Mn、N共掺杂高活性ORR催化剂的合成

金属、氮共掺杂碳材料类催化剂(Metal-N-C,Metal=Fe、Mn、Co等)具有良好的氧还原(ORR)催化性能,成为近年应用于燃料电池正极的非铂类催化剂的研究热点.普遍上,Fe-N-C类催化剂具有最高的ORR催化性能,但其促进的Fenton反应(Fe2++H2O2,ORR双电子过程的副产物)会导致PEMFC结构损坏.因此,使用酞菁锰(MnPc)为前驱体,通过有机金属气相沉积工艺,合成了一种以单层石墨烯为基体的Mn-N-C类催化剂(Mn-N-C/G-30).通过热重分析可知,MnPc分子在480℃下脱H形成悬空键而产生的分子间键合作用使其生长为Mn-N-C/G-30催化剂.通过SEM、TEM、XRD的形貌表征,表明合成Mn-N-C/G-30催化剂结构与前驱体酞菁锰完全不同,是一种新型叶片状纳米材料,且具单晶结构,其晶格间距为0.315 nm.通过Raman和XPS的结构表征,证明合成Mn-N-C/G-30催化剂结构中形成了不同于MnPc中Mn-N4配位结构的Mn-N活性位点.采用了三电极体系进行电化学测试.线性伏安扫描测试结果表明,合成Mn-N-C/G-30催化剂在25℃、0.1 mol/L的KOH水溶液中的ORR起始电位和在电位0.88 V条件下的电流密度分别为0.97 V和1.4 mA/cm^(2),优于MnPc(0.85 V和0.1 mA/cm^(2))和商业化Pt/C催化剂(0.94 V和1.3 mA/cm^(2))的性能(以上电位均相对于氢标电位).K-L图的计算结果表明,合成Mn-N-C/G-30催化剂上的ORR过程为高效的四电子转移步骤.

Investigation of GaN Growth Directly on Si (001) by ECR Plasma Enhanced MOCVD

Direct growth of GaN films on Si(001) substrate at low temperatures (620～720℃) by electron cyclotron resonance (ECR) microwave plasma enhanced metalorganic chemical vapor deposition (PEMOCVD).The crystalline phase structures of the films are investigated.The results of high resolution transmission electron microscopy (HRTEM) and X ray diffraction (XRD) indicate that high c axis oriented crystalline wurtzite GaN is grown on Si(001) but there is an amorphous layer formed naturally at GaN/Si interface.Both faces of the amorphous layer are flat and sharp,and the thickness of the layer is 2nm approximately cross the interface.The analysis supports that β GaN phase is not formed owing to the N x Si y amorphous layer induced by the reaction between N and Si during the initial nucleation stage.The results of XRD and atomic force microscopy (AFM) indicate that the conditions of substrate surface cleaned in situ by hydrogen plasma,GaN initial nucleation and subsequent growth are very important for the crystalline quality of GaN films.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates.In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures.Moreover,{111} φ scans with χ at 55° reveal the abnormal distribution of Bragg diffractions.The extra intensity maxima in the pole figures shows that the process of twinning plays a dominating role during the growth process.It is suggested that the polarity of {111} facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates.It is proposed that twinning is prone to occurring on {111}B,N-terminated facets.

Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor

GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor.High resolution X ray diffraction (HRXRD) and secondary ion mass spectro metry (SIMS) are combined in determining the nitrogen contents in the samples.Room temperature photoluminescence (RTPL) measurement is also used in characterizing.The influence of different Ga precursors on GaNAs quality is investigated.Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa).Nitrogen content of 5 688% is achieved with TEGa.The peak wavelength in RTPL measurement is measured to be 1278 5nm.

Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD

High quality ZnO films are successfully grown on Si（100） substrates by metal-organic chemical vapor deposition at 300℃. The effects of the thickness of the ZnO films on crystal structure, surface morphology,and optical properties are investigated using X-ray diffraction, scanning probe microscopy,and photoluminescence spectra, respectively. It is shown that the ZnO films grown on Si substrates have a highly-preferential C-axis orientation,but it is difficult to obtain the better structural and optical properties of the ZnO films with the increasing of thickness. It is maybe due to that the grain size and the growth model are changed in the growth process.

Chemical Vapor Deposition Mechanism of Copper Films on Silicon Substrates

A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.

