溶液相大尺寸有机薄晶体的生长及其场效应晶体管研究

利用改进的两溶剂混合法生长出大尺寸6，13一双（三异丙基甲硅烷基乙炔基）并五苯（TIPS-PEN）薄晶体。晶体尺寸可达几毫米，厚度范围为90～700nm。用偏光显微镜确定了其单结晶性。通过对比实验发现，随着溶液浓度的升高，有机薄晶体尺寸增大，厚度增加。用X射线衍射和选区电子衍射对TIPS-PEN薄晶体进行表征，结果显示薄晶体具有非常高的有序结构。基于薄晶体的场效应晶体管（FET）具有高的空穴迁移率，达0．39cm2／v·S，较旋涂制备的薄膜晶体管高两个量级，并且随着薄晶体厚度的降低载流子迁移率增加。

OTFT with Bilayer Gate Insulator and Modificative Electrode

An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.

Preparation and operation characteristics of organic semiconductor transistor using thin film Al gate and copper phthalocyanine

The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The experiment reveals that OSITs have obtained a low driving voltage, high current density and high switch speed such as I_ DS = 1.2×10 -6 A/mm2, and the degree of 1 000 Hz. The OSITs have excellent operation characteristics of typical static induction transistors.

Mixed P3HT/PCBM Organic Thin-Film Transistors： Relation between Morphology and Electrical Characteristics

The mixed P3HT （poly（3-hexylthiophene）） and [6,6]-PCBM （phenyl C61-butyric acid methyl ester） organic thin films were investigated for electronic structure using UV-Vis spectrophotometer and PESA （photo-electron spectroscopy in air）. Furthermore, ESR （electron spin resonance） and AFM （atomic force microscopy） were used to investigate the surface morphology and molecular orientation, respectively. ESR analysis indicated the molecular orientation of the P3HT crystalline in the blend thin films, which the crystalline oriented normal to the substrate with distribution of 35°. AFM images indicated that the surface morphology of P3HT film was affected by the presence of PCBM nanoparticles. Solution-processed OTFTs （organic thin-film transistors） based on P3HT/PCBM blend thin film in a top source-drain contact structure was fabricated, and the electrical characteristics of the devices were also investigated. A unipolar property with p-channel characteristics were obtained in glove box measurement.

A Hybrid Dielectric Ink Consisting of up to 50 wt% of TiO2 Nanoparticles in Polyvinyl Alcohol （PVA）

PVA （Polyvinyl Alcohol） is a water soluble organic dielectric, easily solution processed to fabricate films by spin coating, dip coating or inkjet printing. It has been used as a dielectric layer in OTFTs （organic thin film transistors）, and its dielectric constant is around 3.5-10. For OTFTs operating at lower voltage, it is desirable to increase the dielectric constant. Here, we report a technique to incorporate upto 50 wt% of TiO2 nanoparticles （15-25 nm） in PVA to increase its dielectric constant. Rutile phase of TiO2 is used, because of its higher dielectric constant （e = 114） compared to anatase phase （E = 31）. We have made inks containing 10 and 50 wt% （of PVA） TiO2 nanoparticles, which is stable upto six months. PVA-TiO2 dispersions and PVA （without TiO2） were spin coated on indium tin oxide coated polyethylene terephthalate substrate. Film structure was studied using SEM （scanning electron microscopy）. Absorption study of the films confirms presence of TiO2 nanoparticles. M-I-M capacitors were fabricated by thermally evaporating aluminium on top of the dielectric films. We observed enhancement in dielectric constant by a factor of 2 for PVA containing 50 wt% TiO2 in comparison to PVA＇s dielectric constant. There is no concomitant increase in the leakage current.

Studying the operation characteristics and structure of vertical channel copper-phthalocyanine organic semiconductor transistor

The creation of Au/CuPe/Al/CuPc/strueture is a perpendicular type electricity found in the channel of organic static induction transistor. In the following we analyze transistor operation characteristics and machine structural relation. The results express that the transistor drives the voltage low and has no-saturation currentvoltage characteristics. Its operation characteristics are dependant on gate bias voltage and the construction of the aluminum eleetrode. The vertical ehannel of organic static induction transistor （OSIT） , with structure of Au/CuPc/Al/CuPc/ Cu, has been determined. According to the test results, the relation of its operation characteristics aud device structure was analyzed. The results show that this transistor has a low driving voltage and unsaturation Ⅰ-Ⅴ characteristies. Its operation characteristics are dependant on gate bias voltage and the structure of the aluminum electrode.

Top Contact Pentacene Organic Thin Film Field Effect Transistors

Using pentacene as an active material, the organic thin film transistors were fabricated on Si3N4/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly doped Si as the gate electrode and substrate with plasma-enhanced chemical vapor deposited （PECVD） silicon nitride as gate dielectric. Pentacene thin films were deposited by thermal evaporation on dielectrics as the active layer, then RF-magnetron sputtered amorphous aluminium was used as the source and drain contacts. Measurement results show that field effect mobility and threshold voltage are 0.043 cm2/（V·s） and 12.6 V, respectively, and on-off current ratio is nearly 1×103.

