Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, whil...Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.展开更多
It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous(L-a) Ge2Sb2Te5(GST) alloy due to the difficulties of collecting diffraction data from high purity speci...It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous(L-a) Ge2Sb2Te5(GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper,by fabricating GST thin films on different substrates,we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope(TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions(PDF) can be achieved on single dots of L-a GST via selected area electron diffraction(SAED) . This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.展开更多
Photofunctional materials with room-temperature phosphorescence（RTP）commonly appeared in expensive metal-coordination complexes and rare-earth-based compounds.Recently,the metal-free organic RTP materials have been ...Photofunctional materials with room-temperature phosphorescence（RTP）commonly appeared in expensive metal-coordination complexes and rare-earth-based compounds.Recently,the metal-free organic RTP materials have been paid growing attention from scientific community because of the ease of molecular design,low cost as well as potential applications in molecular switches,chemical sensors and biological imaging.To date,efficient RTP materials with high quantum yield are still very limited due to the T_1-S_0 spinforbidden process and weak spin-orbital coupling.Current mechanism based on crystallization-induced or aggregationinduced phosphorescence may serve as an effective way to enhance the RTP[1,2];展开更多
文摘Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.
基金supported by the National Basic Research Program of China (Grant Nos.2007CB935400 and 2009CB623700)
文摘It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous(L-a) Ge2Sb2Te5(GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper,by fabricating GST thin films on different substrates,we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope(TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions(PDF) can be achieved on single dots of L-a GST via selected area electron diffraction(SAED) . This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.
文摘Photofunctional materials with room-temperature phosphorescence（RTP）commonly appeared in expensive metal-coordination complexes and rare-earth-based compounds.Recently,the metal-free organic RTP materials have been paid growing attention from scientific community because of the ease of molecular design,low cost as well as potential applications in molecular switches,chemical sensors and biological imaging.To date,efficient RTP materials with high quantum yield are still very limited due to the T_1-S_0 spinforbidden process and weak spin-orbital coupling.Current mechanism based on crystallization-induced or aggregationinduced phosphorescence may serve as an effective way to enhance the RTP[1,2];