Analysis and design of resistance-wire heater in MOCVD reactor

Metal organic chemical vapor deposition(MOCVD) is a key equipment in the manufacturing of semiconductor optoelectronic devices and microwave devices in industry. Heating system is a vital part of MOCVD. Specific heating device and thermal control technology are needed for each new reactor design. By using resistance-wire heating MOCVD reaction chamber model, thermal analysis and structure optimization of the reactor were developed from the vertical position and the distance between coils of the resistance-wire heater. It is indicated that, within a certain range, the average temperature of the graphite susceptor varies linearly with the vertical distance of heater to susceptor, and with the changed distances between the coils; furthermore, single resistance-wire heater should be placed loosely in the internal and tightly in the external. The modulate accuracy of the temperature field approximately equals the change of the average temperature corresponding to the change of the coil position.

Blue LED growth from 2 inch to 8 inch

Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper wafer pocket design,good wavelength and thickness uniformity can be obtained for all wafer sizes.

Accurate characterization of room-temperature long range magnetic order in GaN: Mn by magnetic force microscope

Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer,strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement,which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.

Carrier dynamics and doping profiles in GaAs nanosheets

We have recently demonstrated that GaAs nanosheets can be grown by metal-organic chemical vapor deposition （MOCVD）. Here, we investigate these nanosheets by secondary electron scanning electron microscopy （SE-SEM） and electron beam induced current （EBIC） imaging. An abrupt boundary is observed between an initial growth region and an overgrowth region in the nanosheets. The SE-SEM contrast between these two regions is attributed to the inversion of doping at the boundary. EBIC mapping reveals a p-n junction formed along the boundary between these two regions. Rectifying I-V behavior is observed across the boundary further indicating the formation of a p-n junction. The electron concentration （ND） of the initial growth region is around 1 × 10^18 cm^-3, as determined by both Hall effect measurements and low temperature photoluminescence （PL） spectroscopy. Based on the EBIC data, the minority carrier diffusion length of the nanosheets is 177 nm, which is substantially longer than the corresponding length in unpassivated GaAs nanowires measured previously.

Fabrication of 0.3-m T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

We present an InGaAs metamorphic high electron mobility transistor （mHEMT） grown using Metalorganic Chemical Vapor Deposition （MOCVD） on an n-type silicon substrate with the introduction of an effective multi-stage buffering scheme. Fabrication and performance of a high-frequency 0.3μm gate-length depletion-mode A10.s0In0.s0As/Ga0.47In0.53As mHEMT is re- ported for the first time. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. The non-alloyed ohmic contact resistance Rc was as low as 0.065 Ω-mm. A maximum transconductance up to 761 mS/ram was measured. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） were 72.8 and 74.5 GHz, respectively. This device has the highest fw yet reported for a 0.3-μm gate-length Si-based mHEMT grown using MOCVD. A high voltage gain, gm/gds, of 40.6 is observed in the device.

MOCVD derived double-sided YBa_2Cu_3O_(7-δ) films on Y_2O_3 /YSZ/CeO_2 buffered textured metal substrates

We have successfully employed metal-organic chemical vapor deposition （MOCVD） technique to simultaneously deposit double-sided YBa2Cu3O7-δ （YBCO） films on both sides of YzO3/yttria-stabilized zirconia （YSZ）/CeO2 （YYC） buffered biaxially textured Ni-5 at.% W substrates, which is of great prospect to cut the production cost of YBCO coated conductors. X-ray diffraction analysis revealed that both sides of YBCO film were purely c-axis oriented and highly textured. The co-scan of （005） YBCO and Ф-scan of （103） YBCO yielded full width at half maximum （FWHM） values of 4.9° and 6.6° for one side of double-sided YBCO film, respectively, as well as 4.4° and 6.4° for the other side. The current transportation measurements performed on such double-sided 500 nm-thickness YBCO films showed the self-field critical current density （Jc） at 77 K of 0.6 MA/cm^2 and 1.2 MA/cm^2, respectively. Further research is in the process of exploring new solution to improve the Jc in practice.

Influence of annealing on the structural,optical and electrical properties of indium oxide films deposited on c-sapphire substrate

Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.

The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD

Nonpolar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire by metal-organic chemical vapor deposition （MOCVD） under different growth pressures. The as-grown films are investigated by optical microscopy, high-resolution X-ray diffraction （HRXRD） and Raman scattering. As growth pressure rises from 100 mbar to 400 mbar, the surface gets rougher, and the in-plane XRD full width at half maximum （FWHM） along the c-axis [0001] increases while that along the m-axis [1100] decreases. Meanwhile, residential stresses are reduced along both the c-axis and the m-axis. The structural anisotropy feature under 400 mbar is inverted with respect to 100 mbar, and the weakened anisotropy is achieved under a moderate pressure of 200 mbar, probably due to the suppressed Ga atomic migration along the c-axis under a larger pressure. We propose that pressure can affect a-plane growth through the V/III ratio.