A1/Ge双层膜退火过程中多中心晶化生长的模拟

对 a-Ge/Al 双层膜在退火过程中出现的分形晶化现象进行了模拟研究。结果显示,各团簇的生长呈现出各向异性。分形晶化是随机相继触发形核的结果。这种多中心分形晶化图形显示出多重分形特征,用盒计数法得到了模拟图形的多重分形谱。

水热法合成单斜晶相BiVO4及其可见光催化活性研究

以Bi（NO3）3·5H2O和V2O5作为铋源和钒源，水热合成法成功合成出枝晶状m—BiVO4，采用X射线粉末衍射（XRD）、扫描电子显微镜（SEM）、傅立叶变换红外光谱（FT—IR）和紫外一可见光谱（UV—Vis）等方法对样品进行了详细的理化性能表征，结果证明，合成的光催化剂是结晶良好的枝晶状m-BiVO4：m—BiVO4中心微米棒边缘光滑，粗细均匀，平均直径为500nm，长度范围为6—10μm；两侧分枝长度范围在5—8μm，平均直径为400nm。试验选用刚果红作为目标降解有机染料，研究m—BiVO4对其光降解活性，120min内刚果红的光降解率达到了90％。

a—Ge/Au双层膜中单分形团族的Monte—Carlo模拟

本文用 Monte-Carlo 方法模拟了 a—Ge/Au 双层膜中单中心分形生长过程。模拟图形与实验结果一致说明实际的晶化生长是由随机逐次成核过程决定的。多重分形谱能定量地表征单生长中心晶化图形。

Morphology and optical properties of tetrapod-like zinc oxide whiskers synthesized via equilibrium gas expanding method

The zinc oxide whiskers were synthesized by the equilibrium gas expanding method at the temperature of 700 C with metallic zinc as the main raw material without any catalysts. The effects of the growth time on microstructure and photoluminescence properties were investigated. The results show that the as-grown samples are composed of uniform tetrapod-like ZnO whiskers. The length and diameter of the arms of the tetrapod-like ZnO whiskers increase obviously with the increase of the growth time. The strong single ultraviolet （UV） emission centering 385-391 nm without any accompanying deep-level emission is observed in the room temperature photoluminescence （PL） spectra of the whiskers. The intensity of UV emission increases markedly with the increase of growth time.

Hot pressing densification of WC-Mo_xC binderless carbide

WC-6MoxC-0.47Cr3C2-0.28VC binderless carbide was prepared by hot pressing （1700 °C, 20 MPa）. The sample was observed and analyzed by scanning electron microscopy, energy dispersive X–ray spectroscopy and X–ray diffraction. The results show that during the hot pressing process, W atoms dissolve substantially into the MoxC crystal lattices; whilst, the reverse dissolution of Mo atoms into the WC crystal lattices takes place. Consequently, the main phase and binder phase structure are formed. The phase compositions of the main phase and binder phase are a WC-based solid solution containing Mo and a Mo2C-based solid solution containing W, respectively. The isotropic dissolution and precipitation of W and Mo atoms do not result in substantial carbide coarsening. The mechanism for the densification was discussed.

Effects of neodymium addition on microstructure and mechanical properties of near-eutectic Al-12Si alloys

The microstructure and mechanical properties of near-eutectic Al-12 Si alloys modified with 0-0.4% Nd（mass fraction） were investigated. The results indicate that a submicro- or nano-sized Al2 Nd phase is observed in the modified alloy with 0.3% Nd. The morphology of the α（Al） phase is significantly refined in the Nd-modified alloys. The primary Si morphology simultaneously changes into a fine, particle-like morphology, and the morphology of eutectic Si becomes fine-fibrous instead of coarse-acicular. Relatively few growth twins are observed on the surface of the Si plate in the Al-12Si-0.3Nd alloy at the optimal modification level. The mechanical property test results confirm that the mechanical properties of the as-cast Al-12 Si alloys are enhanced after the Nd addition, with optimal ultimate tensile strength（UTS） of 252 MPa and elongation（EL） of 13% at an Nd content of 0.3%. The improved mechanical properties are attributed to the refined morphology of Si phase and the formation of the Al2 Nd phase.

