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光学级硅酸镓镧晶体的生长初探(Ⅰ)——晶体原料、起始配比与提出量的讨论
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作者 王继扬 张建秀 +6 位作者 刘耀刚 孔海宽 葛炳辉 董胜明 严振华 尹鑫 蒋民华 《硅酸盐学报》 EI CAS CSCD 北大核心 2004年第11期1371-1376,共6页
根据制作La3Ga5SiO14(LGS)晶体电光Q开关的需要,生长了可用于制作电光Q开关的LGS晶体。根据大量晶体生长实验的结果,讨论了晶体原料纯度、来源、晶体原料起始组分配比及晶体提出量与晶体质量的关系,认为Ga2O3的纯度和来源对晶体质量的... 根据制作La3Ga5SiO14(LGS)晶体电光Q开关的需要,生长了可用于制作电光Q开关的LGS晶体。根据大量晶体生长实验的结果,讨论了晶体原料纯度、来源、晶体原料起始组分配比及晶体提出量与晶体质量的关系,认为Ga2O3的纯度和来源对晶体质量的影响最大。实际生长光学应用的LGS晶体过程中,La2O3纯度为5N(或6N),而SiO2为6N。起始组分配比应选共熔点处的配比,即x(La2O3)=30.00%,x(Ga2O3)=50.65%,x(SiO2)=19.35%。考虑到生长过程中Ga2O3的挥发,Ga2O3应适当过量,n(Ga)/n(Si)范围为5.20~5.30。晶体提出量与起始组分有关,晶体提出量以50%~60%为宜。 展开更多
关键词 硅酸镓镧 晶体生长 提拉法 晶体原料 起始组分配比 提出量
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Nd∶GGG多晶原料的制备与表征 被引量:4
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作者 孙晶 刘景和 +3 位作者 曾繁明 王成伟 黄德馨 刘晓宇 《硅酸盐通报》 CAS CSCD 北大核心 2009年第2期388-390,394,共4页
采用固相反应法制备了Nd∶GGG晶体原料。XRD测试结果表明,固相反应法合成Nd∶GGG原料的最佳温度为1300℃;扫描电镜观察发现,粉体颗粒呈球形,平均粒径约为1μm;荧光性能的分析表明,荧光发射的最强峰位于1061.54nm处,是Nd3+4F3/2-4I11/2... 采用固相反应法制备了Nd∶GGG晶体原料。XRD测试结果表明,固相反应法合成Nd∶GGG原料的最佳温度为1300℃;扫描电镜观察发现,粉体颗粒呈球形,平均粒径约为1μm;荧光性能的分析表明,荧光发射的最强峰位于1061.54nm处,是Nd3+4F3/2-4I11/2跃迁产生的荧光发射。 展开更多
关键词 固相反应法 Nd∶GGG 晶体原料
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Advances in Application of New Catalytic Materials in Petroleum Refining and Petrochemicals Production
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作者 He Yigong Lin Min +1 位作者 Mu Xuhong Shu Xingtian (SINOPEC Research Institute of Petroleum Processing, Beijing 100083) 《China Petroleum Processing & Petrochemical Technology》 SCIE CAS 2006年第1期1-5,共5页
This article introduces the solid acid catalyst for isobutene/butylenes alkylation, the HTS Ti/Si zeolite for ammonoxidation of cyclohexanone and the noncrystalline alloy catalyst and magnetically stabi- lized bed for... This article introduces the solid acid catalyst for isobutene/butylenes alkylation, the HTS Ti/Si zeolite for ammonoxidation of cyclohexanone and the noncrystalline alloy catalyst and magnetically stabi- lized bed for hydrofining of caprolactam that were developed recently by SINOPEC Research Institute of Petroleum Processing (RIPP). 展开更多
关键词 CATALYST material solid acid non-crystalline alloy magnetically stabilized bed technology
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Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes 被引量:2
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作者 Juan F. Sanchez-Royo Suillermo Munoz-Matutano +9 位作者 Mauro Brotons-Gisbert Juan P. Martinez-Pastor Alfredo Segura Andres Cantarero Rafael Mata Josep Canet-Ferrer Gerard Tobias Enric Canadell Jose Marques-Hueso Brian D. Gerardot 《Nano Research》 SCIE EI CAS CSCD 2014年第10期1556-1568,共13页
The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet t... The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness (as large as 0.2 eV for three single layers). First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies. 展开更多
关键词 indium selenide two-dimensional flakes micro-Raman spectroscopy MICRO-PHOTOLUMINESCENCE electronic structure
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