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New interpretation of experimental data on Si-As alloy solidification with planar interface 被引量:1
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作者 S.L.SOBOLEV 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第8期2797-2806,共10页
An analytical model was developed to describe Si?As alloy solidification in the whole range of measured interface velocity. It is demonstrated that at low interface velocity, the solidification occurs in the initial ... An analytical model was developed to describe Si?As alloy solidification in the whole range of measured interface velocity. It is demonstrated that at low interface velocity, the solidification occurs in the initial transient regime. The model leads to good comparison with the experimental data taking both local nonequilibrium effects at high interface velocity and steady state effects at low interface velocity into account. The local nonequilibrium diffusion effects shrink the initial transient period and lead to diffusionless solidification at high interface velocity. 展开更多
关键词 alloy solidification initial transient local-nonequilibrium diffusion hyperbolic diffusion equation si-As alloys diffusionless solidification complete solute trapping
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硅/玻璃基板互连和无源元件的动向
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作者 蔡积庆(译) 《印制电路信息》 2013年第2期53-58,共6页
概述了硅玻璃互连板和硅系集成无源元件(IPD)的动向。无源元件制造商的PCB嵌入用硅系芯片元件已经问世。硅基板上的微细薄膜线路和薄膜元件实现无硅化。
关键词 硅玻璃互连板 集成无源元件(IPD) si系芯片元件 无si化
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