高度b轴取向Ge-ZSM-5分子筛膜的制备

在α-Al2O3载体上,以原位晶化-二次生长法合成了高度b轴取向的Ge-ZSM-5分子筛膜,采用X射线衍射、扫描电镜以及极图分析对所制备的Ge-ZSM-5分子筛膜进行表征。结果表明,在Ge-ZSM-5分子筛膜中,b轴取向晶体可达94%。

Anisotropic and temperature-dependent growth mechanism of S-phase precipitates in Al-Cu-Mg alloy in relation with GPB zones

By employing atomic-resolution imaging and first principles energy calculations, the growth behavior of S-phase precipitates in a high strength A1-Cu-Mg alloy was investigated. It is demonstrated that the nucleation and growth of the S-phase precipitate are rather anisotropic and temperature-dependent companying with low dimensional phase transformation. There are actually two types of Guinier-Preston （GP） zones that determine the formation mechanism of S-phase at high aging temperatures higher than 180 ℃. One is the precursors of the S-phase itself, the other is the structural units or the precursors of the well-known Guinier-Preston-Bagaryatsky （GPB） zones. At high temperatures the later GPB zone units may form around S-phase precipitate and cease its growth in the width direction, leading to the formation of rod-like S-phase crystals; whereas at low temperatures the S-phase precipitates develop without the interference with GPB zones, resulting in S-phase orecioitates with lath-like momhology.

Effect of thermal stabilization on microstructure and mechanical property of directionally solidified Ti-46Al-0.5W-0.5Si alloy

Effect of thermal stabilization on the microstructure and mechanical property of directionally solidified Ti-46Al-0.5W-0.5Si （mole fraction, %） alloy was investigated. The specimens were thermal stabilized for different time （t） and directionally solidified at a constant growth rate of 30 μm/s and temperature gradient of 20 K/mm. Dependencies of the primary dendritic spacing （λ1）, secondary dendritic spacing （λ2）, interlamellar spacing （λL） and microhardness （HV） on holding time were determined. The values of the λ1, λ2 and λL increase with the increase of t, and the value of HV decreases with the increase of t. The increase of t is helpful to obtain a good directional solidification structure. However, it reduces the mechanical property of the directionally solidified TiAl alloy. The optimized value of t is about 30 min.

Directional solidification and characterization of NiAl-9Mo eutectic alloy

Ni-45.5Al-9Mo （mole fraction,%） alloy was directionally solidified with a constant temperature gradient （GL=334 K/cm） and growth rates ranging from 2 to 300 μm/s using a Bridgman type crystal growing facility with liquid metal cooling （LMC） technique. The effect of growth rate （v） on the solidified microstructures such as rod spacing （λ）, rod size （d） and rod volume fraction was experimentally investigated. Two types of the solidified interfaces, planar and cellular, were identified. On the condition of both planar and cellular eutectic microstructures, the relationships between λ, d and v were given as： λv1/2=5.90 μm·μm1/2·s1/2 and dv1/2=2.18μm·μm1/2·s1/2, respectively. It was observed that the volume fraction of Mo phase could be adjusted in a certain range. The variation of phase volume fraction was attributed to undercooling increase and the growth characteristics of the individual constituent phases during the eutectic growth.

Precipitates identification in R_2PdSi_3(R= Pr,Tb and Gd) single crystal growth

Floating zone method with optical radiation heating was applied to growing a class of R2PdSi3（R=Pr,Tb and Gd） single crystals due to its containerless melting and high stability of the floating zone.One serious problem during the single crystal growth,precipitates of secondary phases,was discussed from the following four parts：precipitates from the raw materials and preparation process,precipitates formed during the growing process,precipitates in the melts and precipitates in the grown crystals.Annealing treatment and composition shift can effectively reduce the precipitates which are not formed during the crystallization but precipitated on post-solidification cooling from the as-grown crystal matrix because of the retrograde solubility of Si.

