Nonlinear Absorption and Low-threshold Two-photon Pumped Amplified Stimulated Emission from FAPbBr_(3) Nanocrystals

Formamidinium lead bromide(FAPbBr_(3))nanocrystals(NCs)have been considered to be a good optoelectronic material due to their pure green emission,excellent stability and superior carrier transport characteristics.However,two-photon pumped amplified spontaneous emission(ASE)and the corresponding nonlinear optical properties of FAPbBr_(3) NCs are scarcely revealed.Herein,we synthesized colloidal FAPbBr_(3) NCs with different sizes by changing the molar ratio of FABr/PbBr_(2) in the precursor solution,using ligand assisted precipitation(LARP)technology at room temperature.Photoluminescence(PL)and time resolved photoluminescence(TRPL)spectroscopy were measured to characterize their ASE properties.And their nonlinear optical properties were studied through the Zscan technique and the two-photon excited fluorescence method.The stimulated emission properties including oneand two-photon pumped ASE have been realized from FAPbBr_(3) NCs.With large two-photon absorption coefficient(0.27 cm/GW)and high non-linear absorption cross-section(7.52×10^(5) GM),ASE with threshold as low as 9.8μJ/cm^(2) and 487μJ/cm^(2) have been obtained from colloidal FAPbBr_(3) NCs using one-and two-photon excitations.These results indicate that as a new possible green-emitting frequency-upconversion material with low thresholds,FAPbBr_(3) NCs hold great potential in the development of high-performance two-photon pump lasers.

Dynamic recrystallization behavior of 7085 aluminum alloy during hot deformation

The dynamic recrystallization behavior of 7085 aluminum alloy during hot compression at various temperatures （573？723 K） and strain rates （0.01-10 s^-1） was studied by electron back scattered diffraction （EBSD）, electro-probe microanalyzer （EPMA） and transmission electron microscopy （TEM）. It is shown that dynamic recovery is the dominant softening mechanism at high Zener？Hollomon （Z） values, and dynamic recrystallization tends to appear at low Z values. Hot compression with ln Z=24.01 （723 K, 0.01 s？1） gives rise to the highest fraction of recrystallization of 10.2%. EBSD results show that the recrystallized grains are present near the original grain boundaries and exhibit similar orientation to the deformed grain. Strain-induced boundary migration is likely the mechanism for dynamic recrystallization. The low density of Al3Zr dispersoids near grain boundaries can make contribution to strain-induced boundary migration.

Characterization of ZnSe microspheres synthesized under different hydrothermal conditions

ZnSe microspheres were synthesized via a facile hydrothermal method under mild conditions using aqueous zinc nitrate and sodium selenite as raw materials. The effects of hydrothermal temperature, reaction time, concentration of NaOH and amount of hydrazine hydrate on the phase structure, morphology and size of final products were carefully investigated. The phase structures, morphologies and optical properties of the final products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. ZnSe microspheres assembled by average size (about 20 nm) nanocrystals were prepared using 20 mL of 1 mol/L NaOH solution and 10 mL of hydrazine hydrate at 180 °C for 4 h. The results show that the products obtained at low hydrothermal temperature and short reaction time have poor crystallinity and contain impurity phases. The appropriate NaOH concentration and amount of hydrazine hydrate ensure to obtain pure ZnSe with spherical morphology and better luminescence property.

Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure

The photoluminescence （PL） and Raman spectra of undoped ZnO films deposited directly on Si substrate （sample A）,on Si substrate through a SiC buffer layer （sample B）,and on a ZnO crystal wafer （sample C） are investigated. There are emission peaks centered at 3.18eV （ultraviolet,UV） and 2.38eV （green） in these sampies. Comparing the Raman spectra and the variation of the PL peak intensities with annealing atmosphere, we conclude that the luminescence of the samples is related to the tensile strain in the ZnO film due to the lattice mismatch between the film and the substrate. In particular, the tensile strain reduces the formation energy of OZn antisite oxygen defects,which generate the green emission center. After annealing in oxygen-rich atmosphere, many OZn defects are generated. Thus, the intensity of green emission in ZnO/Si hetero-structure materials increases due to tensile strain in ZnO films.

