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数字光学信息处理的物理模型和数字光显示产业
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作者 宋菲君 M.Davis J.Horvath 《量子电子学报》 CAS CSCD 北大核心 2004年第5期686-686,共1页
关键词 数字学信息处理 物理模型 数字光显示 数字微反射镜器件
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光谱仪器
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《中国光学》 EI CAS 1996年第6期9-10,共2页
TH744.12 96063568数字显示分光光度计吸光度负值的利用=The useof the negative absorbance on digital spectrophotometer[刊,中]/赵珍义,孙鹤令,陈华(辽宁大学化学系.辽宁,沈阳(110036))//分析仪器.-1995,(2).-29-31应用差示光度法... TH744.12 96063568数字显示分光光度计吸光度负值的利用=The useof the negative absorbance on digital spectrophotometer[刊,中]/赵珍义,孙鹤令,陈华(辽宁大学化学系.辽宁,沈阳(110036))//分析仪器.-1995,(2).-29-31应用差示光度法的原理探讨了利用数字显示分光光度计吸光度负值的理论根据。研究了标准曲线的绘制,误差分布及回收实验。图2表3参5(严寒) 展开更多
关键词 数字显示度计 度负值 分析仪器 理论根据 差示度法 原理探讨 误差分布 标准曲线 大学化学 傅里叶变换红外谱仪
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Improving displayed resolution in convolution reconstruction of digital holograms
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作者 FAN Qi ZHANG Yan-cao WANG Jun DI Jiang-lei 《Optoelectronics Letters》 EI 2006年第4期305-307,311,共4页
In digital holographic microscopy, when the object is placed near the COD, the Fresnel approximation is no longer valid and the convolution approach has to be applied. With this approach,the sampling spacing of the re... In digital holographic microscopy, when the object is placed near the COD, the Fresnel approximation is no longer valid and the convolution approach has to be applied. With this approach,the sampling spacing of the reconstructed image plane is equal to the pixel size of the COD. If the lateral resolution of the reconstructed image is higher than that of the COD,Nyquist sampling criterion is violated and aliasing errors will be introduced. In this Letter,a new method is proposed to solve this problem by investigating convolution reconstruction of digital holograms. By appending enough zeros to the angular spectrum between the two FFT's in convolution reconstruction of digital holograms,the displayed resolution of the reconstructed image can be improved. Experimental results show a good agreement with theoretical analysis. 展开更多
关键词 全息 数字技术 卷积重建 显示技术
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Simulation of Electronic Total-Reflection Effect in a Graphene Junction
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作者 陶伟伟 刘波 +1 位作者 戴乾 汪萨克 《Communications in Theoretical Physics》 SCIE CAS CSCD 2014年第3期391-396,共6页
We investigate theoretically the electron-reflection phenomenon in a graphene n+n junction based on electron optics, where the local potential in the left n + region is higher than that in the right n region. It is ... We investigate theoretically the electron-reflection phenomenon in a graphene n+n junction based on electron optics, where the local potential in the left n + region is higher than that in the right n region. It is demonstrated numerically that electrons emitting from a point source in the n + region will experience total internal reflection through the interface of the junction. The reflection becomes stronger and the transmission becomes weaker with decrease of the local potential in the right graphene ribbon. It is also found that when a nonideal interface is considered in the junction, the electron-reflection effect is enhanced due to interracial backseattering. 展开更多
关键词 electron optics Klein tunneling total reflection effect
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