随着运动体捕捉对嵌入式系统要求的提高,传统方法对分辨率、采集速度难以兼顾.把运动物捕捉分成对分辨率和速度侧重不同的运动检测和目标提取两个部分,利用有源像素结构APS-CMOS图像传感器可随机接入图像缓存的硬件特性,在数字信号处理(...随着运动体捕捉对嵌入式系统要求的提高,传统方法对分辨率、采集速度难以兼顾.把运动物捕捉分成对分辨率和速度侧重不同的运动检测和目标提取两个部分,利用有源像素结构APS-CMOS图像传感器可随机接入图像缓存的硬件特性,在数字信号处理(digital signal processing,DSP)平台上实现两个阶段特点各异的工作模式切换.这样就使得整个系统的采集速度和目标分辨率同时得到兼顾.而且,此方法使用一般器件就可实现传统方法需要高性能器件才能达到的技术指标.展开更多
TP212 99031811半导体光电传感技术在体无创监测简介=Semiconductorphotoelectric sensing technology to nondestructivemeasurement of human body[刊,中]/常昌远,于为顺,骆璇,魏同立(东南大学电子工程系.江苏,南京(210096))//传感技...TP212 99031811半导体光电传感技术在体无创监测简介=Semiconductorphotoelectric sensing technology to nondestructivemeasurement of human body[刊,中]/常昌远,于为顺,骆璇,魏同立(东南大学电子工程系.江苏,南京(210096))//传感技术学报.—1998,11(1).-69-74重点介绍几种重要生理指标在体监测的最新研究进展,分析其工作机理。展开更多
TP212.14 2003064304CMOS有源像素图像传感器的噪声控制技术=Noise reductiontechnology for active-pixel image sensors[刊,中]/裴志军(天津大学电子信息工程学院.天津(300072)),国澄明…∥半导体光电.-2002,23(6).-382-385分析了CMO...TP212.14 2003064304CMOS有源像素图像传感器的噪声控制技术=Noise reductiontechnology for active-pixel image sensors[刊,中]/裴志军(天津大学电子信息工程学院.天津(300072)),国澄明…∥半导体光电.-2002,23(6).-382-385分析了CMOS有源像素图像传感器(APS)的噪声种类及各自产生的原因,介绍了对应不同噪声的控制技术。图3参6(严寒)TP212.14 2003064305广义位移传感器在形状误差和误差运动分离中的读数贡献=Reading contributions of generalized displacement sensorsthe separation of form error and error motions[刊,展开更多
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and succ...A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.展开更多
A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 4...A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.展开更多
文摘随着运动体捕捉对嵌入式系统要求的提高,传统方法对分辨率、采集速度难以兼顾.把运动物捕捉分成对分辨率和速度侧重不同的运动检测和目标提取两个部分,利用有源像素结构APS-CMOS图像传感器可随机接入图像缓存的硬件特性,在数字信号处理(digital signal processing,DSP)平台上实现两个阶段特点各异的工作模式切换.这样就使得整个系统的采集速度和目标分辨率同时得到兼顾.而且,此方法使用一般器件就可实现传统方法需要高性能器件才能达到的技术指标.
文摘TP212 99031811半导体光电传感技术在体无创监测简介=Semiconductorphotoelectric sensing technology to nondestructivemeasurement of human body[刊,中]/常昌远,于为顺,骆璇,魏同立(东南大学电子工程系.江苏,南京(210096))//传感技术学报.—1998,11(1).-69-74重点介绍几种重要生理指标在体监测的最新研究进展,分析其工作机理。
文摘TP212.14 2003064304CMOS有源像素图像传感器的噪声控制技术=Noise reductiontechnology for active-pixel image sensors[刊,中]/裴志军(天津大学电子信息工程学院.天津(300072)),国澄明…∥半导体光电.-2002,23(6).-382-385分析了CMOS有源像素图像传感器(APS)的噪声种类及各自产生的原因,介绍了对应不同噪声的控制技术。图3参6(严寒)TP212.14 2003064305广义位移传感器在形状误差和误差运动分离中的读数贡献=Reading contributions of generalized displacement sensorsthe separation of form error and error motions[刊,
文摘A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.
文摘A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.