Field Emission from a Mixture of Amorphous Carbon and Carbon Nanotubes Films

A mixture of amorphous carbon and carbon nanotubes films was synthesized on stainless steel plates by a micro- wave plasma enhanced chemical vapor deposition system. The source gases were hydrogen and methane with flow rates of 100 and 16sccm,respectively,with a total pressure of 5.0kPa. The surface morphology and the structure of the films were characterized by field emission scanning electron microscopy （SEM） and Raman scattering spectroscopy. Field emission properties of as-deposited film were measured in a vacuum room below 5 ×10^ 5 Pa. The experimental results show that the initial turn-on field is 0. 9V/μm; The current density is 4.0mA/cm2 and the emission sites are dense and uniform at an electric field of 3.7V/μm. These results indicate that such a mixture of amorphous carbon and carbon nanotubes films is a promising material for field emission applications.

Fabrication and Field Emission of Silicon Nano-Crystalline Film

The silicon nano-crystalline (nc-Si) film is fabricated on <100> orientation,0.01Ω·cm resistivity,and p-type boron-doped silicon wafer by the anodic etching.The microstructure and the orientation of nc-Si are examined by the scanning electron microscopy,transmission electron microscopy,and X-ray diffraction spectroscopy,respectively.The average size of particle is estimated by Raman spectroscopy.The results show that the particle size of nc-Si film is scattered from 10nm to 20nm,the alignment is compact,the orientation is uniform,the expansion of lattice constant is negligible,and mechanical robustness and stability are good.The correlations between film structure and the experiment parameters such as etching time,HF concentration,and etching current density are discussed.As a potential application,efficient field emission is observed from the nc-Si film,and the turn-on field is about 3V/μm at 0.1μA/cm 2 of current density,which is close to carbon nanotube film's.

Synthesis and upconversion luminescence of Lu_2O_3:Yb^(3+),Tm^(3+) nanocrystals

Lutetium oxide nanocrystals codoped with Tm3＋ and Yb3＋ were synthesized by the reverse-like co-precipitation method, using ammonium hydrogen carbonate as precipitant. Effects of the Tm3＋, Yb3＋ molar fractions and calcination temperature on the structural and upconversion luminescent properties of the Lu2O3 nanocrystals were investigated. The XRD results show that all the prepared nanocrystals can be readily indexed to pure cubic phase of Lu2O3 and indicate good crystallinity. The experimental results show that concentration quenching occurs when the mole fraction of Tm3＋ is above 0.2%. The optimal Tm3＋ and Yb3＋ doped molar fractions are 0.2% and 2%, respectively. The strong blue （490 nm） and the weak red （653 nm） emissions from the prepared nanocrystals were observed under 980 nm laser excitation, and attributed to the 1G4→3H6 and IG4→3F4 transitions of Tm3＋, respectively. Power-dependent study reveals that the 1G4 levels of Tm3＋ can be populated by three-step energy transfer process. The upconversion emission intensities of 490 nm and 653 nm increase gradually with the increase of calcination temperature. The enhancement of the upconversion luminescence is suggested to be the consequence of reducing number of OH- groups and the enlarged nanoerystal size.

Flow behavior and microstructure of ZK60 magnesium alloy compressed at high strain rate

Flow behavior and microstructure of a homogenized ZK60 magnesium alloy were investigated during compression in the temperature range of 250-400 ℃ and the strain rate range of 0.1-50 s^-1. The results showed that dynamic recrystallization （DRX） developed mainly at grain boundaries at lower strain rate （0.1-1 s^-1）, while in the case of higher strain rate （10-50 s^-1）, DRX occurred extensively both at twins and grain boundaries at all temperature range, especially at temperature lower than 350 ℃, which resulted in a more homogeneous microstructure than that under other deformation conditions. The DRX extent determines the hot workability of the workpiece, therefore, hot deformation at the strain rate of 10-50 s^-1 and in the temperature range of 250-350 ℃ was desirable for ZK60 alloy. Twin induced DRX during high strain rate compression included three steps. Firstly, twins with high dislocation subdivided the initial grain, then dislocation arrays subdivided the twins into subgrains, and after that DRX took place with a further increase of strain.

Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs

The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory. The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.

Effect of concurrent precipitation on recrystallization textures in commercial Al-Mn alloys

The effect of concurrent precipitation on recrystallization textures in AA 3003 aluminum alloys was investigated using X-ray diffraction and electron backscattering diffraction（EBSD） analyses. A weak recrystallization texture was observed in the AA 3003 alloy annealed at 783 K due to the high annealing temperature. Under the same conditions, extremely high P {011 } （ 111 ） recrystallization textures were detected in the AA 3003 alloy added with 0. 39% Sc. Based on the EBSD results, no intensely preferential orientation nucleation of recrystallization grains was observed in the early stage of recrystallizafion for both alloys. However, concurrent precipitation strongly retarded the growth of recrystallization grains, except for P nucleation sites, thereby conferring an apparent initial growth advantage for P nucleation sites compared with other nucleation sites. Therefore, a sharp P {011 } 〈 111 〉 texture appeared in concurrently precipitated AA 3003 alloys.

Super Performance InGaP/GaAs Heterojunction Bipolar Transistor with Hexagonal Emitter

Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.

Polysilicon Over-Etching Time Control of Advanced CMOS Processing with Emission Microscopy

The emission microscopy （EMMI） test is proposed as an effective method to control the polysilicon over-etching time of advanced CMOS processing combined with a novel test structure, named a poly-edge structure. From the values of the breakdown voltage （Vbd） of MOS capacitors （poly-edge structure） ,it was observed that,with for the initial polysilicon etching-time, almost all capacitors in one wafer failed under the initial failure model. With the increase of polysilicon over-etching time, the number of the initial failure capacitors decreased. Finally, no initial failure capacitors were observed after the polysilicon over-etching time was increased by 30s. The breakdown samples with the initial failure model and intrinsic failure model underwent EMMI tests. The EMMI test results show that the initial failure of capacitors with poly-edge structures was due to the bridging effect between the silicon substrate and the polysilicon gate caused by the residual polysilicon in the ditch between the shallow-trench isolation region and the active area, which will short the polysilicon gate with silicon substrate after the silicide process.

Super Performance InGaP/GaAs HBT with Novel Structure

A kind of super performance InGaP/GaAs HBT with f T=108GHz and f max =140GHz is demonstrated.The excellent frequency performance results from the novel structure of the U shaped emitter,together with self aligned emitter and LEU(lateral etched undercut) technologies.The HBT with the novel structure shows a distinguished performance with BV CEO up to 25V.And excellent performance of low V offset of 105mV and V knee of 0 50V is great favor of low power applications.The differences due to the different structure are also compared.

FRACTAL BEHAVIOR OF DEVELOPMENT OF PHASE SEPARATION AND CRYSTALLIZATION IN BLENDS OF NYLON-6 WITH SODIUM SALT OF ETHYLENE /METHACRYLIC ACID COPOLYMER

Phase separation was studied by the optical microscopy in blends of nylon 6 (PA6) with sodium salt of ethylene/methacrylic acid copolymer (PEMA).The image collecting technology was used to keep track of the development of blends at a certain temperature.The fractal dimension of phase separation was calculated by the image solving technology according to the fractal theory and the self similarity behavior of the process was proved.The relationship of the fractal behavior with composition and experimental temperature was discussed.The fractal behavior of the crystallization development of the crystal phase of PA6 in blends was also discussed and the fractal behavior calculated.

Synthesis and Photoluminescence of SiOx Nanotubes

Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and the length is more than 10 μm, with small ratio between the inner and outer diameter of the tube. The silicon element in the substrate and the residual oxygen element in reaction chamber were first dissolved into liquid Ga. Thea the SiOs precipitated from the surface of gallium droplet, forming the nanotube structure with Ga droplet being the center. The room temperature photoluminescence measurements under excitation at 260 nm show that the SiOx nanotubes has a strong blue emission at 453 nrn with two shoulders at 410 and 480 nm respectively, which may be related to oxygen defects. The preparation method improved the traditional complicated method and also provided a new way to fabricate SiOx nanotubes in large quantity.

