Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of H...Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.展开更多
Two-dimensional(2 D) transition metal dichalcogenides(TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and ...Two-dimensional(2 D) transition metal dichalcogenides(TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and optical properties. Controlling the thickness and doping of 2 D TMDCs are crucial toward their future applications. Here, we report an effective HAu Cl4 treatment method and achieve simultaneous thinning and doping of various TMDCs in one step. We find that the HAu Cl4 treatment not only thins thick Mo S2 flakes into few layers or even monolayers, but also simultaneously tunes Mo S2 into p-type. The effects of various parameters in the process have been studied systematically,and an Au intercalation assisted thinning and doping mechanism is proposed. Importantly, this method also works for other typical TMDCs, including WS2, Mo Se2 and WSe2,showing good universality. Electrical transport measurements of field-effect transistors(FETs) based on Mo S2 flakes show a big increase of On/Off current ratios(from 102 to 107) after the HAu Cl4 treatment. Meanwhile, the subthreshold voltages of the Mo S2 FETs shift from-60 to +27 V after the HAu Cl4 treatment, with a p-type doping behavior. This study provides an effective and simple method to control the thickness and doping properties of 2 D TMDCs, paving a way for their applications in high performance electronics and optoelectronics.展开更多
We analyze thickness-stretch vibrations of a plate of hexagonal crystal carrying an array of micro-rods with their bottoms fixed to the top surface of the plate.The rods undergo longitudinal vibrations when the crysta...We analyze thickness-stretch vibrations of a plate of hexagonal crystal carrying an array of micro-rods with their bottoms fixed to the top surface of the plate.The rods undergo longitudinal vibrations when the crystal plate is in thickness-stretch motion.The plate is modeled by the theory of anisotropic elasticity.The rods are modeled by the one-dimensional structural theory for extensional vibration of rods.A frequency equation is obtained and solved using perturbation method.The effect of the rod array on the resonant frequencies of the crystal plate is examined.The results are potentially useful for using thickness-stretch modes of crystal plates to measure the mechanical properties of microrod arrays.展开更多
SiO_2/Si substrate has been widely used to support two-dimensional （2-D） crystal flakes grown by chemical vapor deposition or prepared by micromechanical cleavage. The visibility of 2-D flakes is very sensitive to t...SiO_2/Si substrate has been widely used to support two-dimensional （2-D） crystal flakes grown by chemical vapor deposition or prepared by micromechanical cleavage. The visibility of 2-D flakes is very sensitive to the thickness of the SiO_2 layer （hsiO_2）, which can not be determined precisely after the deposit of 2-D flakes. Here, we demonstrated a simple, fast and nondestructive tech- nique to precisely determine hsiO_2 of SiO_2 films on Si substrate only by optical contrast measurement with a typical micro-Raman confocal system. Because of its small lateral resolution down to the micrometer scale, this tech- nique can be used to access hsiO_2 on SiO_2/Si substrate that has been partially covered by 2-D crystal flakes, and then further determine the layer number of the 2-D crystal flakes. This technique can be extended to other dielectric multilayer substrates and the layer-number determination of 2-D crystal flakes on those substrates.展开更多
The "solidified liquid layer" model has been examined using a quartz crystal microbalance(QCM) with a polymeric matrix.The model is shown to give a reasonable explanation for the following experimental obser...The "solidified liquid layer" model has been examined using a quartz crystal microbalance(QCM) with a polymeric matrix.The model is shown to give a reasonable explanation for the following experimental observations:(i) The opposite response of the QCM and surface plasmon resonance(SPR) for the activation process;(ii) the marked difference in the responses for IgG/anti-IgG interaction between QCM and SPR.Theoretical analysis and experimental results indicated that QCM is sensitive to the thickness change of the "solidified liquid layer" but not the mass of captured biomolecules(i.e.,the immobilized mass),implying caution must be taken in interpreting QCM results.展开更多
Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately,...Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.展开更多
In this paper,the pentacene-based organic field-effect transistors(OFETs)with poly(methyl methacrylate)(PMMA)as gate dielectrics were fabricated,and the effects of gate dielectric thickness and semiconductor thickness...In this paper,the pentacene-based organic field-effect transistors(OFETs)with poly(methyl methacrylate)(PMMA)as gate dielectrics were fabricated,and the effects of gate dielectric thickness and semiconductor thickness on the device performance were investigated.The optimal PMMA thickness is in the range of 350–400 nm to sustain a considerable current density and stable performance.The device performance depends on the thicknesses of the active layer non-monotonically,which can be explained by the morphology of the pentacene film and the position of the conducting channel in the active layer.The device with a pentacene thickness of 50 nm shows the best performance,which has a maximum hole mobility of 1.12 cm2/V·s.In addition,the introduction of a thin layer of tris-(8-hydroxyquinolinato)aluminum(Alq3)to the OFETs as a light-emitting material greatly decreases the device performance.展开更多
文摘Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.
