With more scaling, the speed of than 40 years Moore CMOS transistors is around 100 GHz. Such fact makes it possible to realize mm-wave circuits in CMOS. However, with the target of achieving broadband and power-effici...With more scaling, the speed of than 40 years Moore CMOS transistors is around 100 GHz. Such fact makes it possible to realize mm-wave circuits in CMOS. However, with the target of achieving broadband and power-efficient operation, 60 GHz CMOS RF transceiver faces severe challenges. After reviewing the technology issues, regarding the 60 GHz applications, this paper discusses design challenges both from the system and the building block levels, and also presents some simulated or measured circuits results.展开更多
Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneo...Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.展开更多
基金the Project'Design of 60GHz RF CMOS chips and modules'supported by Chinese National High Tech.(863)Plan(2011AA010201 and 2011AA010202)partly supported by National Natural Science Foundation of China(No.61306030)
文摘With more scaling, the speed of than 40 years Moore CMOS transistors is around 100 GHz. Such fact makes it possible to realize mm-wave circuits in CMOS. However, with the target of achieving broadband and power-efficient operation, 60 GHz CMOS RF transceiver faces severe challenges. After reviewing the technology issues, regarding the 60 GHz applications, this paper discusses design challenges both from the system and the building block levels, and also presents some simulated or measured circuits results.
基金supported by the National Key Research and Development Program(Grant No.2016YFB0400500)the National Grid Science&Technology Project(Grant No.5455DW150006)+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2017JM6003)the Industrial Research Project of Science and Technology Department of Shaanxi Province(Grant No.2016GY-076)the 111 Project(Grant No.B12026)
文摘Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.
