The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four featur...The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 rain, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.展开更多
Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermedi...Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.展开更多
The relationship between the solid/liquid interface and the crystal orientation for pure magnesium,which grows in fashion of cellular crystal in unidirectional solidification,was investigated.The results show that the...The relationship between the solid/liquid interface and the crystal orientation for pure magnesium,which grows in fashion of cellular crystal in unidirectional solidification,was investigated.The results show that the energy of the solid/liquid interface is the lowest during cellular crystal growth of pure magnesium;and the solid/liquid interface is covered by the basal face{0001}and by the crystal face made up of three atoms located at the orientation{0001}0100and two atoms located at the inner of magnesium crystal cell.The strongest bond is formed in the direction of 61.9°viating from the growth direction,and the second strong bond is formed in the directions of 8.5°d 47.7°espectively,deviating from the growth direction.The angle between the basal face{0001} and the growth direction is 61.9°he theoretical analysis results are basically consistent with the experimental results from SUSUMU et al.展开更多
文摘The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 rain, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.
文摘Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.
基金Project(2007T078)supported by the Outstanding Innovation Team in Colleges and Universities of Education Department of Liaoning Province,China
文摘The relationship between the solid/liquid interface and the crystal orientation for pure magnesium,which grows in fashion of cellular crystal in unidirectional solidification,was investigated.The results show that the energy of the solid/liquid interface is the lowest during cellular crystal growth of pure magnesium;and the solid/liquid interface is covered by the basal face{0001}and by the crystal face made up of three atoms located at the orientation{0001}0100and two atoms located at the inner of magnesium crystal cell.The strongest bond is formed in the direction of 61.9°viating from the growth direction,and the second strong bond is formed in the directions of 8.5°d 47.7°espectively,deviating from the growth direction.The angle between the basal face{0001} and the growth direction is 61.9°he theoretical analysis results are basically consistent with the experimental results from SUSUMU et al.
