A ceramic superconductor compound with composition YBa2（C u3）1-xA gxO6.5x＋δhas been prepared experimentally by solid state reaction from principal roots of high purity materials like Y203, BaO, CuO and Ag20. The s...A ceramic superconductor compound with composition YBa2（C u3）1-xA gxO6.5x＋δhas been prepared experimentally by solid state reaction from principal roots of high purity materials like Y203, BaO, CuO and Ag20. The study was concentrated on the effect of partial substitution of Ag with respect to Cu atoms by the ratios （x = 0, 1, 0.2, 0.3, 0.4 and 0.5） through different analysis and measurements. X-ray diffraction （XRD）, Scanning Electron Microscope （SEM） and Resistivity measurement is play an important role to show the improvement on high superconducting phase. It was found that the best substituted value of （x = 0.5） investigated a favor value of Tc equal nearly to （123 K）, due to more excess of Ag atoms in the structure. X-ray diffraction showed an orthorhombic structure related to high-To phase with high stability through diminishing some peaks related to low temperature superconducting phase, that was related to presence of multiphase derivative from YBCO-phase. SEM pictures give us more details on the surface morphology, grain and grain boundaries, it gives an indication on successful of sintering process, the last one is very important in forming superconducting phase.展开更多
We have studied erbium germanosilicide (ErSiGe) Ohmic contacts on n-type Si_(1-x)Ge_x substrates with differing Ge concentrations (0≤x≤0.3).Thin layers of Ti (20 nm)/Er (20 nm) were deposited on Si_(1-x)Ge_x substra...We have studied erbium germanosilicide (ErSiGe) Ohmic contacts on n-type Si_(1-x)Ge_x substrates with differing Ge concentrations (0≤x≤0.3).Thin layers of Ti (20 nm)/Er (20 nm) were deposited on Si_(1-x)Ge_x substrates and then post-annealed at 600°C for 60 s to form a stable ErSiGe film.The structures of the ErSiGe films and ErSiGe/Si_(1-x)Ge_x interfaces were characterized by Transmission Electron Microscopy measurements (TEM).The TEM images showed that the thicknesses of ErSiGe films and the Si_(1-x)Ge_x substrates were about 60 and 50 nm,respectively.The ErSiGe/Si_(1-x)Ge_x structure had a smooth interface.Moreover,no agglomeration or Ge segregation was observed.The contact resistivity of the ErSiGe/Si_(1-x)Ge_x structures was measured by the specially designed four-terminal Kelvin structures.When the Ge concentration of Si_(1-x)Ge_x substrates increased from 10% to 30%,the specific contact resistivity (c) slightly decreased from 9.0×10 7 ·cm 2 to 7.4×10 7 ·cm 2,indicating that the Ge concentration is not the main effect on the c of the ErSiGe/Si_(1-x)Ge_x Ohmic contacts.展开更多
文摘A ceramic superconductor compound with composition YBa2（C u3）1-xA gxO6.5x＋δhas been prepared experimentally by solid state reaction from principal roots of high purity materials like Y203, BaO, CuO and Ag20. The study was concentrated on the effect of partial substitution of Ag with respect to Cu atoms by the ratios （x = 0, 1, 0.2, 0.3, 0.4 and 0.5） through different analysis and measurements. X-ray diffraction （XRD）, Scanning Electron Microscope （SEM） and Resistivity measurement is play an important role to show the improvement on high superconducting phase. It was found that the best substituted value of （x = 0.5） investigated a favor value of Tc equal nearly to （123 K）, due to more excess of Ag atoms in the structure. X-ray diffraction showed an orthorhombic structure related to high-To phase with high stability through diminishing some peaks related to low temperature superconducting phase, that was related to presence of multiphase derivative from YBCO-phase. SEM pictures give us more details on the surface morphology, grain and grain boundaries, it gives an indication on successful of sintering process, the last one is very important in forming superconducting phase.
文摘We have studied erbium germanosilicide (ErSiGe) Ohmic contacts on n-type Si_(1-x)Ge_x substrates with differing Ge concentrations (0≤x≤0.3).Thin layers of Ti (20 nm)/Er (20 nm) were deposited on Si_(1-x)Ge_x substrates and then post-annealed at 600°C for 60 s to form a stable ErSiGe film.The structures of the ErSiGe films and ErSiGe/Si_(1-x)Ge_x interfaces were characterized by Transmission Electron Microscopy measurements (TEM).The TEM images showed that the thicknesses of ErSiGe films and the Si_(1-x)Ge_x substrates were about 60 and 50 nm,respectively.The ErSiGe/Si_(1-x)Ge_x structure had a smooth interface.Moreover,no agglomeration or Ge segregation was observed.The contact resistivity of the ErSiGe/Si_(1-x)Ge_x structures was measured by the specially designed four-terminal Kelvin structures.When the Ge concentration of Si_(1-x)Ge_x substrates increased from 10% to 30%,the specific contact resistivity (c) slightly decreased from 9.0×10 7 ·cm 2 to 7.4×10 7 ·cm 2,indicating that the Ge concentration is not the main effect on the c of the ErSiGe/Si_(1-x)Ge_x Ohmic contacts.
