系统提出了He Ar Xe核泵浦激光本征效率的理论模型,建立了本征效率与泵浦腔内介质温度(能量沉积)、气体总压力、He和Ar分压、Xe的含量之间的函数关系,完善了核泵浦激光腔内能量沉积模拟计算软件。研究表明:腔内气体组成决定激光效率,中...系统提出了He Ar Xe核泵浦激光本征效率的理论模型,建立了本征效率与泵浦腔内介质温度(能量沉积)、气体总压力、He和Ar分压、Xe的含量之间的函数关系,完善了核泵浦激光腔内能量沉积模拟计算软件。研究表明:腔内气体组成决定激光效率,中子屏蔽效应对腔内能量沉积影响严重,只有当腔厚度与气体压力为一定关系时,能量沉积达最大。这为进一步的实验设计提供了理论依据。展开更多
Methods for improving the high current performance of static induction transistor （SIT） are presented.Many important factors,such as ＂trans-conductance per unit channel width＂ θ, ＂gate efficiency＂ η, ＂sensiti...Methods for improving the high current performance of static induction transistor （SIT） are presented.Many important factors,such as ＂trans-conductance per unit channel width＂ θ, ＂gate efficiency＂ η, ＂sensitivity factor＂ D,and ＂intrinsic static gain＂ μ0,that may be used to describe different aspects of the electrical performance of an SIT are first defined.The dependences of electrical parameters on the structure and technological process of an SIT are revealed for the first time.The packaging technologies are so important for the improvement of high power performance of SITs that they must be paid attention.Testing techniques and circuits for measuring frequency and power parameters of SITs are designed and constructed.The influence of packaging processes in technological practice on the electrical performance of SITs is also discussed in depth.展开更多
Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the co...Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the conventional field-effect transistor （FET） method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.展开更多
文摘系统提出了He Ar Xe核泵浦激光本征效率的理论模型,建立了本征效率与泵浦腔内介质温度(能量沉积)、气体总压力、He和Ar分压、Xe的含量之间的函数关系,完善了核泵浦激光腔内能量沉积模拟计算软件。研究表明:腔内气体组成决定激光效率,中子屏蔽效应对腔内能量沉积影响严重,只有当腔厚度与气体压力为一定关系时,能量沉积达最大。这为进一步的实验设计提供了理论依据。
文摘Methods for improving the high current performance of static induction transistor （SIT） are presented.Many important factors,such as ＂trans-conductance per unit channel width＂ θ, ＂gate efficiency＂ η, ＂sensitivity factor＂ D,and ＂intrinsic static gain＂ μ0,that may be used to describe different aspects of the electrical performance of an SIT are first defined.The dependences of electrical parameters on the structure and technological process of an SIT are revealed for the first time.The packaging technologies are so important for the improvement of high power performance of SITs that they must be paid attention.Testing techniques and circuits for measuring frequency and power parameters of SITs are designed and constructed.The influence of packaging processes in technological practice on the electrical performance of SITs is also discussed in depth.
文摘Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the conventional field-effect transistor （FET） method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.
