A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and c...A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.展开更多
The hole transporting layer （HTL） of organic light-emitting device （OLED） was processed by vacuum deposition and spin coating method, respectively, where N,N＇-biphenyl-N, N＇-bis（3-methylphenyl）- 1, l＇-bipheny...The hole transporting layer （HTL） of organic light-emitting device （OLED） was processed by vacuum deposition and spin coating method, respectively, where N,N＇-biphenyl-N, N＇-bis（3-methylphenyl）- 1, l＇-biphenyl-4,4＇ -diamine （TPD） and poly （vinylcarbazole） （PVK） acted as the hole-transport materials. Tris-（8-hydroxyquinoline）- aluminum （Alq3） was utilized as both the light-emitting layer and the electron transporting layer. The basic structure of the device cell was： indium-tin-oxide （1TO）/PVK ： TPD/Alq3/Mg：Ag. The electroluminescent （EL） characteristics of devices were characterized. The results showed that the peak of EL spectra was located at 530 nm, which conformed to the characterizing spectrum of Alq3. Compared with using vacuum deposition method, the green emission with a maximum luminance up to 26135 cd/m2 could be achieved at a drive voltage of 15 V by selecting proper solvent using spin-coating technique, and its maximum lumi nance efficiency was 2.56 lm/W at a drive voltage of 5.5 V.展开更多
Organic electroluminescent thin film using Znq 2 (Znq 2) as the emitting layer material with structure of glass/ITO/Znq 2/Al (cell)was fabricated. The V I curve, V B curve and electroluminescent spectra of the cell we...Organic electroluminescent thin film using Znq 2 (Znq 2) as the emitting layer material with structure of glass/ITO/Znq 2/Al (cell)was fabricated. The V I curve, V B curve and electroluminescent spectra of the cell were measured. Meanwhile the fluorescent spectra, excited spectra and absorption spectra of Znq 2 with powder and film states were also measured.展开更多
CdSe nanocrystals were prepared by a colloidal chemical approach using CdO and Se powder as precursors in an organic system of TOPO/TOP, and a multilayered electroluminescence device was fabricated with CdSe as emitti...CdSe nanocrystals were prepared by a colloidal chemical approach using CdO and Se powder as precursors in an organic system of TOPO/TOP, and a multilayered electroluminescence device was fabricated with CdSe as emitting layer. The results show that the photoluminescence spectra of the CdSe nanocrystals almost cover the whole visible region and the full width at half maximum （FWHM） is appropriately 200 nm. The electroluminescence spectrum of the multilayered device at different voltages was investigated. The electroluminescence intensity is enhanced with increasing operating voltage, and the CIE coordinates of the device change from （0.3,0.37） at 6 V to （0. 44,0. 46）at 20 V as the operating voltage increases,which indicates that the colors of the device could be tuned by the operatina voltage.展开更多
A new structure containing negative refractive index dielectric layer（NRlDL） is introduced into microcavity. The properties of the new mierocavity organic light-emitting devices（MOLEDs） are investigated. In the ex...A new structure containing negative refractive index dielectric layer（NRlDL） is introduced into microcavity. The properties of the new mierocavity organic light-emitting devices（MOLEDs） are investigated. In the experiment, the transfer matrix method is adopted. The dependence of reflectance and transmittance on the refractive index and thickness of NRIDL are analyzed in detail. Compared with the electroluminescence spectra of non-NRIDL diodes, the line widths of the spectra of the MOLEDs are narrower and all the peaks enhance. The results show that the new structure is beneficial to improve the performance and reduce the thickness of microcavity devices.展开更多
MXenes are emerging two-dimensional(2D)nanomaterials composed of transition metal carbides and/or nitrides and possess unique layered structures with abundant surface functional groups,which enable them with excellent...MXenes are emerging two-dimensional(2D)nanomaterials composed of transition metal carbides and/or nitrides and possess unique layered structures with abundant surface functional groups,which enable them with excellent and tunable properties.MXenes films can be solution-processed in polar solvents and are very suitable for optoelectronic device applications.Especially,Ti_(3)C_(2)T_(x) MXene with the clear advantages of facile synthesis,flexible surface controlling,easily