ITO （indium tin oxide） thin films were deposited onto glass substrates by RF （radio frequency） magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substr...ITO （indium tin oxide） thin films were deposited onto glass substrates by RF （radio frequency） magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150 ℃. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 ℃ substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance oflTO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen.展开更多
基金Acknowledgement The authors would like to thank Dr. Q. Qiao and V. Swaminathan for providing AFM measurements. This work has been supported by National Science Foundation/EPSCoR Grant No. 0903804 and by the State of South Dakota. Also acknowledged are National Science Foundation Grant No.IIP-1248454, South Dakota Performance Improvement Funds, and SDSU Research Scholarship Support Fund.
文摘ITO （indium tin oxide） thin films were deposited onto glass substrates by RF （radio frequency） magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150 ℃. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 ℃ substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance oflTO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen.