AFM Observation of GaN Grown on Different Substrates at Low Temperatures

Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results\ It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion\ The analysis shows that no apparent relationship exists between the optical properties and layer morphology.

Crystal growth of Gd_2PdSi_3 intermetallic compound

Gd2PdSi3 single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. The compound exhibited congruent melting behavior at a liquidus temperature of about 1700 ＆#176;C. The slightly Pd-depleted composition of the crystal, with respect to the nominal Gd2PdSi3 stoichiometry, led to gradual accumulation of Pd in the traveling zone and to a decreasing operating temperature during the growth process. Thin platelet-like precipitates of a GdSi phase were detected in the stoichiometric feed rod growth crystal matrix which can be reduced by annealing treatment. Feed rod composition shift crystal growth was proved to be a better way of getting high quality of Gd2PdSi3 single crystal.

Thermal stability evaluation of nanostructured Al6061 alloy produced by cryorolling

Grain growth of nanostructured Al6061produced by cryorolling and aging process was investigated during isothermalheat treatment in100?500°C temperature range.Transmission electron microscopy(TEM)observations demonstrate that aftercryorolling and aging at130°C for30h,the microstructure contains61nm grains with dispersed50?150nm precipitates and0.248%lattice strain.In addition,an increase in tensile strength up to362MPa because of formation of fine strengtheningprecipitation and nano-sized grains was observed.Thermal stability investigation within100?500°C temperature range showedrelease of lattice strain,dissolution of precipitates and grain growth.According to the X-ray diffraction(XRD)analysis,Mg2Siprecipitates disappeared after annealing at temperatures higher than300°C.According to the results,due to the limited grain growthup to200°C,there would be little decrease in mechanical properties,but within300?500°C range,the grain growth,dissolution ofstrengthening precipitates and decrease in mechanical properties are remarkable.The activation energies for grain growth werecalculated to be203.3kJ/mol for annealing at100?200°C and166.34kJ/mol for annealing at300?500°C.The effect ofprecipitation dissolution on Al lattice parameter,displacement of Al6061(111)XRD peak and Portevin?LeChatelier(PLC)effect onstress?strain curves is also discussed.

Parameter Optimization of CdZnTe Crystal Growth Simulated by Finite Element Method

During the crystal grown by VBM, the solid/liquid interface configurations greatly influence the quality of as-grown crystals. In this paper, finite element method (FEM) was used to simulate the growth process of CdZnTe crystal. The effects of different crucible moving rates and temperature gradient of adiabatic zone on crystal growth rate and solid-liquid interface configuration were studied as well. Simulation results show that when crucible moves at the rate of about 1mm/h, which is nearly equal to crystal growth rate, nearly flat solid/liquid interface and little variation of axial temperature gradient near it can be attained, which are well consistent with the results of experiments. CdZnTe crystal with low dislocation density can be obtained by employing appropriate crucible moving rate during the crystal growth process.

Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures

Single-crystalline Ga-doped SnO2 nanowires and SnO2：Ga2O3 heterogeneous microcombs were synthesized by a simple one-step thermal evaporation and condensation method. They were characterized by means of X-ray powder diffraction （XRD）, field-emission scanning electron microscopy （FE-SEM）, energy-dispersive X-ray spectroscopy （EDS）, transmission electron microscopy （TEM） and selected-area electron diffraction （SAED）. FE-SEM images showed that the products consisted of nanowires and mierocombs that represent a novel morphology. XRD, SAED and EDS indicated that they were single-crystalline tetragonal SnO2. The influence of experimental conditions on the morphologies of the products is discussed. The morphology of the product showed a ribbon-like stem and nanoribbon array aligned evenly along one or both side of the nanoribbon. It was found that many Ga2O3 nanoparticles deposited on the surface of the microcombs. The major core nanoribbon grew mainly along the [110] direction and the self-organized branching nanoribbons grew epitaxially along [110] or [110] orientation from the （110） plane of the stem. A growth process was proposed for interpreting the growth of these remarkable SnO2：Ga2O3 heterogeneous microcombs. Due to the heavy doping of Ga, the emission peak in photoluminescence spectra has red-shifted as well as broadened significantly.