tunable work function,high optical transmittance and excellent conductivity shows great potential for applications in organic/perovskite optoelectronic devices.Therefore,this review briefly introduces the mainstream synthesis methods,optical and electrical properties of MXenes,and comprehensively summarizes the versatile applications of Ti_(3)C_(2)T_(x) MXene in different functional layers(electrode,interface layer and active layer)of organic/perovskite optoelectronic devices including solar cells and light-emitting diodes.Finally,the current application characteristics and the future possibilities of MXenes in organic/perovskite optoelectronic devices are concluded and discussed.展开更多
A high-effective bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). In this paper, Ag-based top-emitting OLEDs are investigated. Ag has the highest reflectivity for vis...A high-effective bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). In this paper, Ag-based top-emitting OLEDs are investigated. Ag has the highest reflectivity for visible light among all metals, yet its hole-injection properties are not ideal for anodes of top-emitting OLED. The performance of the devices is significantly improved using the molybdenum oxide as anode buffer layer at the surface of Ag. By introducing the molybdenum oxide, the hole injection from Ag anodes into top-emitting OLED is largely enhanced with rather high reflectivity retained.展开更多
Two types of organic light-emitting diodes with structures of ITO/N,N'-bis(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB)/tris(8-hydroquinolinato)aluminum(Alq 3)/2,9-dimethyl-4,7-diphenyl-l...Two types of organic light-emitting diodes with structures of ITO/N,N'-bis(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB)/tris(8-hydroquinolinato)aluminum(Alq 3)/2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline(BCP)/Alq 3:4-dicyanomethylene-2-(tert-butyl)-6-methyl-4H-pyran(DCJTB)/Alq 3 /Al and ITO/NPB/BCP/Alq 3 /Alq 3:DCJTB/Alq 3 /Al were studied.NPB was chosen as a hole-transporting/blue-emitting layer.Alq 3 adjacent to BCP acted as a green emitting layer while that adjacent to the Al cathode acted as an electron-transporting layer.Alq 3 doped with 2 wt.% DCJTB was used as a red emitting layer.The operating principles of the devices were explained by the mechanism of F rster energy transfer and the hole and exciton blocking effect of BCP.It was found that the spectral characteristics of the devices strongly depended on the relative location between the green emitting Alq 3 layer and the BCP layer,as well as their thickness.Pure white emission with the CIE coordinates of (0.33,0.33) was achieved by mixing the three primary colors in the device with the structure of ITO/NPB(30 nm)/BCP(6 nm)/Alq 3 (30 nm)/Alq 3:DCJTB(30 nm)/Alq 3 (30 nm)/Al.The BCP layer played an important role in distributing the exciton energy among the three emitting layers to achieve a balanced white light.The white emission of this device was largely insensitive to the driving voltage (15-27 V) with the insertion of the green emitting Alq 3 layer.展开更多
An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The...An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOJCu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m^2, which is almost twice as high as that of the compared device.展开更多
Molybdenum trioxide （MOO3） as a cathode buffer layer is inserted between LiF and A1 to improve the efficiency of white organic light-emitting diodes （OLEDs） in this paper..By changing the MoO3 thickness, a higher ...Molybdenum trioxide （MOO3） as a cathode buffer layer is inserted between LiF and A1 to improve the efficiency of white organic light-emitting diodes （OLEDs） in this paper..By changing the MoO3 thickness, a higher current efficiency of 5.79 cd/A is obtained at a current density of 160 mA/cm2 for the device with a 0.8 nm-thick MoO3 layer as the cathode buffer layer, which is approximately two times greater than that of the device without MoO3. The mechanism for improving the device efficiency is discussed. Moreover, at a voltage of 13 V, the device with a 0.8 nm-thick MoO3 layer achieves a higher luminance of 22370 cd/m2, and the Commission Internationale de I＇Eclairage （CIE） color coordinate of the device with 1 nm-thick MoO3 layer is （0.33, 0：34）, which shows the best color purity. Simple electron-only devices are tested to confirm the impact of the MoO3 layer on the carrier injection.展开更多
文摘A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.
