明景泰帝易储事件考——兼论于谦失语的历史评价

本文把景泰帝易储事件到明英宗夺门之变联系成一个有机的整体,结合景泰帝登基后易储所遇到的尴尬,重臣于谦在易储事件中的失语态度及后人的评论,把整个事件放置在明初的整个社会氛围中,即理学所控制的社会思想和秩序下来分析夺门之变发生的必然和偶然,探究这种态度背后的深层次的社会思想内因。

汉武帝与“巫蛊之祸”

针对西汉频繁出现的以“巫蛊”杀人的事件,本文力图透过事情的表象,以最典型的西汉武帝时的“巫蛊之祸”为例,分析其更深层次的因素。本文从汉武帝的生存环境对他的影响,统治中遇到的一系列难题,易储想法的形成与实施等方面阐述和揭示出,用巫术只是手段,为政治目的服务的手段。

论杨素

杨素既是大隋王朝建国安邦的功臣之首，又是祸国殃民，导致隋王朝灭亡的元凶。由功臣到奸枭，究其原因：一是轻君国重私利；二是隋文帝。

景泰帝行贿换太子

朱元璋为了严惩贪官污吏用心良苦,制定了《大明律》,但后世贪官污吏依然屡禁不止,且愈演愈烈。其中景泰帝行贿百官换太子算是明朝千奇百怪丑闻中的“奇观”了。 偶然的历史机遇使朱祈钰做了皇帝后,便有了新的心病,朱祈钰觉得自己做了皇帝,皇储却不是自己的儿子,心中闷闷不乐。

Data Flow&Transaction Mode Classification and An Explorative Estimation on Data Storage&Transaction Volume

The public has shown great interest in the data factor and data transactions,but the current attention is overly focused on personal behavioral data and transactions happening at Data Exchanges.To deliver a complete picture of data flaw and transaction,this paper presents a systematic overview of the flow and transaction of personal,corporate and public data on the basis of data factor classification from various perspectives.By utilizing various sources of information,this paper estimates the volume of data generation&storage and the volume&trend of data market transactions for major economies in the world with the following findings:(i)Data classification is diverse due to a broad variety of applying scenarios,and data transaction and profit distribution are complex due to heterogenous entities,ownerships,information density and other attributes of different data types.(ii)Global data transaction has presented with the characteristics of productization,servitization and platform-based mode.(iii)For major economies,there is a commonly observed disequilibrium between data generation scale and storage scale,which is particularly striking for China.(i^v)The global data market is in a nascent stage of rapid development with a transaction volume of about 100 billion US dollars,and China s data market is even more underdeveloped and only accounts for some 10%of the world total.All sectors of the society should be flly aware of the diversity and complexity of data factor classification and data transactions,as well as the arduous and long-term nature of developing and improving relevant institutional systems.Adapting to such features,efforts should be made to improve data classification,enhance computing infrastructure development,foster professional data transaction and development institutions,and perfect the data governance system.

A Low Power Non-Volatile LR-WPAN Baseband Processor with Wake-Up Identification Receiver

The paper proposes a low power non-volatile baseband processor with wake-up identification(WUI) receiver for LR-WPAN transceiver.It consists of WUI receiver,main receiver,transmitter,non-volatile memory(NVM) and power management module.The main receiver adopts a unified simplified synchronization method and channel codec with proactive Reed-Solomon Bypass technique,which increases the robustness and energy efficiency of receiver.The WUI receiver specifies the communication node and wakes up the transceiver to reduce average power consumption of the transceiver.The embedded NVM can backup/restore the states information of processor that avoids the loss of the state information caused by power failure and reduces the unnecessary power of repetitive computation when the processor is waked up from power down mode.The baseband processor is designed and verified on a FPGA board.The simulated power consumption of processor is 5.1uW for transmitting and 28.2μW for receiving.The WUI receiver technique reduces the average power consumption of transceiver remarkably.If the transceiver operates 30 seconds in every 15 minutes,the average power consumption of the transceiver can be reduced by two orders of magnitude.The NVM avoids the loss of the state information caused by power failure and energy waste caused by repetitive computation.

