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小尺寸单轴应变Si PMOS沟道晶面/晶向选择实验新发现
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作者 陈航宇 宋建军 +2 位作者 张洁 胡辉勇 张鹤鸣 《物理学报》 SCIE EI CAS CSCD 北大核心 2018年第6期258-267,共10页
小尺寸单轴应变Si p型金属氧化物半导体(PMOS)沟道反型层迁移率与晶面/晶向密切相关,应变PMOS优化设计时应合理选择沟道的晶面/晶向.目前,文献已有1.5 GPa应力强度下单轴应变Si PMOS沟道反型层迁移率按晶面/晶向排序的理论模型.然而,在... 小尺寸单轴应变Si p型金属氧化物半导体(PMOS)沟道反型层迁移率与晶面/晶向密切相关,应变PMOS优化设计时应合理选择沟道的晶面/晶向.目前,文献已有1.5 GPa应力强度下单轴应变Si PMOS沟道反型层迁移率按晶面/晶向排序的理论模型.然而,在器件实际制造过程中,覆盖SiN应力膜工艺是固定的,由于沟道弹性劲度系数具有各向异性,这样,不同晶面/晶向应变PMOS沟道所受应力强度不同,进而导致在实际工艺下沟道反型层迁移率晶面/晶向排序理论模型"失效".针对该问题,本文采用中国科学院微电子研究所40 nm工艺流程制备了不同晶面/晶向40 nm沟道小尺寸单轴应变Si PMOS与未应变Si PMOS,并通过器件转移特性测试,获得了小尺寸单轴应变Si PMOS反型层迁移率晶面/晶向排序结论.此有关小尺寸单轴应变Si PMOS沟道反型层迁移率晶面/晶向排序的相关结论,由于考虑了工艺实现因素,与文献理论预测排序结果相比,更适于指导实际器件制造;相关分析方法也可为其他应变材料沟道MOS相关问题的解决提供重要技术参考. 展开更多
关键词 单轴应变 载流子迁移率 晶面/晶向
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Relationship between solid/liquid interface and crystal orientation for pure magnesium solidified in fashion of cellular crystal 被引量:2
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作者 常国威 陈淑英 +2 位作者 周聪 岳旭东 齐义辉 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2010年第2期289-293,共5页
The relationship between the solid/liquid interface and the crystal orientation for pure magnesium,which grows in fashion of cellular crystal in unidirectional solidification,was investigated.The results show that the... The relationship between the solid/liquid interface and the crystal orientation for pure magnesium,which grows in fashion of cellular crystal in unidirectional solidification,was investigated.The results show that the energy of the solid/liquid interface is the lowest during cellular crystal growth of pure magnesium;and the solid/liquid interface is covered by the basal face{0001}and by the crystal face made up of three atoms located at the orientation{0001}0100and two atoms located at the inner of magnesium crystal cell.The strongest bond is formed in the direction of 61.9°viating from the growth direction,and the second strong bond is formed in the directions of 8.5°d 47.7°espectively,deviating from the growth direction.The angle between the basal face{0001} and the growth direction is 61.9°he theoretical analysis results are basically consistent with the experimental results from SUSUMU et al. 展开更多
关键词 magnesium solidification process crystal growth crystal orientation
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Evanescent wave of extraordinary beam at uniaxial crystal surfaces
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作者 贾光一 《Optoelectronics Letters》 EI 2011年第3期229-232,共4页
Under the circumstance of optical axis being in the incident plane,the evanescent wave of total reflection is studied when an extraordinary beam is incident from an isotropic medium upon a uniaxial crystal by using th... Under the circumstance of optical axis being in the incident plane,the evanescent wave of total reflection is studied when an extraordinary beam is incident from an isotropic medium upon a uniaxial crystal by using the general characteristics of uniaxial crystal and electromagnetic field.This paper presents the propagation directions of equiphase plane and the images of evanescent wave,and reveals that the equiamplitude plane and the equiphase plane are not in quadrature any more,and the phase difference between longitudinal wave and transversal wave does not equal π/2,either.But the reflectivity is still kept at 100. 展开更多
关键词 Electromagnetic fields Electromagnetic wave reflection
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