基金This project was sponsored by Ministry level fundingthe Young Excellence Project of UESTC.(Grant No.: UESTC-2006206)
文摘The hole transporting layer （HTL） of organic light-emitting device （OLED） was processed by vacuum deposition and spin coating method, respectively, where N,N＇-biphenyl-N, N＇-bis（3-methylphenyl）- 1, l＇-biphenyl-4,4＇ -diamine （TPD） and poly （vinylcarbazole） （PVK） acted as the hole-transport materials. Tris-（8-hydroxyquinoline）- aluminum （Alq3） was utilized as both the light-emitting layer and the electron transporting layer. The basic structure of the device cell was： indium-tin-oxide （1TO）/PVK ： TPD/Alq3/Mg：Ag. The electroluminescent （EL） characteristics of devices were characterized. The results showed that the peak of EL spectra was located at 530 nm, which conformed to the characterizing spectrum of Alq3. Compared with using vacuum deposition method, the green emission with a maximum luminance up to 26135 cd/m2 could be achieved at a drive voltage of 15 V by selecting proper solvent using spin-coating technique, and its maximum lumi nance efficiency was 2.56 lm/W at a drive voltage of 5.5 V.
文摘Organic electroluminescent thin film using Znq 2 (Znq 2) as the emitting layer material with structure of glass/ITO/Znq 2/Al (cell)was fabricated. The V I curve, V B curve and electroluminescent spectra of the cell were measured. Meanwhile the fluorescent spectra, excited spectra and absorption spectra of Znq 2 with powder and film states were also measured.
基金Supported by the National Natural Science Foundation of China( No.90301004 ,No.10434030 and No.60406005)the"973"National Key Basic Research Special Foundation of China ( No.2003CB314707) the NewStar Programfor Science and Technol-ogy of Beijing City(No.2004B10)
文摘CdSe nanocrystals were prepared by a colloidal chemical approach using CdO and Se powder as precursors in an organic system of TOPO/TOP, and a multilayered electroluminescence device was fabricated with CdSe as emitting layer. The results show that the photoluminescence spectra of the CdSe nanocrystals almost cover the whole visible region and the full width at half maximum （FWHM） is appropriately 200 nm. The electroluminescence spectrum of the multilayered device at different voltages was investigated. The electroluminescence intensity is enhanced with increasing operating voltage, and the CIE coordinates of the device change from （0.3,0.37） at 6 V to （0. 44,0. 46）at 20 V as the operating voltage increases,which indicates that the colors of the device could be tuned by the operatina voltage.
基金Natural Science Research Item of Education Department of Henan Province(2008A430009)Doctor Foundation of Henan Polytechnic University(B2008-22)
文摘A new structure containing negative refractive index dielectric layer（NRlDL） is introduced into microcavity. The properties of the new mierocavity organic light-emitting devices（MOLEDs） are investigated. In the experiment, the transfer matrix method is adopted. The dependence of reflectance and transmittance on the refractive index and thickness of NRIDL are analyzed in detail. Compared with the electroluminescence spectra of non-NRIDL diodes, the line widths of the spectra of the MOLEDs are narrower and all the peaks enhance. The results show that the new structure is beneficial to improve the performance and reduce the thickness of microcavity devices.
基金Projects(52063010,51961010)supported by the National Natural Science Foundation of China。
文摘MXenes are emerging two-dimensional(2D)nanomaterials composed of transition metal carbides and/or nitrides and possess unique layered structures with abundant surface functional groups,which enable them with excellent and tunable properties.MXenes films can be solution-processed in polar solvents and are very suitable for optoelectronic device applications.Especially,Ti_(3)C_(2)T_(x) MXene with the clear advantages of facile synthesis,flexible surface controlling,easily tunable work function,high optical transmittance and excellent conductivity shows great potential for applications in organic/perovskite optoelectronic devices.Therefore,this review briefly introduces the mainstream synthesis methods,optical and electrical properties of MXenes,and comprehensively summarizes the versatile applications of Ti_(3)C_(2)T_(x) MXene in different functional layers(electrode,interface layer and active layer)of organic/perovskite optoelectronic devices including solar cells and light-emitting diodes.Finally,the current application characteristics and the future possibilities of MXenes in organic/perovskite optoelectronic devices are concluded and discussed.
