A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations ...A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models.展开更多
The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First...The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.展开更多
基金Supported by the National Natural Science Foundation of China(No.61271067)
文摘A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models.
基金Project(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProject(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China+1 种基金Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