Variations of Terrestrial Water Storage in the Yangtze River Basin under Climate Change Scenarios

In this study, the water balance-based Precipitation-Evapotranspiration-Runoff (PER) method combined with the land surface model Variable Infiltration Capacity (VIC) was used to estimate the spatiotemporal variations of terrestrial water storage (TWS) for two periods, 1982-2005 (baseline) and 2071-2100, under future climate scenarios A2 and B2 in the Yangtze River basin. The results show that the estimated TWS during the baseline period and under the two future climate scenarios have similar seasonal amplitudes of 60-70 mm. The higher values of TWS appear in June during the baseline period and under the B2 scenario, whereas the TWS under A2 shows two peaks in response to the related precipitation pattern. It also shows that the TWS is recharged from February to June during the baseline period, but it is replenished from March to June under the A2 and B2 scenarios. An analysis of the standard derivation of seasonal and interannual TWS time series under the three scenarios demonstrates that the seasonal TWS of the southeastern part of the Yangtze River basin varies remarkably and that the southeastern and central parts of the basin have higher variations in interannual TWS. With respect to the first mode of the Empirical Orthogonal Function (EOF), the inverse-phase change in seasonal TWS mainly appears across the Guizhou-Sichuan-Shaanxi belt, and the entire basin generally represents a synchronous change in interannual TWS. As a whole, the TWS under A2 presents a larger seasonal variation whereas that under B2 displays a greater interannual variation. These results imply that climate change could trigger severe disasters in the southeastern and central parts of the basin.

楚舞 长袖与细腰的终极审美

“翘袖折腰”为楚舞公元前195年的春天,高祖刘邦刚刚平定英布之乱,因为受了箭伤病势沉重,不得不开始考虑帝位承继之事。一日,刘邦在长乐宫中摆下酒宴,命太子刘盈侍从。也许,他的本意是想趁着酒酷耳热之际挑明易储之事。

Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM

Solid electrolyte based-resistive memories have been considered to be a potential candidate for future information technology with applications in non-volatile memory, logic circuits and neuromorphic computing. A conductive filament model has been generally accepted to be the underlying mechanism for the resistive switching. However, the growth dynamics of such conductive filaments is still not fully understood. Here, we explore the controllability of filament growth by correlating observations of the filament growth with the electric field distribution and several other factors. The filament growth behavior has been recorded using in situ transmission electron microscopy. By studying the real- time recorded filament growth behavior and morphologies, we have been able to simulate the electric field distribution in accordance with our observations. Other factors have also been shown to affect the filament growth, such as Joule heating and electrolyte infrastructure. This work provides insight into the controllable growth of conductive filaments and will help guide research into further functionalities of nanoionic resistive memories.

Fine-grained checkpoint based on non-volatile memory

New non-volatile memory （e.g., phase-change memory） provides fast access, large capacity, byteaddressability, and non-volatility features. These features, fast-byte-persistency, will bring new opportunities to fault tolerance. We propose a fine-grained checkpoint based on non-volatile memory. We extend the current virtual memory manager to manage non-volatile memory, and design a persistent heap with support for fast allocation and checkpointing of persistent objects. To achieve a fine-grained checkpoint, we scatter objects across virtual pages and rely on hardware page-protection to monitor the modifications. In our system, two objects in different virtual pages may reside on the same physical page. Modifying one object would not interfere with the other object. This allows us to monitor and checkpoint objects smaller than 4096 bytes in a fine-grained way. Compared with previous page-grained based checkpoint mechanisms, our new checkpoint method can greatly reduce the data copied at checkpoint time and better leverage the limited bandwidth of non-volatile memory.