基金supported by the National Natural Science Foundation of China (No.60425101)the Young Excellence Project of University of Electronic Science and Technology of China (No.UESTC-060206)the Fundamental Research Funds for the Central Universities of China (Nos.ZYGX2010Z004 and ZYGX2009J054)
文摘A high-effective bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). In this paper, Ag-based top-emitting OLEDs are investigated. Ag has the highest reflectivity for visible light among all metals, yet its hole-injection properties are not ideal for anodes of top-emitting OLED. The performance of the devices is significantly improved using the molybdenum oxide as anode buffer layer at the surface of Ag. By introducing the molybdenum oxide, the hole injection from Ag anodes into top-emitting OLED is largely enhanced with rather high reflectivity retained.
基金supported by the National Natural Science Foundation of China (Grant Nos.60877005 and 60777025)the Beijing Natural Science Foundation (Grant No.2062019)+4 种基金Beijing NOVA Program (Grant No.2006B20)Program for New Century Excellent Talents in University(Grant No.NCET-08-0717)State Key Project of Basic Research (Grant No.2010CB327704)Key Project of Ministry of Education (Grant No.109009)the 111 Project (Grant No.B08002)
文摘Two types of organic light-emitting diodes with structures of ITO/N,N'-bis(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB)/tris(8-hydroquinolinato)aluminum(Alq 3)/2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline(BCP)/Alq 3:4-dicyanomethylene-2-(tert-butyl)-6-methyl-4H-pyran(DCJTB)/Alq 3 /Al and ITO/NPB/BCP/Alq 3 /Alq 3:DCJTB/Alq 3 /Al were studied.NPB was chosen as a hole-transporting/blue-emitting layer.Alq 3 adjacent to BCP acted as a green emitting layer while that adjacent to the Al cathode acted as an electron-transporting layer.Alq 3 doped with 2 wt.% DCJTB was used as a red emitting layer.The operating principles of the devices were explained by the mechanism of F rster energy transfer and the hole and exciton blocking effect of BCP.It was found that the spectral characteristics of the devices strongly depended on the relative location between the green emitting Alq 3 layer and the BCP layer,as well as their thickness.Pure white emission with the CIE coordinates of (0.33,0.33) was achieved by mixing the three primary colors in the device with the structure of ITO/NPB(30 nm)/BCP(6 nm)/Alq 3 (30 nm)/Alq 3:DCJTB(30 nm)/Alq 3 (30 nm)/Al.The BCP layer played an important role in distributing the exciton energy among the three emitting layers to achieve a balanced white light.The white emission of this device was largely insensitive to the driving voltage (15-27 V) with the insertion of the green emitting Alq 3 layer.
基金supported by the National Natural Science Foundation of China(No.61274063)
文摘An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOJCu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m^2, which is almost twice as high as that of the compared device.
基金supported by the National Natural Science Foundation of China(No.61076066)the Doctor Foundation of Shaanxi University of Scienceand Technology(No.BJ09-07)
文摘Molybdenum trioxide （MOO3） as a cathode buffer layer is inserted between LiF and A1 to improve the efficiency of white organic light-emitting diodes （OLEDs） in this paper..By changing the MoO3 thickness, a higher current efficiency of 5.79 cd/A is obtained at a current density of 160 mA/cm2 for the device with a 0.8 nm-thick MoO3 layer as the cathode buffer layer, which is approximately two times greater than that of the device without MoO3. The mechanism for improving the device efficiency is discussed. Moreover, at a voltage of 13 V, the device with a 0.8 nm-thick MoO3 layer achieves a higher luminance of 22370 cd/m2, and the Commission Internationale de I＇Eclairage （CIE） color coordinate of the device with 1 nm-thick MoO3 layer is （0.33, 0：34）, which shows the best color purity. Simple electron-only devices are tested to confirm the impact of the MoO3 layer on the carrier injection.
