[Objective] The aim was to analyze characters of solar energy in photo- voltaic power stations in Shandong Province. [Method] The models of total solar radiation and scattered radiation were determined, and solar ener...[Objective] The aim was to analyze characters of solar energy in photo- voltaic power stations in Shandong Province. [Method] The models of total solar radiation and scattered radiation were determined, and solar energy resources in pho-tovoltaic power stations were evaluated based on illumination in horizontal plane and cloud data in 123 counties or cities and observed information in Jinan, Fushan and Juxian in 1988-2008. [Result] Solar energy in northern regions in Shandong proved most abundant, which is suitable for photovoltaic power generation; the optimal angle of tilt of photovoltaic array was at 35°, decreasing by 2°-3° compared with local latitude. Total solar radiation received by the slope with optimal angle of tilt exceeded 1 600 kw.h/（m2.a）, increasing by 16% compared with horizontal planes. The maximal irradiance concluded by WRF in different regions tended to be volatile in 1 020-1 060 W/m2. [Conclusion] The research provides references for construction of photovoltaic power stations in Shandong Province.展开更多
The growth, fabrication, and characterization of a solar-blind A1GaN-based p-i-n back-illuminated photodetector with a high temperature A1N template are reported for the first time. The photodetector was fabricated fr...The growth, fabrication, and characterization of a solar-blind A1GaN-based p-i-n back-illuminated photodetector with a high temperature A1N template are reported for the first time. The photodetector was fabricated from multilayer AIx Gal-xN films grown by MOCVD on double-polished c-plane （0001） sapphire substrates. Crack free, high A1 content （0.7） A1GaN multilayer structure,designed for the solar-blind p-i-n back-illuminated photodetector,was grown on a high temperature A1N template without a nuclear layer. The high quality of the epitaxial layers is demonstrated by in-situ optical reflectance monitoring curve, triple-axis X-ray diffraction, and atomic-force microscope. At a 1.8V bias, the processed p-i-n photodetector exhibits a solar-blind photoresponse with a maximum responsivity of 0. 0864A/W at 270nm. The photodetector exhibits a forward turn-on voltage at around 3.5V and a reverse breakdown voltage above 20V, and the leakage current is below 20pA for 2V reverse bias.展开更多
基金Supported by Shandong Meteorological Bureau Key Project (2010sdqxj105)~~
文摘[Objective] The aim was to analyze characters of solar energy in photo- voltaic power stations in Shandong Province. [Method] The models of total solar radiation and scattered radiation were determined, and solar energy resources in pho-tovoltaic power stations were evaluated based on illumination in horizontal plane and cloud data in 123 counties or cities and observed information in Jinan, Fushan and Juxian in 1988-2008. [Result] Solar energy in northern regions in Shandong proved most abundant, which is suitable for photovoltaic power generation; the optimal angle of tilt of photovoltaic array was at 35°, decreasing by 2°-3° compared with local latitude. Total solar radiation received by the slope with optimal angle of tilt exceeded 1 600 kw.h/（m2.a）, increasing by 16% compared with horizontal planes. The maximal irradiance concluded by WRF in different regions tended to be volatile in 1 020-1 060 W/m2. [Conclusion] The research provides references for construction of photovoltaic power stations in Shandong Province.
文摘The growth, fabrication, and characterization of a solar-blind A1GaN-based p-i-n back-illuminated photodetector with a high temperature A1N template are reported for the first time. The photodetector was fabricated from multilayer AIx Gal-xN films grown by MOCVD on double-polished c-plane （0001） sapphire substrates. Crack free, high A1 content （0.7） A1GaN multilayer structure,designed for the solar-blind p-i-n back-illuminated photodetector,was grown on a high temperature A1N template without a nuclear layer. The high quality of the epitaxial layers is demonstrated by in-situ optical reflectance monitoring curve, triple-axis X-ray diffraction, and atomic-force microscope. At a 1.8V bias, the processed p-i-n photodetector exhibits a solar-blind photoresponse with a maximum responsivity of 0. 0864A/W at 270nm. The photodetector exhibits a forward turn-on voltage at around 3.5V and a reverse breakdown voltage above 20V, and the leakage current is below 20pA for 2V reverse bias.