Progress in flexible organic thin-film transistors and integrated circuits

Organic thin-film transistor constructs the headstone of flexible electronic world such as conformable sensor arrays and flexible active-matrix displays. With solutionprocessed methods, it forges ahead toward large-area, lowcost manufacturing goals. As an indispensable complement to traditional silicon-based transistors, organic thin-film field-effect transistors have made great progress in materials,performance, bending capacity, and integrated circuits in recent few years. Flexible transistors and circuitry have extremely promising application prospects and possess irreplaceable status in foldable displays, artificial skins and bendable smart cards. In this review, we will discuss the evolution of flexible organic transistors and integrated circuits in terms of material, fabrication as well as application.

The fabrication and optimization of OTFT formaldehyde sensors based on Poly(3-hexythiophene)/ZnO composite films

Formaldehyde(HCHO),a colorless and pungent-smelling gas,is confirmed be a huge threat to human health.The detection of formaldehyde is necessary and important.The Poly(3-hexythiophene)(P3HT)/ZnO organic-inorganic composite thin film was fabricated and used as the sensitive layer of organic thin film transistors(OTFT) by spray-deposited method to detect HCHO at room temperature.The process parameters such as P3HT/ZnO weight ratios and airbrushed masses were optimized.The results showed that P3HT/ZnO OTFT exhibited good sensing response to HCHO.Airbrushed mass of 1ml was the optimal mass,and the 1:1 and 1:5 weight ratios of P3HT/ZnO exhibited better sensing properties compared with others.OTFT gas sensors based on P3HT/ZnO composite film provides a novel promising approach to the detection of HCHO.

The effect of air exposure on device performance of flexible C8-BTBT organic thin-film transistors with hygroscopic insulators

Organic thin film transistors(OTFTs)are normally sensitive to ambient conditions and show performance degradation in air.On the contrary,the performance of flexible 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)OTFTs using cross-linked polymer layer,poly(4-vinyl-phenol)-4,4’-(hexafluoroisopropylidene)diphthalic anhydride(PVP-HDA),as the dielectric layer can be improved in air conditions with 40%relative humidity.Under soaking in air with 40%relative humidity,the electrical behavior,surface morphology,and contact angle of the flexible C8-BTBT OTFTs using PVP-HAD as dielectric layer with three different thicknesses were investigated.It is found that,when the devices with 375 nm-thick PVP-HDA films are placed in 40%relative humidity air conditions for 6 h,the corrected average mobility(μ)can increase from 3.2 to 5.1 cm^2 V^-1 s^-1.Furthermore,the average threshold voltage(Vth)changes from-12.4 to-9.3 V while keeping a constant ratio of I on/Ioff=10^4.These results indicate that the flexible C8-BTBT OTFTs with PVP-HDA dielectric layer exhibit interesting application prospects.

An isoindigo-bithiazole-based acceptor-acceptor copolymer for balanced ambipolar organic thin-film transistors

Balanced carrier transport is observed in acceptor-acceptor （A-A＇） type polymer for ambipolar organic thin-film transistors （OTFTs）. It is found that the incorporation of two electron-accepting moieties （BTz and IIG） into a polymer main chain to form A-A＇ polymer PIIG-BTz could lower highest occupied molecular orbital （HOMO） and lowest unoccupied molecular orbital （LUMO） levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor （A-A＇） structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.

Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon di- oxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain electrodes and the pentacene active layer. The threshold voltage decreased remarkably from ca. -20 V to a few volts （below -7.6 V） while the mobility in- creased 1.5-3 times after the insertion of the interlayer of only ca. 2 nm, which could be attributed to the reduction of the car- tier injection barrier. The results suggest a simple and effective way to achieve low-threshold-voltage pentacene-based organic thin film transistors with high mobility on silicon dioxide dielectric.

Enhanced Electrical Properties in Carbon Nanotube/Poly （3-hexylthiophene） Nanocomposites Formed Through Non-Covalent Functionalization

Poly（3-hexylthiophene） （P3HT） has received much attention as a good candidate to replace inorganic semiconductors for flexible electronics due to its solution-processability. However, the low charge mobility of P3HT is an obstacle to its commercialization. To overcome this problem, we propose a new non-covalent functionalization method for carbon nanotubes （CNTs） for use in CNT/P3HT nanocomposites. By using modified pyrene molecules with hydrophobic long alkyl chains, the non-covalently functionalized CNTs can become well dispersed in hydrophobic solutions and organic semiconductor matrices. Fabrication of organic thin-film transistors （OTFTs） from the non-covalently functionalized CNT/organic semiconductor nanocomposites shows that our non-covalent functionalization method significantly reduces damage to CNTs during functionalization when compared with covalent functionalization by treatment with acids. The OTFTs show 15 times enhancement of field effect mobility （1.5 × 10^-2 cm^2/（V.s）） compared to the mobility of OTFTs made from pure P3HT. This enhancement is achieved by addition of only 0.25 wt% of CNTs to P3HT.

