Based on the effective-mass approximation theory and variational method, the laser field and temperature effects on the ground-state donor binding energy in the GaAsflGa1-x AlxAs quantum well （QW） are investigated. ...Based on the effective-mass approximation theory and variational method, the laser field and temperature effects on the ground-state donor binding energy in the GaAsflGa1-x AlxAs quantum well （QW） are investigated. Numerical results show that the donor binding energy depends on the impurity position, laser parameter, temperature, Al composition, and well width. The donor binding energy is decreased when the laser field and temperature are increased in the QW for any impurity position and QW parameter case. Moreover, the laser field has an obvious influence on the donor binding energy of impurity located at the vicinity of the QW center. In addition, our results also show that the donor binding energy decreases （or increases） as the well width （or AI composition x） increases in the QW.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No. 60906044
文摘Based on the effective-mass approximation theory and variational method, the laser field and temperature effects on the ground-state donor binding energy in the GaAsflGa1-x AlxAs quantum well （QW） are investigated. Numerical results show that the donor binding energy depends on the impurity position, laser parameter, temperature, Al composition, and well width. The donor binding energy is decreased when the laser field and temperature are increased in the QW for any impurity position and QW parameter case. Moreover, the laser field has an obvious influence on the donor binding energy of impurity located at the vicinity of the QW center. In addition, our results also show that the donor binding energy decreases （or increases） as the well width （or AI composition x） increases in the QW.
