Active fault creep slip induces deformation of rock mass buried deeply in fault zones that significantly affect the operational safety of long linear projects passing through it.Displacement distribution patterns of r...Active fault creep slip induces deformation of rock mass buried deeply in fault zones that significantly affect the operational safety of long linear projects passing through it.Displacement distribution patterns of rock masses in active fault zones which have been investigated previously are the key design basis for such projects.Therefore,a discrete element numerical model with different fault types,slip time,dip angles,and complex geological features was established,and then the creep slip for normal,reverse,and strike-slip faults were simulated to analyze the displacement distribution in the fault rock mass.A disk rotation test system and the corresponding laboratory test method were developed for simulating rock mass displacement induced by creep slippage of faults.A series of rotation tests for softand hard-layered specimens under combined compression and torsional stress were conducted to verify the numerical results and analyze the factors influencing the displacement distribution.An S-shaped displacement distribution independent of fault dip angle was identified corresponding to reverse,normal,and strike-slip faults.The results indicated that the higher the degree of horizontal extrusion,the softer the rock mass at the fault core,and the higher the degree of displacement concentration in the fault core;about 70%of the creep slip displacement occurs within this zone under 100 years of creep slippage.展开更多
Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor instruments become more sophisticated. Spin coating is...Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor instruments become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped photoresist scarers outward and reattaches on the film surface. A catch cup is set up outside the wafer in spin coating, and scattered photoresist mist is removed from the wafer edge by the exhaust flow generated at the gap between the wafer edge and the catch cup. In the dry process of a spin coating, it is a serious concern that the film thickness increases near the wafer edge in the case of low rotating speed. The purpose of this study is to make clear the effect of the catch cup geometry on the 3D boundary layer flow over the wafer surface and the drying rate of liquid film.展开更多
Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor become more sophisticated. Spin coating is usually use...Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped resist scatters outward and reattaches to the film surface. So, the scattered resist is removed by the exhaust flow generated at the gap between the wafer edge and the catch cup. It is seriously concerned that the stripes called Ekman spiral vortices appears on the disk in the case of high rotating speed and the film thickness increases near the wafer edge in the case of low rotating speed, because it prevent the formation of uniform film. The purpose of this study is to make clear the generation mechanism of Ekman spiral vortices and the influence of exhaust flow on it Moreover the influence of the catch cup geometry on the wafer surface boundary layer flow is investigated.展开更多
基金Project(U1865203)supported by the Key Projects of the Yalong River Joint Fund of the National Natural Science Foundation of ChinaProjects(41941018,51879135)supported by the National Natural Science Foundation of China。
文摘Active fault creep slip induces deformation of rock mass buried deeply in fault zones that significantly affect the operational safety of long linear projects passing through it.Displacement distribution patterns of rock masses in active fault zones which have been investigated previously are the key design basis for such projects.Therefore,a discrete element numerical model with different fault types,slip time,dip angles,and complex geological features was established,and then the creep slip for normal,reverse,and strike-slip faults were simulated to analyze the displacement distribution in the fault rock mass.A disk rotation test system and the corresponding laboratory test method were developed for simulating rock mass displacement induced by creep slippage of faults.A series of rotation tests for softand hard-layered specimens under combined compression and torsional stress were conducted to verify the numerical results and analyze the factors influencing the displacement distribution.An S-shaped displacement distribution independent of fault dip angle was identified corresponding to reverse,normal,and strike-slip faults.The results indicated that the higher the degree of horizontal extrusion,the softer the rock mass at the fault core,and the higher the degree of displacement concentration in the fault core;about 70%of the creep slip displacement occurs within this zone under 100 years of creep slippage.
基金the 21~(st)Century COE program of Pulse Power Science of Kumamoto University
文摘Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor instruments become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped photoresist scarers outward and reattaches on the film surface. A catch cup is set up outside the wafer in spin coating, and scattered photoresist mist is removed from the wafer edge by the exhaust flow generated at the gap between the wafer edge and the catch cup. In the dry process of a spin coating, it is a serious concern that the film thickness increases near the wafer edge in the case of low rotating speed. The purpose of this study is to make clear the effect of the catch cup geometry on the 3D boundary layer flow over the wafer surface and the drying rate of liquid film.
文摘Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped resist scatters outward and reattaches to the film surface. So, the scattered resist is removed by the exhaust flow generated at the gap between the wafer edge and the catch cup. It is seriously concerned that the stripes called Ekman spiral vortices appears on the disk in the case of high rotating speed and the film thickness increases near the wafer edge in the case of low rotating speed, because it prevent the formation of uniform film. The purpose of this study is to make clear the generation mechanism of Ekman spiral vortices and the influence of exhaust flow on it Moreover the influence of the catch cup geometry on the wafer surface boundary layer flow is investigated.
