A new physical current-voltage model for polysilicon thin-film transistors （poly-Si TFTs） is presented. Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of ...A new physical current-voltage model for polysilicon thin-film transistors （poly-Si TFTs） is presented. Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of surface potential is derived using the Lambert W function, which greatly improves computational efficiency and is critical in circuit simulation. Based on the exponential density of trap states and the calculated surface potential, the drain current characteristics of the subthreshold and the strong inversion region are predicted. A complete and unique drain current expression, including kink effect, is deduced. The model and the experimental data agree well over a wide range of channel lengths and operational regions.展开更多
The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electro...The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electron spectroscopy in air）. Furthermore, ESR （electron spin resonance） and AFM （atomic force microscopy） were used to investigate the surface morphology and molecular orientation, respectively. ESR analysis indicated the molecular orientation of the P3HT crystalline in the blend thin films, which the crystalline oriented normal to the substrate with distribution of 35°. AFM images indicated that the surface morphology of P3HT film was affected by the presence of PCBM nanoparticles. Solution-processed OTFTs （organic thin-film transistors） based on P3HT/PCBM blend thin film in a top source-drain contact structure was fabricated, and the electrical characteristics of the devices were also investigated. A unipolar property with p-channel characteristics were obtained in glove box measurement.展开更多
Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced ...Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced by X-ray diffraction （XRD） and atomic force microscopy （AFM）. These films showed preferred orientation in the （110） plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.展开更多
文摘A new physical current-voltage model for polysilicon thin-film transistors （poly-Si TFTs） is presented. Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of surface potential is derived using the Lambert W function, which greatly improves computational efficiency and is critical in circuit simulation. Based on the exponential density of trap states and the calculated surface potential, the drain current characteristics of the subthreshold and the strong inversion region are predicted. A complete and unique drain current expression, including kink effect, is deduced. The model and the experimental data agree well over a wide range of channel lengths and operational regions.
文摘The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electron spectroscopy in air）. Furthermore, ESR （electron spin resonance） and AFM （atomic force microscopy） were used to investigate the surface morphology and molecular orientation, respectively. ESR analysis indicated the molecular orientation of the P3HT crystalline in the blend thin films, which the crystalline oriented normal to the substrate with distribution of 35°. AFM images indicated that the surface morphology of P3HT film was affected by the presence of PCBM nanoparticles. Solution-processed OTFTs （organic thin-film transistors） based on P3HT/PCBM blend thin film in a top source-drain contact structure was fabricated, and the electrical characteristics of the devices were also investigated. A unipolar property with p-channel characteristics were obtained in glove box measurement.
文摘Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced by X-ray diffraction （XRD） and atomic force microscopy （AFM）. These films showed preferred orientation in the （110） plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.