Dithienocarbazole- and benzothiadiazole-based donor-acceptor conjugated polymers for bulk heterojunction polymer solar cells

Donor-acceptor （D-A）-conjugated polymers P（BT-C1） and P（BT-C2）, with dithieno[2,3-b;7,6-b]carbazole （C1） or dithi- eno[3,2-b;6,7-b]carbazole （C2） as D-unit and benzothiadiazole （BT） as A-unit, were synthesized. The optical bandgaps of the polymers are similar （1.84 and 1.88 eV, respectively）. The structures of donor units noticeably influence the energy levels and backbone curvature of the polymers. P（BT-C1） shows a large backbone curvature; its highest occupied molecular orbital （HOMO） energy level is -5.18 eV, whereas P（BT-C2） displays a pseudo-straight backbone and has a HOMO energy level of -5.37 eV. The hole mobilities of the polymers without thermal annealing are 1.9×10^-3 and 2.7×10^-3 cm^2 V-1 s^-1 for P（BT-C1） and P（BT-C2）, respectively, as measured by organic thin-film transistors （OTFTs）. Polymer solar cells using P（BT-C1） and P（BT-C2） as the donor and phenyl-Cyl-butyric acid methyl ester （PCyLBM） as the acceptor were fabricated. Power conversion efficiencies （PCEs） of 4.9% and 5.0% were achieved for P（BT-C1） and P（BT-C2）, respectively. The devices based on P（BT-C2） exhibited a higher Voc due to the deeper HOMO level of the polymer, which led to a slightly higher PCE.

The mobility improvement of organic thin film transistors by introducing Zn O-nanrods as an zctive layer

Organic thin film transistors(OTFTs) based on poly(3-hexylthiophene)(P3HT)/Zinc oxide(ZnO) nanorods composite films as the active layers were prepared by spray-coating process. The OTFTs with P3HT/ZnO-nanorods composite films owned higher carriers mobility than the OTFT based on pure P3 HT. It can be found that the mobility of OTFTs increased by 135% due to ZnO-nanorods doping. This was attributed to the improvement of the P3 HT crystallinity and the optimization of polymer chains orientation. Meanwhile, because of the distinction of work function between P3 HT and ZnO, the majority carriers would accumulate on either side of the P3HT-ZnO interface which benefited carrier transfer. The influence on the mobility of composite film was studied. In addition, the threshold voltage of devices changed positively with the increase of ZnO-nanorods due to the decrease of electrostatic potential for P3HT/ZnO-nanorods composite films. The effect could be explained by the energy level theory of semiconductor.

The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property

In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were used as the active layer,andα-6T single layer sensitive film was also prepared for comparison purpose.The electrical and trace NO2-sening properties of these two OTFT gas sensors were tested and analyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer had obviously better electrical properties,better stabilities and higher NO2-sening response values than the device withα-6T single layer,in which both the carrier mobility(μ)and on/off current ratio enhanced two order of magnitude.The improved performance of bilayer OTFT can be explained that MWCNTs acted as highly conducting bridges connecting the crystalline terraces in theα-6T film.Threshold voltage(VT),carrier mobility,on/off current ratio and grid current which showed extremely similar variation trend as source-drain current,were optional parameters to reveal the gas-sensing characteristic of OTFT gas sensors.Morphology analysis showed that the special feature of MWCNTs had certain influence on the gas-sensing properties.

A structurally ordered thiophene-thiazole copolymer for organic thin-film transistors

This paper reports a new donor-acceptor copolymer semiconductor, PTBTh, comprising bithiophene and bithiazole where the regular coplanar structure and the intramolecular charge transfer are expected to increase the opportunity for --- stacking and charge transport. The AFM image shows lamellar stacking of the polymer on the surface. The field-effect transistor (FET) properties of PTBTh have been evaluated by a bottom-contact/bottom-gate TFT configuration. The device showed a high hole mobility of 1.14×10-2 cm2 V-1 s-1 and a current on/off ratio of 3×105 with the polymer thin film annealed at a mild temperature of 120 ℃ when measured under ambient conditions.

A new pseudo rubrene analogue with excellent film forming ability

A novel pseudo rubrene analogue,6,11-di(thiophen-2-yl)-tetracene-5,12-dione (DTTDO) was synthesized,in which two thienyl groups and two carbonyl groups replacing four phenyl groups in the rubrene molecule were connected to the backbone of tetracene.This compound was characterized by single crystal X-ray structure analysis,thermogravimetric analysis,absorption spectra and electrochemical measurements.Unlike rubrene,DTTDO exhibited excellent film forming ability by normal vacuum deposition,indicating its promising applications in organic thin film transistors.