Crystal Growth,Structure and Morphology of Rifapentine Methanol Solvate

Rifapentine, an important antibiotic, was crystallized from methanol solvent in the form of its methanol solvate. The crystal structure of rifapentine methanol solvate belongs to monoclinic, space group P21, with the unit cell parameters of a = 1.2278（3） nm, b = 1.9768（4） rim, c = 1.2473（3） nm, Z= 2, and β = 112.35（3）. The parallelepiped.morphology was also predicted by Materials Studio simulation program.. The influence of intermolecular in-teraction was taken into account in the attachment energy model. The crystal shape fits the calculated morphology well, which was performed on the potential energy minimized model using a generic DREIDING 2.21 force fieldand developed minimization protocol with derived＇partial charges.

Thermal stability of nanocrystalline Mg-based alloys prepared via mechanical alloying

Thethermal stability and the kinetics of grain growth of nanocrystalline Mg-6Al-1Zn and Mg-6Al-1Zn-1Si alloys prepared via mechanical alloying were investigated. It started with elemental powders, using a variety of analytical techniques including differential scanning calorimetry （DSC）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and energy dispersive spectrometry. The kinetics of grain growth in isothermal annealing was investigated. The XRD results show that, although the grain sizes of both material systems increase as the annealing temperature rises, the Si-containing system displays a relatively smaller grain size, i.e., 60 nm compared with 72 nm in Mg-6Al-1Zn system, after being exposed to 350 ℃ for 1 h. The second-phase intermetallic particle Mg2Si formed during the isothermal annealing of Mg-6Al-1Zn-1Si system could influence not only the activation energy but also the exponent of kinetic equation. Higher hardness values obtained in the Si-containing system would be due to the formation of Mg2Si intermetallic phase.

Improvement of thermally grown oxide layer in thermal barrier coating systems with nano alumina as third layer

A thermally grown oxide （TGO） layer is formed at the interface of bond coat/top coat. The TGO growth during thermal exposure in air plays an important role in the spallation of the ceramic layer from the bond coat. High temperature oxidation resistance of four types of atmospheric plasma sprayed TBCs was investigated. These coatings were oxidized at 1000 °C for 24, 48 and 120 h in a normal electric furnace under air atmosphere. Microstructural characterization showed that the growth of the TGO layer in nano NiCrAlY/YSZ/nano Al2O3 coating is much lower than in other coatings. Moreover, EDS and XRD analyses revealed the formation of Ni（Cr,Al）2O4 mixed oxides （as spinel） and NiO onto the Al2O3 （TGO） layer. The formation of detrimental mixed oxides （spinels） on the Al2O3 （TGO） layer of nano NiCrAlY/YSZ/nano Al2O3 coating is much lower compared to that of other coatings after 120 h of high temperature oxidation at 1000 °C.

Advances of the Vertical Directional Solidification Technique for the Growth of High Quality GaSb Bulk Crystals

Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification （VDS） technique has been employed for the growth of bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure. An automated furnace was designed and fabricated for the controlled temperature gradients, growth conditions and parameters. The typical ingots growths of GaSb have shown the gap of 20 μm-145 μm and mobility μn = 1125 cm^2/V.sec at 300 K. Mobility is highest and five times larger than the attached growths. Dislocation density is the order of 104/cm2 in the conical region, decreases in the direction of growth, and in many crystals reached less than 103/cm2. The spontaneous gap formation due to the meniscus depends on the pressure differences and thermal state. GaSb grown ingots have shown progress in the properties of crystal grown ever, and attributed to reduce thermal stress without contact to the ampoule wall.