基于目标级联法的薄膜晶体管液晶显示器生产链协同规划

针对生产链上的企业因分布在不同的地方而各自独立决策,难以取得整个生产链的协同效应,将目标级联法(ATC)应用到生产链的协同优化研究中,以薄膜晶体管液晶显示器产业为例,考虑了经典的成本约束、库存约束、运输约束等限制条件,设计了服从ATC建模思想的生产链协同规划三层级模型;同时建立了相同情境下的一体化模型,作为ATC求解效果的对比。最后,从结果正确性、时间复杂度、决策独立性和信息私有性4个角度对基于ATC的生产链协同规划研究进行评价,证明了ATC层次化建模方法解决生产链协同规划问题的优越性。

臭氧水在TFT制造工艺中的作用

本文阐述了臭氧水在薄膜晶体管制造工艺中所起的清洗及成膜作用。在薄膜晶体管制造中,引入臭氧水工艺,增强了它的可控性,增加了欧姆接触,降低点欠陷数量,提高成品率。

Si/SiGe PMOSFET USING P^+ IMPLANTATION TECHNOLOGY

Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.

Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors

Carbon nanotube thin film transistor （CNT-TFF） is an emerging technology for future macroelectronics, such as chemical and biological sensors, optical detectors, and the backplane driving circuits for flat panel displays. The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process. In such fabrication process, photoresist （PR） residue contaminates the interface of tube-metal contact and deteriorates the device performance. In this paper, ultraviolet ozone （UVO） and oxygen plasma treat- ments were employed to remove the PR contamination. Through our well-designed experiments, the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface, while oxygen plasma treatment is too reactive and hard to control, which is not appropriate for CNT-TFTs. It is determined that 2-6 rain UVO treatment is the preferred window, and the best optimized treatment time is 4 rain, which leads to 15% enhancement of device performance.

High χ polystyrene-b-polycarbonate for next generation lithography

Over the past half century,the semiconductor chips have deeply influenced our everyday life through increasingly sophisticated electronic products.The central driving force underlying the remarkable evolution in semiconductor industry is Moore’s Law,nowadays referring to a doubling of transistor counts per chip every 18 months.Sustaining Moore’s Law is economically beneficial;while the manufacturing cost per chip has been held constant,

High yield fabrication of semiconducting thin-film field-effect transistors based on chemically functionalized single-walled carbon nanotubes

Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical initiators.The UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators.The effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic substrates.Furthermore,it was found that FET devices based on 1,1'-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT surface.This method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.

Progress in flexible organic thin-film transistors and integrated circuits

Organic thin-film transistor constructs the headstone of flexible electronic world such as conformable sensor arrays and flexible active-matrix displays. With solutionprocessed methods, it forges ahead toward large-area, lowcost manufacturing goals. As an indispensable complement to traditional silicon-based transistors, organic thin-film field-effect transistors have made great progress in materials,performance, bending capacity, and integrated circuits in recent few years. Flexible transistors and circuitry have extremely promising application prospects and possess irreplaceable status in foldable displays, artificial skins and bendable smart cards. In this review, we will discuss the evolution of flexible organic transistors and integrated circuits in terms of material, fabrication as well as application.