Interdiscipline between optoelectronic materials and mechanical sensors:Recent advances of organic triboluminescent compounds and their applications in sensing

Triboluminescence,also as known as mechanoluminescence,is an attractive optical behavior that means the light emitted from specific organic and inorganic materials when they are subjected to external forces,such as crushing,deformation,cleaving,vibration.Inorganic triboluminescent materials show great potential for applications in sensing,such as stress sensing,damage detection.However,the triboluminescent mechanism of organic materials should be pushed further as well as their application.In this review,we summarized the history of development and possible mechanism of organic triboluminescent materials,and discussed various applications in sensing field.At the same time,inspired by the existing research progress in inorganic triboluminescent materials,we proposed the flourishing development prospects of organic triboluminescent materials in stress sensors,movement monitoring,imaging stress distribution,visualization of crack propagation,structural diagnosis,and other fields.

EBSD characterization of Al7075/graphene nanoplates/carbon nanotubes composites processed through post-deformation annealing

The effects of the post-deformation annealing on the microstructural evolution of hot rolled Al7075 matrix composites reinforced with CNTs and GNPs were investigated.The multi-pass hot rolling was applied on the stir cast samples.Annealing was then applied to the composites at 450℃ for 4 h.Microstructural evolution was examined by SEM,EDS,and EBSD techniques.EBSD data showed that the addition of 0.87 vol.%(GNPs+CNTs)significantly inhibited the occurrence of recrystallization.Also,in the composite with 0.96 vol.%CNTs,recrystallization was partially inhibited.Whereas,in composites with 0.92 vol.%of GNPs,the occurrence of recrystallization through particle stimulated nucleation(PSN)mechanism was significantly accelerated.The volume fraction of recrystallized grains depends significantly on the occurrence of PSN in the presence of reinforcements.The intensity and type of the main components of the texture as well as the FCC fibers depend on the type of reinforcement.

Sensory exotropia subsequent to senile cataract

To evaluate the phacoemulsification and intraocular lens implantation in patients with sensory exotropia subsequent to senile cataract. The authors prospectively studied the role of phacoemulsification and intraocular lens implantation on 25 patients by observing visual acuity, ocular alignment, binocular vision and diplopia pre-, 1 month post- and 3 months post-operation. The patients underwent follow-up for three months. Postoperatively, one patient had a corrected visual acuity of 20/50, and 24 patients had 20/40 or better. The ocular alignment, binocular vision and diplopia were resolved spontaneously. Phacoemulsification and intraocular lens implantation performed together is effective on sensory exotropia subsequent to senile cataract.

Upconversion Luminescence from Ho3＋ and Yb3＋ Codoped α-NaYF4 Single Crystals

The Ho3＋/yb3＋ co-doped a-NaYF4 single crystal was grown successfully for the first time by a modified Bridgman method in which KF was used as assisting flux and a large temperature gradient （70-90℃ /cm） of solid-liquid interface was adopted. Upconversion emissions at green -544 nm, red -657 and -751 nm were obtained under 980 nm laser diode excitation. The intensity at -544 nm was much stronger than those of -657 and -751 nm. The mechanisms of the upconversion emissions were investigated by studying the relationship between the upconversion intensity and pump power. The optimized Yb3＋ concentration was about 8.08moi% when Ho3＋ concentration was hold at about 1.0mol%. The results showed that Ho3＋/yb3＋ doped α-NaYF4 single crystal was a possible candidate upconversion material for the green solid-state laser.

Fourier Spectrometer based on Wide-range and Phase-locked Michelson Interferometer with Femtosecond Laser Excitation

A wide-range and phase-locked Michelson interferometer technique is described. This technique combined with femtosecond laser is used to measure the spectrum of the rare-earth ion Nd：YVO4, which presents very high signal to noise ratio of interferometric intensity output and higher spectral resolution than traditional grating spectrophotometer.