基金support from the National Natural Science Foundation of China (51722206 and 11674150)the Youth 1000-Talent Program of China+3 种基金the Economic, Trade and Information Commission of Shenzhen Municipality for the “2017 Graphene Manufacturing Innovation Center Project” (201901171523)Shenzhen Basic Research Project (JCYJ20170307140956657 and JCYJ20160613160524999)Guangdong Innovative and Entrepreneurial Research Team Program (2017ZT07C341 and 2016ZT06D348)the Development and Reform Commission of Shenzhen Municipality for the development of the “Low-Dimensional Materials and Devices” discipline
文摘Two-dimensional(2 D) transition metal dichalcogenides(TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and optical properties. Controlling the thickness and doping of 2 D TMDCs are crucial toward their future applications. Here, we report an effective HAu Cl4 treatment method and achieve simultaneous thinning and doping of various TMDCs in one step. We find that the HAu Cl4 treatment not only thins thick Mo S2 flakes into few layers or even monolayers, but also simultaneously tunes Mo S2 into p-type. The effects of various parameters in the process have been studied systematically,and an Au intercalation assisted thinning and doping mechanism is proposed. Importantly, this method also works for other typical TMDCs, including WS2, Mo Se2 and WSe2,showing good universality. Electrical transport measurements of field-effect transistors(FETs) based on Mo S2 flakes show a big increase of On/Off current ratios(from 102 to 107) after the HAu Cl4 treatment. Meanwhile, the subthreshold voltages of the Mo S2 FETs shift from-60 to +27 V after the HAu Cl4 treatment, with a p-type doping behavior. This study provides an effective and simple method to control the thickness and doping properties of 2 D TMDCs, paving a way for their applications in high performance electronics and optoelectronics.
基金supported by the National Natural Science Foundation of China (Grant No. 10932004)the Industrial Technology Research Program of the City of Ningbo (Grant No. 2007B10052)the WONG K C Magna Fund of Ningbo University
文摘We analyze thickness-stretch vibrations of a plate of hexagonal crystal carrying an array of micro-rods with their bottoms fixed to the top surface of the plate.The rods undergo longitudinal vibrations when the crystal plate is in thickness-stretch motion.The plate is modeled by the theory of anisotropic elasticity.The rods are modeled by the one-dimensional structural theory for extensional vibration of rods.A frequency equation is obtained and solved using perturbation method.The effect of the rod array on the resonant frequencies of the crystal plate is examined.The results are potentially useful for using thickness-stretch modes of crystal plates to measure the mechanical properties of microrod arrays.
基金supported by the National Natural Science Foundation of China(11225421,11474277 and11434010)
文摘SiO_2/Si substrate has been widely used to support two-dimensional （2-D） crystal flakes grown by chemical vapor deposition or prepared by micromechanical cleavage. The visibility of 2-D flakes is very sensitive to the thickness of the SiO_2 layer （hsiO_2）, which can not be determined precisely after the deposit of 2-D flakes. Here, we demonstrated a simple, fast and nondestructive tech- nique to precisely determine hsiO_2 of SiO_2 films on Si substrate only by optical contrast measurement with a typical micro-Raman confocal system. Because of its small lateral resolution down to the micrometer scale, this tech- nique can be used to access hsiO_2 on SiO_2/Si substrate that has been partially covered by 2-D crystal flakes, and then further determine the layer number of the 2-D crystal flakes. This technique can be extended to other dielectric multilayer substrates and the layer-number determination of 2-D crystal flakes on those substrates.
基金supported by the 100 Talents Programme of Chinese Academy of Sciences(08BM031001)the Fok Ying Tung Education Foundation (114013) to H.M.the National Basic Research Program of China (2009CB320300)
文摘The "solidified liquid layer" model has been examined using a quartz crystal microbalance(QCM) with a polymeric matrix.The model is shown to give a reasonable explanation for the following experimental observations:(i) The opposite response of the QCM and surface plasmon resonance(SPR) for the activation process;(ii) the marked difference in the responses for IgG/anti-IgG interaction between QCM and SPR.Theoretical analysis and experimental results indicated that QCM is sensitive to the thickness change of the "solidified liquid layer" but not the mass of captured biomolecules(i.e.,the immobilized mass),implying caution must be taken in interpreting QCM results.
文摘Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.
基金supported by the National Natural Science Foundation of China(Grant Nos.61177017,61275175,61036007,61377028,and 61077022)National Science Foundation for Distinguished Young Scholars of China(Grant No.61125505)the"111" Project of China(Grant No.B08002)
文摘In this paper,the pentacene-based organic field-effect transistors(OFETs)with poly(methyl methacrylate)(PMMA)as gate dielectrics were fabricated,and the effects of gate dielectric thickness and semiconductor thickness on the device performance were investigated.The optimal PMMA thickness is in the range of 350–400 nm to sustain a considerable current density and stable performance.The device performance depends on the thicknesses of the active layer non-monotonically,which can be explained by the morphology of the pentacene film and the position of the conducting channel in the active layer.The device with a pentacene thickness of 50 nm shows the best performance,which has a maximum hole mobility of 1.12 cm2/V·s.In addition,the introduction of a thin layer of tris-(8-hydroxyquinolinato)aluminum(Alq3)to the OFETs as a light-emitting material greatly decreases the device performance.
