A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing e...A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.展开更多
A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K co...A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.展开更多
An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measu...An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.展开更多
Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth o...Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.展开更多
A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de...A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.展开更多
Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point (...Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.展开更多
The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and...The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.展开更多
Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via a...Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region. The forward blocking, conducting, and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO. The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics. Additionally,the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized, the process feasibility is analyzed, and a realization scheme is given. The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.展开更多
A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the...A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.展开更多
The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for ...The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory. The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.展开更多
Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and ...Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.展开更多
An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage ...An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage is 0.10V,and the typical breakdown voltage at Ic = 0. 1μA is 3.8V. This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.展开更多
A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is ...A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is larger than 120. By use of device simulation,the cause of NDR is that increasing collector voltage makes the ultrathin base reach through and the device transforms from a bipolar state to a bulk barrier state. In addition, the simulated cutoff frequency is about 60-80GHz.展开更多
An InP-based single-heterojunction bipolar transistor （SHBT） with base μ-bndge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2μm ...An InP-based single-heterojunction bipolar transistor （SHBT） with base μ-bndge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2μm ×12.5μm InP SHBT without de-embedding reaches 178GHz. It is critical in high-speed low power applications,such as OEIC receivers and analog-to-digital converters.展开更多
This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis ...This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.展开更多
文摘A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.
文摘A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.
文摘An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
文摘Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.
文摘A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.
文摘Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.
文摘The structure and microwave characteristics of low-voltage SiGe power HBTs are given.With this structure,the device can operate in a low-voltage and high-current state.By using an interdigital emitter strip layout and the operating voltage ranging from 3 to 4V,the output power in Class C operation can reach 1 65W at 1GHz,with the gain of 8dB.The highest collector efficiency is 67 8% under 3V.
文摘Based on a short anode GTO structure （SA-GTO）,a novel GTO structure called an injection efficiency controlled gate turn off thyristor （IEC-GTO） is proposed,in which the injection efficiency can be controlled via an additional thin oxide layer located in the short anode contact region. The forward blocking, conducting, and switching characteristics are analyzed and compared with an SA-GTO and conventional GTO. The results show that the IEC-GTO can obtain a better trade-off relation between on-state and turn-off characteristics. Additionally,the width of the oxide layer covering the anode region and the doping concentration of the anode region are optimized, the process feasibility is analyzed, and a realization scheme is given. The results show that the introduction of an oxide layer would not increase the complexity of process of the IEC-GTO.
基金The National High Technology Research and Development Program of China(863 Program)(No.2009AA01Z260)
文摘A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.
文摘The alloy temperature dependence of Voffset and Rcontact is studied, and an optimal alloy temperature range for the best trade-off between Voffset and Rcontact, is given for thin base HBTs. In addition,the reason for the high Voffset at high alloy temperature is interpreted using Schottky clamped theory. The lower Voffset of our U-shaped emitter HBT than that of traditional strip emitter HBTs is explained.
文摘Super performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with hexagonal emitter are described.The fabricated HBT shows excellent DC characteristics with low V CE offset voltage (<0 15V) and low knee voltage (<0 5V).Over 14V of the collector base breakdown voltage BV CBO and over 9V of the collector emitter breakdown voltage BV CEO are obtained.For a self aligned InGaP/GaAs HBT with 2μm×10μm emitter area,the f T is extrapolated to 92GHz and f max is extrapolated to 105GHz.These great values are obtained due to the hexagonal emitter and laterally etched undercut (LEU) of collector,indicating the great potential of InGaP/GaAs HBTs for high speed digital circuit and microwave power applications.
文摘An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency （fT） of 162GHz is reported. The emitter size is 0.8μm × 12μm, the maximum DC gain is 120, the offset voltage is 0.10V,and the typical breakdown voltage at Ic = 0. 1μA is 3.8V. This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.
文摘A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is larger than 120. By use of device simulation,the cause of NDR is that increasing collector voltage makes the ultrathin base reach through and the device transforms from a bipolar state to a bulk barrier state. In addition, the simulated cutoff frequency is about 60-80GHz.
文摘An InP-based single-heterojunction bipolar transistor （SHBT） with base μ-bndge and emitter air-bridge is reported. Because those bridges reduce parasitic capacitance greatly, the cutoff frequency fT of the 2μm ×12.5μm InP SHBT without de-embedding reaches 178GHz. It is critical in high-speed low power applications,such as OEIC receivers and analog-to-digital converters.
文摘This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.