Iron-doping induced multiferroic in two-dimensional In2Se3

Multiferroic materials exhibit tremendous potentials in novel magnetoelectric devices such as high-density non-volatile storage.Herein,we report the coexistence of ferroelectricity and ferromagnetism in two-dimensional Fedoped In2Se3(Fe0.16In1.84Se3,FIS).The Fe atoms were doped at the In atom sites and the Fe content is^3.22%according to the experiments.Our first-principles calculation based on the density-functional theory predicts a magnetic moment of 5μB per Fe atom when Fe substitutes In sites in In2Se3.The theoretical prediction was further confirmed experimentally by magnetic measurement.The results indicate that pure In2Se3 is diamagnetic,whereas FIS exhibits ferromagnetic behavior with a parallel anisotropy at 2 K and a Curie temperature of^8 K.Furthermore,the sample maintains stable room-temperature ferroelectricity in piezoresponse force microscopy(PFM)measurement after the introduction of Fe atom into the ferroelectric In2Se3 nanoflakes.The findings indicate that the layered Fe0.16In1.84Se3 materials have potential in future nanoelectronic,magnetic,and optoelectronic applications.

Recent development of studies on the mechanism of resistive memories in several metal oxides

Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performances of those resistive devices are approaching the realistic levels for production.In this paper,we review the progress of valence change type memories,including relevant work reported by our group.Both electrode engineering and in-situ transmission electron microscopy(TEM)high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect.The understanding of resistive memory mechanism is significantly important for device applications.

Electron configurations at 3d orbital of metal ion determining charge transition process in memory devices

Functional polymeric materials with electrical bi-stable states possess significant potential for high-density data storage due to their nanoscale memory site,threedimensional-stacking ability and intrinsic flexibility.Aromatic polyimides bearing donor-acceptor(D-A)skeleton could form the charge transfer complex(CTC)under an electrical field,leading to their feasibility as memory materials.Three novel porphyrinated polyimides DATPP-DSDA,Zn-DATPP-DSDA and Mn-DATPP-DSDA were designed and synthesized for information memory applications.Metal ions with different electron configurations at 3 d orbital have a determining influence on memory behaviors of polyimides:nonvolatile write-once-read-many-times memory(WORM)for DATPP-DSDA,volatile static random access memory(SRAM)for Zn-DATPP-DSDA,but no memory performance for Mn-DATPP-DSDA.By comparing the contribution of orbital transition and hole-electron distribution of chargetransfer excited states,roles of metal ions in regulating memory types were discussed.Molecular simulation results indicate that the Zn ion could play a bridge role in paving the route for excited electrons from a D to an A,while a trap role for the Mn ion in hindering this process.This study proves the feasibility of the strategy for modulating the memory behaviors of porphyrinated polyimides by varying the central metal ion and provides the exact effects of various metal ions on regulating charge transfer processes.

Ultraviolet mem-sensors： Flexible anisotropic composites featuring giant photocurrent enhancement

By using two separate components, mem-sensing devices can be fabricated combining the sensitivity of a transducer with non-volatile memory. Here, we discuss how a mem-sensor can be fabricated using a single material with built- in sensing andmemory capabilities, based on ZnO microwires （MWs） embedded in a photocurable resin and processed from liquid by vertically aligning the MWs across the polymeric matrix using dielectrophoresis. This results in an ultraviolet （UV） photodetector, a device telecommunication, health, and defense, that is widely applied in fields such as and has so far implemented using bulk inorganic semiconductors. However, inorganic detectors suffer from very high production costs, brittleness, huge equipment requirements, and low responsivity. Here, we propose for the first time aneasy processable, reproducible, and low- cost hybrid UV mem-sensor. Composites with aligned ZnO MWs produce giant photocurrentscompared to the same composites with randomly distributed MWs. In particular, we efficiently exploit a mere-response where the photocurrent carries memory of the last electronic state experienced by the device when under testing. Furthermore, we demonstrate the non-equivalence of different wave profiles used during thedielectrophoresis： a pulsed wave is able to induce order in both the axis and the orientation of the MWs, whereas a sine wave only affects the orientation.

Resistive-switching tunability with size-dependent all-inorganic zero-dimensional tetrahedrite quantum dots

All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.