射中心提取方法只考虑了理想点模型,但理想点模型无法描述散射中心的频率依赖特性。对此,提出一种基于弹跳射线技术的三维几何绕射理论(geometrical theory of diffraction,GTD)模型构建方法,在通过传统方法获取的理想点模型的基础上,利用射线管数据正向推算散射中心的频率依赖参数并修正其径向位置,实现了高精度三维GTD模型构建。仿真结果表明,点频、单视角下构建的三维GTD模型不仅能准确重构相同条件下的雷达散射截面(radar cross section,RCS),还能实现宽带RCS外推,能够满足目标宽带散射数据高效压缩和快速重构的应用需求。
基金Project(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of ChinaProject(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProjects(K5051225014,7214608503)supported by the Fundamental Research Funds for the Central Universities,China
文摘Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%.
