A pyrazoline-containing starburst molecule, 4,4’,4"-tris[(1,3-diphenyl-4,5-dihydro-1H- pyrazol)-5-yl]-triphenylamine (Tris-5-DPP), was synthesized in a facile way, which can form amorphous thin films with glass ...A pyrazoline-containing starburst molecule, 4,4’,4"-tris[(1,3-diphenyl-4,5-dihydro-1H- pyrazol)-5-yl]-triphenylamine (Tris-5-DPP), was synthesized in a facile way, which can form amorphous thin films with glass transition temperature as high as 136 °C.展开更多
In this study, Bismuth doped Titanium dioxide thin films were deposited on glass substrates by a pulse laser deposition using laser. The effect of annealing temperature on the structural and electrical properties was ...In this study, Bismuth doped Titanium dioxide thin films were deposited on glass substrates by a pulse laser deposition using laser. The effect of annealing temperature on the structural and electrical properties was investigated. X-ray diffraction pattern for pure and doped titanium dioxide films with different doping different ratio with Bi show that these films have amorphous structure oanvert to polycrystalline structure with annealing and doping and have a good identically with standard peaks for Anatase and Rutile phases. The orientation was at specific direction for Rutile. The crystalline of films increases by the increase of doping ratio. The crystalline increased with annealing temperature. Annealed films at different annealing temperatures have been studied. The results show that these films have two activation energies and by increasing the doping ratio, the activation energies and the conductivity increase. Both the annealing and composition effects on Hall constant, density of electron carders and Hall mobility are studied. Hall Effect measurements show that all films have n- type charge conductivity and the concentration increases while the mobility decreases with doping and annealing.展开更多
The laser equipment is one of the key equipment in the production line of the solar energy. In this article, the author de-scribes the application of the laser equipment in the production line of the amorphous silicon...The laser equipment is one of the key equipment in the production line of the solar energy. In this article, the author de-scribes the application of the laser equipment in the production line of the amorphous silicon film solar cells, and points out that the stable and exactitude is the key direction of the future development of the laser scribing equipment.展开更多
The synthesis of large area, homogenous, single layer graphene on cobalt （Co） and nickel （Ni） is reported. The process involves vacuum annealing of sputtered amorphous carbon （a-C） deposited on Co/sapphire or Ni...The synthesis of large area, homogenous, single layer graphene on cobalt （Co） and nickel （Ni） is reported. The process involves vacuum annealing of sputtered amorphous carbon （a-C） deposited on Co/sapphire or Ni/sapphire substrates. The improved crystallinity of the metal film, assisted by the sapphire substrate, proves to be the key to the quality of as-grown graphene film. The crystallinity of the Co and Ni metal films was improved by sputtering the metal at elevated temperature as was verified by X-ray diffraction （XRD）. After sputtering of a-C and annealing, large area, single layer graphene that occupies almost the entire area of the substrate was produced. With this method, 100 mm2-area single layer graphene can be synthesized and is limited only by the substrate and vacuum chamber size. The homogeneity of the graphene film is not dependent on the cooling rate, in contrast to syntheses using polycrystalline metal films and conventional chemical vapor deposition （CVD） growth. Our facile method of producing single layer graphene on Co and Ni metal films should lead to large scale graphene-based applications.展开更多
基金This work was financially supported by NNSFC and the Ministry of Science and Technology of China(Grant No.20272065 and G2000028204).
文摘A pyrazoline-containing starburst molecule, 4,4’,4"-tris[(1,3-diphenyl-4,5-dihydro-1H- pyrazol)-5-yl]-triphenylamine (Tris-5-DPP), was synthesized in a facile way, which can form amorphous thin films with glass transition temperature as high as 136 °C.
文摘In this study, Bismuth doped Titanium dioxide thin films were deposited on glass substrates by a pulse laser deposition using laser. The effect of annealing temperature on the structural and electrical properties was investigated. X-ray diffraction pattern for pure and doped titanium dioxide films with different doping different ratio with Bi show that these films have amorphous structure oanvert to polycrystalline structure with annealing and doping and have a good identically with standard peaks for Anatase and Rutile phases. The orientation was at specific direction for Rutile. The crystalline of films increases by the increase of doping ratio. The crystalline increased with annealing temperature. Annealed films at different annealing temperatures have been studied. The results show that these films have two activation energies and by increasing the doping ratio, the activation energies and the conductivity increase. Both the annealing and composition effects on Hall constant, density of electron carders and Hall mobility are studied. Hall Effect measurements show that all films have n- type charge conductivity and the concentration increases while the mobility decreases with doping and annealing.
文摘The laser equipment is one of the key equipment in the production line of the solar energy. In this article, the author de-scribes the application of the laser equipment in the production line of the amorphous silicon film solar cells, and points out that the stable and exactitude is the key direction of the future development of the laser scribing equipment.
文摘The synthesis of large area, homogenous, single layer graphene on cobalt （Co） and nickel （Ni） is reported. The process involves vacuum annealing of sputtered amorphous carbon （a-C） deposited on Co/sapphire or Ni/sapphire substrates. The improved crystallinity of the metal film, assisted by the sapphire substrate, proves to be the key to the quality of as-grown graphene film. The crystallinity of the Co and Ni metal films was improved by sputtering the metal at elevated temperature as was verified by X-ray diffraction （XRD）. After sputtering of a-C and annealing, large area, single layer graphene that occupies almost the entire area of the substrate was produced. With this method, 100 mm2-area single layer graphene can be synthesized and is limited only by the substrate and vacuum chamber size. The homogeneity of the graphene film is not dependent on the cooling rate, in contrast to syntheses using polycrystalline metal films and conventional chemical vapor deposition （CVD） growth. Our facile method of producing single layer graphene on Co and Ni metal films should lead to large scale graphene-based applications.
